(1) GTO
Experimental Comparison and Study on the Performance of Pulse Thyristor and Gate-turn-off Thyristor for Pulsed Power Applications Speaker: Jian Qiu. jqiu@fudan edu cn [email protected]
Authors: Dongdong Wang, Jian Qiu, Kefu Liu, and Junfeng Rao. Institute of Electrical Light Sources, Fudan University, University Shanghai China
——Institute of Electrical Light Sources, Fudan University, China
Pulse Thyristors
Gate-turn-off Thyristor (GTO)
9 Pretty high current and di/dt rating (>10 kA/μs) High price
9 Relatively low price Low turn-on speed and thus low di/dt rating
——Institute of Electrical Light Sources, Fudan University, China—
Preliminary Test of the Turn-on Behavior of GTO and Pulse Thyristor G 4000
4 3
Current
Voltage
15
5
2
1000
10
5
-
-
-
-
-
-
-
+
+
+
+
+
+
+
+
P+
0
td
tf
A
3000
15
P+ emitter
N base
P base
5
0
Current (kA A)
10
1000
5
2
tf
-5
Time (2 μs/div)
(2) Pulse P l thyristor th i t
4 3
4 3
2
1
J1
0
td
N+ emitter
5
Current Voltage
(+Ve)
(3) Single island of GTO 20
-1000
+ n-
-5
Time (2 μs/div)
4000
2000
p -
n+
(1) GTO Anode-caathode voltage (V)
-
1
0
-1000
(0)
n+ Current (kA)
Anode-cathode voltag ge (V)
3000
2000
K
20
J2 ωn
0
1
J3 ωp
(4) Evolution E l ti off carriers i in the turn-on process
——Institute of Electrical Light Sources, Fudan University, China—
x
Use Magnetic Assist to Minimize Switch Loss 4000
20
3000
15
1000
10 Voltage
5
0
Initial relative permeability
Physical Size Volt-second product Delay time
(1) GTO
Nanocrystalline alloy (1K107)
4000
20
13.9k
3000
15
2000
10
1000
5
0
0
1 120 (OD)×60 (ID) ×240 (H) 7500 V·μs 2.5 μs
-1000
-5
Caused by parasitic capacitance and slow plasma spreading velocity Current (kA)
Saturated relative permeability
-5 Time (2 μs/div)
Voltage (V)
Material
Negative g voltage g and spike ?
0
-1000
Tabel 2. Parameters of the Magnetic Swtich
Curren nt (kA)
Voltaage (V)
Current
2000
Is the analysis right? How to verify?
Time (2 μs/div)
(2) Pulse thyristor ——Institute of Electrical Light Sources, Fudan University, China—
Different current distribution in each island island-ring ring of the GTO. GTO Caused by drive signal transfer delay
PSpice Simulation Model of GTO
6.0KA
Multi-cell 2T-3R Model of GTO Developed 1st ring by Tsay et al. 1990 4.0KA
This model captures much of GTO behavior (1) Turn-on and turn-offth times 5 ring (2) Current crowding due to excessive di/dt (3) Thermal effects. 2.0KA
0A
-2.0KA 5us I(LM1)
I(LM2)
10us I(LM4) I(LM5)
I(LM3)
15us
20us
25us
Time
One island-ring of the GTO PARAMETERS: tclose = 11u Rbus
{tclose} 1 U1
2
1
D2
Lbus 180nH 2
L3 1
Dbreak
70m
R21
V Q11
2 L1
R22
Q12
63m
1
{Lpar}
7.2k
Cs RGC1
40u
1m
RGC2
2
1m
63m
7.2k
RGC3
2
1m
63m
7.2k
7.2k Q24 NPN
R13
RGC4
2
1m
2 10nH
PNP R35
Q23 NPN
R12
R25
Q15
PNP R34
Q22 NPN
R11
Q14
PNP R33
Q21 NPN
R24
63m
PNP R32
7.2k
Lpar = 100u
Q13
63m
PNP R31
PARAMETERS:
R23
Q25 NPN
R14
RGC5
2
1m
R15 2 D3
LG 1
RG
RD1
RKC1 1m
2 40nH
1
1u
0
V1
I
0.01uH
RKC3
CD2
K_Linear COUPLING = {coupling}
20m LM2 0.01uH K_Linear COUPLING = 0.5
0.01uH
LM4
K_Linear COUPLING = 0.5
1m
0.01uH
2
C1 100n
L2
1 CD5
I
1nF
K M34
RKC5
40m
1 CD4
I
2
RD5
1m
LM3
1nF
K M23 2
RKC4
30m
1 CD3
I
1nF
RD4
1m
1
K M12 2
RD3
1m
LM1
1nF
RKC2
10m
1 CD1
V1 = 0 V2 = 80 TD = 10u TR = 1u TF = 2u PW = 11u PER = 100u
RD2
10nH LM5 I
1nF
0.01uH
1
K M45 2
K_Linear COUPLING = 0.5
2
PARAMETERS: coupling = 0.5
Tsay, C. L., R. Fischl, J. Schwartzenberg, H. Kan, and J. Barrow, “A high power circuit model for the gate turn off thyristor,” Digists 21st IEEE Power Electronics Specialists Conference, 1990 ——Institute of Electrical Light Sources, Fudan University, China—
Measure to Lower the Voltage Spike (1) Prolong the delay time of the magnetic assist 4000
20
4000
20
3000
15
3000
15
5
0
Voltage (V)
