WiMAX Brochure for Cree GaN HEMTs, CGH35015, CGH35015F ...
Gallium Nitride (GaN) HEMT Transistors for BTS Applications Cree’s
Doherty
CDPA21480, performance. CGH21240F
demonstration
provides
amplifier
innovative
The
amplifier
devices
with
uses
digital
two
CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR
UMTS of
-10 2.11 GHz Pre DPD
the
-20
pre-distortion
-30
2.11 GHz Post DPD 2.14 GHz Pre DPD 2.14 GHz Post DPD 2.17 GHz Pre DPD
> 50 % under W-CDMA
Power (dBm)
2.17 GHz Post DPD
correctability greater than 20 dB, providing efficiency
and average power of 80 W.
-40
-50
-60
-70
-80 -30
-20
-10
0
10
20
30
Frequency from Carrier Center (MHz)
• 900MHz, 2.5GHz, 3.5GHz, and 5.5GHz BWA and W-CDMA Transistors • High Efficiencies for the Complete Product Family • Extensive Characterization under W-CDMA and OFDM Signal Personalities • Highly Correctable under Digital Predistortion • Reference Design under Class A/B and Doherty
Cree’s GaN HEMTs are ideal for high efficiency, high frequency, broadband, deployment being driven by high data-rate, multi-carrier networks. GaN HEMT transistors are well suited for tower mounted high power amplifier (HPA) applications, where small size and low weight
Ma y2 00 9, R ev. 4.2
is a crucial focus.
1
Cree, Inc. 3026 East Cornwallis Road Research Triangle Park, NC 27709 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/wireless
GaN HEMT BTS Product Family1 Part Number
Frequency Band
Operating Voltage
Psat
Modulated Gain
ACLR
Pulsed Drain Efficiency
Package
CGH09120F
750 to 950 MHz
28 V
120 W
21 dB
-38 dB
75 %
440095
Part Number
Frequency Band
Operating Voltage
Psat
Modulated Gain
ACLR
Pulsed Drain Efficiency
Package
CGH21120F
1.8 to 2.3 GHz
28 V
110 W
15 dB
-35 dB
70 %
440162
CGH25120F
2.3 to 2.7 GHz
28 V
130 W
12.5 dB
-31 dB
60 %
440162
CGH21240F
1.8 to 2.3 GHz
28 V
215 W
15 dB
-35 dB
65 %
440117
Part Number
Frequency Band
Operating Voltage
Pave
Gain
802.162004 RCE2
Drain Efficiency
Package
CGH27015F
2.3 to 2.9 GHz
28 V
2W
15 dB
-34 dB
24 %
440166
CGH27015P
2.3 to 2.9 GHz
28 V
2W
15 dB
-34 dB
24 %
440196
CGH27030F
2.3 to 2.9 GHz
28 V
4W
15 dB
-34 dB
28 %
440166
CGH27060F
2.3 to 2.9 GHz
28 V
8W
14 dB
-34 dB
27 %
440193
Part Number
Frequency Band
Operating Voltage
Pave
Gain
802.162004 RCE2
Drain Efficiency
Package
CGH35015F
3.3 to 3.9 GHz
28 V
2W
12 dB
-34 dB
26 %
440166
CGH35015P
3.3 to 3.9 GHz
28 V
2W
12 dB
-34 dB
26 %
440196
CGH35030F
3.3 to 3.9 GHz
28 V
4W
12 dB
-34 dB
25 %
440166
CGH35060F
3.3 to 3.9 GHz
28 V
8W
12 dB
-34 dB
25 %
440193
Part Number
Frequency Band
Operating Voltage
Pave
Gain
802.162004 RCE2
Drain Efficiency
Package
CGH55015F
5.5 to 5.8 GHz
28 V
2W
11 dB
-34 dB
25 %
440166
CGH55030F
5.5 to 5.8 GHz
28 V
4W
10 dB
-34 dB
25 %
440166
Note1: All data is typical and was measured in amplifiers with at least 400MHz of power bandwidth. Note2: -34dB RCE is equivalent to 2% rms EVM.
