10s\\ A'XGa1XN \__-106a
US 20080296618A1
(19) United States (12) Patent Application Publication (10) Pub. No.: US 2008/0296618 A1 Suh et al. (54)
(43) Pub. Date:
P-GAN/ALGAN/ALN/GAN
Dec. 4, 2008
Related US. Application Data
ENHANCEMENT-MODE FIELD EFFECT
TRANSISTOR
(75) Inventors:
(60)
Provisional application No. 60/941,580, ?led on Jun. 1, 2007.
gl;)?%f::slsll;2" gfilslifrliarbara’ CA Montecito, CA (US)
Publication Classi?cation (51) Int. Cl. H01L 29/778 H01L 21/338
Correspondence Address:
(2006.01) (2006.01)
GATES & COOPER LLP
.
HOWARD 6701 CENTER HUGHES DRIVE CENTER WEST, SUITE 1050
(52)
LOS ANGELES, CA 90045 (US)
(57)
.
.
US. Cl. ............... .. 257/190, 438/172,
'
ABSTRACT
(73) Assignee;
THE REGENTS OF THE UNIVERSITY OF C ALIEORNIA, Oakland’ CA (Us)
An enhancement mode High Electron Mobility Transistor (HEMT) comprising a p-type nitride layer between the gate and a channel of the HEMT, for reducing an electron popu
(21) Appl, No;
12/131,704
Aluminum Nitride (AlN) layer between an AlGaN layer and
(22)
Jun. 2, 2008
lation under the gate. The HEMT may also comprise an buffer layer of the HEMT to reduce an on resistance of a
Filed:
Channel.
130
120 128 106\ Source
104
10s\\
Gate p-GaN
A'XGa1XN
112/7"'7 “““ " / GaN
/
110
124
114
132
J22
Drain
\__-106a """""" "\"'\116 \126
Patent Application Publication
Dec. 4, 2008 Sheet 1 0f 19
US 2008/0296618 Al
o:
32
m2(
w£2\ -
O,M sil. I/Vl m .“N:
//mor /zmwd8ESQv50ww \vor/ mN20?OmEN0? \
4/2: $2N?Aw:m:
zxémv?q
mm W .
w N -
6
/ \ / \ o8NO0% Lt w-.- r“ -w \x /,. \
@A
(19) United States (12) Patent Application Publication (10) Pub. No.: US 2008/0296618 A1 Suh et al. (54)
(43) Pub. Date:
P-GAN/ALGAN/ALN/GAN
Dec. 4, 2008
Related US. Application Data
ENHANCEMENT-MODE FIELD EFFECT
TRANSISTOR
(75) Inventors:
(60)
Provisional application No. 60/941,580, ?led on Jun. 1, 2007.
gl;)?%f::slsll;2" gfilslifrliarbara’ CA Montecito, CA (US)
Publication Classi?cation (51) Int. Cl. H01L 29/778 H01L 21/338
Correspondence Address:
(2006.01) (2006.01)
GATES & COOPER LLP
.
HOWARD 6701 CENTER HUGHES DRIVE CENTER WEST, SUITE 1050
(52)
LOS ANGELES, CA 90045 (US)
(57)
.
.
US. Cl. ............... .. 257/190, 438/172,
'
ABSTRACT
(73) Assignee;
THE REGENTS OF THE UNIVERSITY OF C ALIEORNIA, Oakland’ CA (Us)
An enhancement mode High Electron Mobility Transistor (HEMT) comprising a p-type nitride layer between the gate and a channel of the HEMT, for reducing an electron popu
(21) Appl, No;
12/131,704
Aluminum Nitride (AlN) layer between an AlGaN layer and
(22)
Jun. 2, 2008
lation under the gate. The HEMT may also comprise an buffer layer of the HEMT to reduce an on resistance of a
Filed:
Channel.
130
120 128 106\ Source
104
10s\\
Gate p-GaN
A'XGa1XN
112/7"'7 “““ " / GaN
/
110
124
114
132
J22
Drain
\__-106a """""" "\"'\116 \126
Patent Application Publication
Dec. 4, 2008 Sheet 1 0f 19
US 2008/0296618 Al
o:
32
m2(
w£2\ -
O,M sil. I/Vl m .“N:
//mor /zmwd8ESQv50ww \vor/ mN20?OmEN0? \
4/2: $2N?Aw:m:
zxémv?q
mm W .
w N -
6
/ \ / \ o8NO0% Lt w-.- r“ -w \x /,. \
@A