Voltage
GTO
0
-1000
Voltage
5
0
0
-1000
-5
15
2000
10
1000
5
0
0
-5
Pulse thyristor Voltage (V V)
3000
4000
20
3000
15
2000
10
1000
5
0
0
-1000
-5 Time (2 μs/div)
——Institute of Electrical Light Sources, Fudan University, China—
Cuurrent (kA)
20
Current (kA) (
Voltaage (V)
-5 Time (2 μs/div)
4000
Time (2 μs/div)
10
1000
Time (2 μs/div)
-1000
Current
2000
Current (kA)
1000
10
Current (kA)
Voltage (V)
C Current
2000
Measure to Lower the Voltage Spike (2) Add a series series-connected connected R-C R C circuit in parallel with the thyristor
GTO
Tabel 3. Test Results of the GTO Peak current
Pulse thyristor The discharging current of capacitor Ca provides a small current flowing through GTO and accelerates spreading of turn-on area inside the GTO
Current rise time Average di/dt value
17.3 kA 4.8 μs 3.6 kA/ μs
Maximum di/dt value
6 kA/ μs
T Turn-on L Loss
＜0 5 J ＜0.5
Delay time
2.5 μs
——Institute of Electrical Light Sources, Fudan University, China—
Conclusion (1) GTO exhibits excellent pulse operation abilities. (2) The time delay effect of the series-connected magnetic switch results in the anode-cathode voltage spike when large current rises steeply. (3) By increasing magnetic assist time and providing a small current flowing through the GTO before large current appears, the amplitude of the voltage spike has been greatly reduced. (4) The power dissipation associated with switching process is minified and GTO’s safe operation is guaranteed. (5) The design will permit construction of compact, light-weight serial switch strings required i d ffor high-voltage hi h l pulsed l d power sources to substitute b i ffor expensive i pulse l thyrsitors.
——Institute of Electrical Light Sources, Fudan University, China—
Our Research Group Focuses on All Solid-State Pulsed Power Sources
Output V Voltage (kV)
20
0
-20
-40
-60
-80
Time (2ms/div)
——Institute of Electrical Light Sources, Fudan University, China—
Thank you!
——Institute of Electrical Light Sources, Fudan University, China—
Authors: Dongdong Wang, Jian Qiu, Kefu Liu, and Junfeng Rao. Institute of Electrical Light Sources, Fudan University, University Shanghai China
——Institute of Electrical Light Sources, Fudan University, China
Pulse Thyristors
Gate-turn-off Thyristor (GTO)
9 Pretty high current and di/dt rating (>10 kA/μs) High price
9 Relatively low price Low turn-on speed and thus low di/dt rating
——Institute of Electrical Light Sources, Fudan University, China—
Preliminary Test of the Turn-on Behavior of GTO and Pulse Thyristor G 4000
4 3
Current
Voltage
15
5
2
1000
10
5
-
-
-
-
-
-
-
+
+
+
+
+
+
+
+
P+
0
td
tf
A
3000
15
P+ emitter
N base
P base
5
0
Current (kA A)
10
1000
5
2
tf
-5
Time (2 μs/div)
(2) Pulse P l thyristor th i t
4 3
4 3
2
1
J1
0
td
N+ emitter
5
Current Voltage
(+Ve)
(3) Single island of GTO 20
-1000
+ n-
-5
Time (2 μs/div)
4000
2000
p -
n+
(1) GTO Anode-caathode voltage (V)
-
1
0
-1000
(0)
n+ Current (kA)
Anode-cathode voltag ge (V)
3000
2000
K
20
J2 ωn
0
1
J3 ωp
(4) Evolution E l ti off carriers i in the turn-on process
——Institute of Electrical Light Sources, Fudan University, China—
x
Use Magnetic Assist to Minimize Switch Loss 4000
20
3000
15
1000
10 Voltage
5
0
Initial relative permeability
Physical Size Volt-second product Delay time
(1) GTO
Nanocrystalline alloy (1K107)
4000
20
13.9k
3000
15
2000
10
1000
5
0
0
1 120 (OD)×60 (ID) ×240 (H) 7500 V·μs 2.5 μs
-1000
-5
Caused by parasitic capacitance and slow plasma spreading velocity Current (kA)
Saturated relative permeability
-5 Time (2 μs/div)
Voltage (V)
Material
Negative g voltage g and spike ?
0
-1000
Tabel 2. Parameters of the Magnetic Swtich
Curren nt (kA)
Voltaage (V)
Current
2000
Is the analysis right? How to verify?