Package Types 440117, 440162, 440193, 440095, 440166, 440196
Type: 4401 17 Size: 0.38” x 1.34”
Type: 4401 62 Size: 0.38” x 0.80”
Type: 4401 93 Size: 0.23” x 0.80”
Copyright © 2007-9 Cree, Inc. All rights reserved. Permission is given to reproduce this document provided the entire document (including this copyright notice) is duplicated. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
Type: 4400 95 Size: 0.23” x 0.80”
Type: 4401 66 Size: 0.16” x 0.55”
Type: 4401 96 Size 0.16” x 0.20”
Cree, Inc. 3026 East Cornwallis Road Research Triangle Park, North Carolina 27709 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.313.2733 www.cree.com/wireless
Typical Performance for BWA and W-CDMA Applications Gain, EVM1 and Efficiency of CGH55015F vs. Output Power in a Broadband Amplifier Circuit VDD = 28 IDQ = 75 mAOutput Power CGH55015F - Gain, EVM,V, & Efficiency versus
14
35 EVM 5.8GHz
Gain 5.5GHz
Gain 5.65GHz
Gain 5.8GHz
Efficiency 5.5GHz
Efficiency 5.65GHz
Efficiency 5.8GHz
30
10
25
8
20
6
15
4
10
2
5
0
0 15
20
25
30
35
Output Power (dBm)
40
WCDMA Characteristics with and without DPD Correction, ACLR, and Drain Efficiency vs Output Power of the CGH09120F measured in CGH09120F-TB Amplifier Circuit. Two Channel WCDMA 7.5dB PAR with CFR -20
50
-25
Uncorrected -ACLR
Uncorrected +ACLR
Corrected -ACLR
Corrected +ACLR
Uncorrected Drain Eff
Corrected Drain Eff
45
-30
40
ACLR (dBc)
-35
35 Uncorrected ACLR
-40 -45
25 Drain Efficiency
-50
-20
15
-60
10
-65
5
-70
0 24
29
34
39
44
Output Power (dBm)
50% UnCorrected -ACLR
45%
UnCorrected +ACLR Corrected -ACLR
-30
40%
Corrected +ACLR UnCorrected Eff
-35
35%
Uncorrected ACLR
Corrected Eff
-40
30%
-45
25% Drain Efficiency
-50
20%
-55
Drain Efficiency (%)
-25
ACLR (dBc)
20
Corrected ACLR
-55
CGH21120F WCDMA Transfer with and without DPD correctionCGH21120F SingleWCDMA Channel WCDMA PAR with CFR Transfer with and without6.5dB DPD correction Channel WCDMA 6.5dB PAR with CFR VDS = 28 V, Single IVds=28V, = 500 mA, Frequency = 2.14 GHz Ids=500mA, Frequency=2.14GHz DS
30
Drain Efficiency (%)
EVM 5.65GHz
Drain Efficiency (%)
Gain (dB) and EVM (%)
12
EVM 5.5GHz
15% Corrected ACLR
-60
10%
-65
5%
-70
0% 15
20
25
30
35
Output Power (dBm)
40
45
50
Copyright © 2007-9 Cree, Inc. All rights reserved. Permission is given to reproduce this document provided the entire document (including this copyright notice) is duplicated. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
3
Note1: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Cree, Inc. 3026 East Cornwallis Road Research Triangle Park, North Carolina 27709 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.313.2733 www.cree.com/wireless
About Cree Inc. Cree is a market-leading innovator of semiconductor solutions for wireless and power applications, lighting-class LEDs, and LED lighting solutions. Cree’s product families include power-switching devices and radio-frequency/ wireless devices, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, and recessed LED down lights. Cree solutions are driving improvements in applications
such
as
variable-speed
motors,
wireless
communications, general illumination, backlighting and electronic signs and signals.
A publicly traded company founded in
1987,
Cree
now
employs
more than 3.000 people at its Durham, NC, headquarters and offices
in
Research
Triangle
Park, NC, Santa Barbara, CA, and Asia. The Cree
Durham, NC campus
facility is ISO/TS 16949 certified. Cree customers range from innovative lighting-fixture makers to defense-related federal agencies.
Contact For inquiries and sample requests, please contact the Cree Wireless team at: 919-313-5639 or [email protected]
Copyright © 2007-9 Cree, Inc. All rights reserved. Permission is given to reproduce this document provided the entire document (including this copyright notice) is duplicated. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4
Cree, Inc. 3026 East Cornwallis Road Research Triangle Park, North Carolina 27709 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.313.2733 www.cree.com/wireless
Doherty
CDPA21480, performance. CGH21240F
demonstration
provides
amplifier
innovative
The
amplifier
devices
with
uses
digital
two
CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR
UMTS of
-10 2.11 GHz Pre DPD
the
-20
pre-distortion
-30
2.11 GHz Post DPD 2.14 GHz Pre DPD 2.14 GHz Post DPD 2.17 GHz Pre DPD
> 50 % under W-CDMA
Power (dBm)
2.17 GHz Post DPD
correctability greater than 20 dB, providing efficiency
and average power of 80 W.
-40
-50
-60
-70
-80 -30
-20
-10
0
10
20
30
Frequency from Carrier Center (MHz)
• 900MHz, 2.5GHz, 3.5GHz, and 5.5GHz BWA and W-CDMA Transistors • High Efficiencies for the Complete Product Family • Extensive Characterization under W-CDMA and OFDM Signal Personalities • Highly Correctable under Digital Predistortion • Reference Design under Class A/B and Doherty
Cree’s GaN HEMTs are ideal for high efficiency, high frequency, broadband, deployment being driven by high data-rate, multi-carrier networks. GaN HEMT transistors are well suited for tower mounted high power amplifier (HPA) applications, where small size and low weight
Ma y2 00 9, R ev. 4.2
is a crucial focus.
1
Cree, Inc. 3026 East Cornwallis Road Research Triangle Park, NC 27709 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/wireless
GaN HEMT BTS Product Family1 Part Number
Frequency Band
Operating Voltage
Psat
Modulated Gain
ACLR
Pulsed Drain Efficiency
Package
CGH09120F
750 to 950 MHz
28 V
120 W
21 dB
-38 dB
75 %
440095
Part Number
Frequency Band
Operating Voltage
Psat
Modulated Gain
ACLR
Pulsed Drain Efficiency
Package
CGH21120F
1.8 to 2.3 GHz
28 V
110 W
15 dB
-35 dB
70 %
440162
CGH25120F
2.3 to 2.7 GHz
28 V
130 W
12.5 dB
-31 dB
60 %
440162
CGH21240F
1.8 to 2.3 GHz
28 V
215 W
15 dB
-35 dB
65 %
440117
Part Number
Frequency Band
Operating Voltage
Pave
Gain
802.162004 RCE2
Drain Efficiency
Package
CGH27015F
2.3 to 2.9 GHz
28 V
2W
15 dB
-34 dB
24 %
440166
CGH27015P
2.3 to 2.9 GHz
28 V
2W
15 dB
-34 dB
24 %
440196
CGH27030F
2.3 to 2.9 GHz
28 V
4W
15 dB
-34 dB
28 %
440166
CGH27060F
2.3 to 2.9 GHz
28 V
8W
14 dB
-34 dB
27 %
440193
Part Number
Frequency Band
Operating Voltage
Pave
Gain
802.162004 RCE2
Drain Efficiency
Package
CGH35015F
3.3 to 3.9 GHz
28 V
2W
12 dB
-34 dB
26 %
440166
CGH35015P
3.3 to 3.9 GHz
28 V
2W
12 dB
-34 dB
26 %
440196
CGH35030F
3.3 to 3.9 GHz
28 V
4W
12 dB
-34 dB
25 %
440166
CGH35060F
3.3 to 3.9 GHz
28 V
8W
12 dB
-34 dB
25 %
440193
Part Number
Frequency Band
Operating Voltage
Pave
Gain
802.162004 RCE2
Drain Efficiency
Package
CGH55015F
5.5 to 5.8 GHz
28 V
2W
11 dB
-34 dB
25 %
440166
CGH55030F
5.5 to 5.8 GHz
28 V
4W
10 dB
-34 dB
25 %
440166
Note1: All data is typical and was measured in amplifiers with at least 400MHz of power bandwidth. Note2: -34dB RCE is equivalent to 2% rms EVM.