Time (2 μs/div)
(2) Pulse thyristor ——Institute of Electrical Light Sources, Fudan University, China—
Different current distribution in each island island-ring ring of the GTO. GTO Caused by drive signal transfer delay
PSpice Simulation Model of GTO
6.0KA
Multi-cell 2T-3R Model of GTO Developed 1st ring by Tsay et al. 1990 4.0KA
This model captures much of GTO behavior (1) Turn-on and turn-offth times 5 ring (2) Current crowding due to excessive di/dt (3) Thermal effects. 2.0KA
0A
-2.0KA 5us I(LM1)
I(LM2)
10us I(LM4) I(LM5)
I(LM3)
15us
20us
25us
Time
One island-ring of the GTO PARAMETERS: tclose = 11u Rbus
{tclose} 1 U1
2
1
D2
Lbus 180nH 2
L3 1
Dbreak
70m
R21
V Q11
2 L1
R22
Q12
63m
1
{Lpar}
7.2k
Cs RGC1
40u
1m
RGC2
2
1m
63m
7.2k
RGC3
2
1m
63m
7.2k
7.2k Q24 NPN
R13
RGC4
2
1m
2 10nH
PNP R35
Q23 NPN
R12
R25
Q15
PNP R34
Q22 NPN
R11
Q14
PNP R33
Q21 NPN
R24
63m
PNP R32
7.2k
Lpar = 100u
Q13
63m
PNP R31
PARAMETERS:
R23
Q25 NPN
R14
RGC5
2
1m
R15 2 D3
LG 1
RG
RD1
RKC1 1m
2 40nH
1
1u
0
V1
I
0.01uH
RKC3
CD2
K_Linear COUPLING = {coupling}
20m LM2 0.01uH K_Linear COUPLING = 0.5
0.01uH
LM4
K_Linear COUPLING = 0.5
1m
0.01uH
2
C1 100n
L2
1 CD5
I
1nF
K M34
RKC5
40m
1 CD4
I
2
RD5
1m
LM3
1nF
K M23 2
RKC4
30m
1 CD3
I
1nF
RD4
1m
1
K M12 2
RD3
1m
LM1
1nF
RKC2
10m
1 CD1
V1 = 0 V2 = 80 TD = 10u TR = 1u TF = 2u PW = 11u PER = 100u
RD2
10nH LM5 I
1nF
0.01uH
1
K M45 2
K_Linear COUPLING = 0.5
2
PARAMETERS: coupling = 0.5
Tsay, C. L., R. Fischl, J. Schwartzenberg, H. Kan, and J. Barrow, “A high power circuit model for the gate turn off thyristor,” Digists 21st IEEE Power Electronics Specialists Conference, 1990 ——Institute of Electrical Light Sources, Fudan University, China—
Measure to Lower the Voltage Spike (1) Prolong the delay time of the magnetic assist 4000
20
4000
20
3000
15
3000
15
5
0
Voltage (V)
Voltage
GTO
0
-1000
Voltage
5
0
0
-1000
-5
15
2000
10
1000
5
0
0
-5
Pulse thyristor Voltage (V V)
3000
4000
20
3000
15
2000
10
1000
5
0
0
-1000
-5 Time (2 μs/div)
——Institute of Electrical Light Sources, Fudan University, China—
Cuurrent (kA)
20
Current (kA) (
Voltaage (V)
-5 Time (2 μs/div)
4000
Time (2 μs/div)
10
1000
Time (2 μs/div)
-1000
Current
2000
Current (kA)
1000
10
Current (kA)
Voltage (V)
C Current
2000
Measure to Lower the Voltage Spike (2) Add a series series-connected connected R-C R C circuit in parallel with the thyristor
GTO
Tabel 3. Test Results of the GTO Peak current
Pulse thyristor The discharging current of capacitor Ca provides a small current flowing through GTO and accelerates spreading of turn-on area inside the GTO
Current rise time Average di/dt value
17.3 kA 4.8 μs 3.6 kA/ μs
Maximum di/dt value
6 kA/ μs
T Turn-on L Loss
＜0 5 J ＜0.5
Delay time
2.5 μs
——Institute of Electrical Light Sources, Fudan University, China—
Conclusion (1) GTO exhibits excellent pulse operation abilities. (2) The time delay effect of the series-connected magnetic switch results in the anode-cathode voltage spike when large current rises steeply. (3) By increasing magnetic assist time and providing a small current flowing through the GTO before large current appears, the amplitude of the voltage spike has been greatly reduced. (4) The power dissipation associated with switching process is minified and GTO’s safe operation is guaranteed. (5) The design will permit construction of compact, light-weight serial switch strings required i d ffor high-voltage hi h l pulsed l d power sources to substitute b i ffor expensive i pulse l thyrsitors.
——Institute of Electrical Light Sources, Fudan University, China—
Our Research Group Focuses on All Solid-State Pulsed Power Sources
Output V Voltage (kV)
20
0
-20
-40
-60
-80
Time (2ms/div)
——Institute of Electrical Light Sources, Fudan University, China—
Thank you!
——Institute of Electrical Light Sources, Fudan University, China—