Package Types 440117, 440162, 440193, 440095, 440166, 440196
Type: 4401 17 Size: 0.38” x 1.34”
Type: 4401 62 Size: 0.38” x 0.80”
Type: 4401 93 Size: 0.23” x 0.80”
Copyright © 2007-9 Cree, Inc. All rights reserved. Permission is given to reproduce this document provided the entire document (including this copyright notice) is duplicated. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
Type: 4400 95 Size: 0.23” x 0.80”
Type: 4401 66 Size: 0.16” x 0.55”
Type: 4401 96 Size 0.16” x 0.20”
Cree, Inc. 3026 East Cornwallis Road Research Triangle Park, North Carolina 27709 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.313.2733 www.cree.com/wireless
Typical Performance for BWA and W-CDMA Applications Gain, EVM1 and Efficiency of CGH55015F vs. Output Power in a Broadband Amplifier Circuit VDD = 28 IDQ = 75 mAOutput Power CGH55015F - Gain, EVM,V, & Efficiency versus
14
35 EVM 5.8GHz
Gain 5.5GHz
Gain 5.65GHz
Gain 5.8GHz
Efficiency 5.5GHz
Efficiency 5.65GHz
Efficiency 5.8GHz
30
10
25
8
20
6
15
4
10
2
5
0
0 15
20
25
30
35
Output Power (dBm)
40
WCDMA Characteristics with and without DPD Correction, ACLR, and Drain Efficiency vs Output Power of the CGH09120F measured in CGH09120F-TB Amplifier Circuit. Two Channel WCDMA 7.5dB PAR with CFR -20
50
-25
Uncorrected -ACLR
Uncorrected +ACLR
Corrected -ACLR
Corrected +ACLR
Uncorrected Drain Eff
Corrected Drain Eff
45
-30
40
ACLR (dBc)
-35
35 Uncorrected ACLR
-40 -45
25 Drain Efficiency
-50
-20
15
-60
10
-65
5
-70
0 24
29
34
39
44
Output Power (dBm)
50% UnCorrected -ACLR
45%
UnCorrected +ACLR Corrected -ACLR
-30
40%
Corrected +ACLR UnCorrected Eff
-35
35%
Uncorrected ACLR
Corrected Eff
-40
30%
-45
25% Drain Efficiency
-50
20%
-55
Drain Efficiency (%)
-25
ACLR (dBc)
20
Corrected ACLR
-55
CGH21120F WCDMA Transfer with and without DPD correctionCGH21120F SingleWCDMA Channel WCDMA PAR with CFR Transfer with and without6.5dB DPD correction Channel WCDMA 6.5dB PAR with CFR VDS = 28 V, Single IVds=28V, = 500 mA, Frequency = 2.14 GHz Ids=500mA, Frequency=2.14GHz DS
30
Drain Efficiency (%)
EVM 5.65GHz
Drain Efficiency (%)
Gain (dB) and EVM (%)
12
EVM 5.5GHz
15% Corrected ACLR
-60
10%
-65
5%
-70
0% 15
20
25
30
35
Output Power (dBm)
40
45
50
Copyright © 2007-9 Cree, Inc. All rights reserved. Permission is given to reproduce this document provided the entire document (including this copyright notice) is duplicated. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
3
Note1: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Cree, Inc. 3026 East Cornwallis Road Research Triangle Park, North Carolina 27709 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.313.2733 www.cree.com/wireless
About Cree Inc. Cree is a market-leading innovator of semiconductor solutions for wireless and power applications, lighting-class LEDs, and LED lighting solutions. Cree’s product families include power-switching devices and radio-frequency/ wireless devices, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, and recessed LED down lights. Cree solutions are driving improvements in applications
such
as
variable-speed
motors,
wireless
communications, general illumination, backlighting and electronic signs and signals.
A publicly traded company founded in
1987,
Cree
now
employs
more than 3.000 people at its Durham, NC, headquarters and offices
in
Research
Triangle
Park, NC, Santa Barbara, CA, and Asia. The Cree
Durham, NC campus
facility is ISO/TS 16949 certified. Cree customers range from innovative lighting-fixture makers to defense-related federal agencies.
Contact For inquiries and sample requests, please contact the Cree Wireless team at: 919-313-5639 or [email protected]
Copyright © 2007-9 Cree, Inc. All rights reserved. Permission is given to reproduce this document provided the entire document (including this copyright notice) is duplicated. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4
Cree, Inc. 3026 East Cornwallis Road Research Triangle Park, North Carolina 27709 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.313.2733 www.cree.com/wireless
