7MBI100SA-060B Datasheet - Octopart
IGBT MODULE ( N series ) n Features • • • •
n Outline Drawing
Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( ~ 3 Times Rated Current )
n Equivalent Circuit
n Absolute Maximum Ratings ( Tc=25°C) Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Forward Current Surge Current Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque *1 Terminal Screw Torque *1
Symbols VCES VGES IC IC PULSE -IC PULSE PC VCES VCES IC IC PULSE PC VRRM IF(AV) IFSM Tj TStg VISO
Test Conditions
Continuous 1ms Continuous 1 device
Continuous 1ms 1 device
10ms
A.C. 1min.
Ratings 600 ± 20 100 200 150 400 600 ± 20 50 100 200 600 1 50 +150 -40 ∼ +125 2500 3.5 3.5
Units V A W V A W V A °C V Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
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n Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current Reverse Recovery Time
Symbols ICES IGES VGE(th) VCE(sat) Cies ton toff tf VF trr ICES IGES VCE(sat) ton toff tf IRRM trr
Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=100mA VGE=15V IC=100A f=1MHz, VGE=0V, VCE=10V VCC=300V IC =100A VGE=±15V RG = 24Ω IF=100A VGE=0V -di A IF=100A; VGE=-10V; /dt=300 /µs VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=15V IC=50A VCC=300V IC = 50A VGE=±15V RG = 51Ω VR=600V
Min.
Max. 3.0 15 4.5 7.5 2.8 6600 (typ.) 1.2 1.5 0.35 3.3 300 1.0 100 2.8 1.2 1.5 0.35 1.0 600
Units mA µA V pF µs V ns mA nA V µs mA ns
n Thermal Characteristics Items
Symbols
Thermal Resistance (1 device)
Rth(j-c)
Contact Thermal Resistance
Rth(c-f)
Test Conditions Inverter IGBT Inverter FRD Brake IGBT With Thermal Compound
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Min.
Max. 0.31 0.90 0.63 0.05 (typ.)
Units °C/W
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T j=125°C
T j=25°C 250
250 V GE=20V,15V,12V
V GE=20V,15V, 12V 200 C
150
Collector current : I
Collector current : I
C
[A]
[A]
200
10V
100
150
10V
100
50
50 8V 8V
0
0 0
1
2
3
4
5
6
0
4
5
6
Collector-Emitter vs. Gate-Emitter voltage
T j=25°C
T j=125°C
[V]
10 CE
[V]
8
6
IC=
4
200A 100A
2
8
Collector-Emitter voltage : V
CE
Collector-Emitter voltage : V
3
Collector-Emitter vs. Gate-Emitter voltage
50A
6
IC=
4
200A 100A 2
0
50A
0 0
5
10
15
20
25
0
Gate-Emitter voltage : V GE [V]
5
10
15
20
25
Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current
Switching time vs. Collector current
V CC =300V, R G =24 Ω , V GE =±15V, Tj=25°C
V CC =300V, R G =24 Ω , V GE =±15V, T j=125°C 1000
, t r , t off , t f [nsec]
t on t off
on
tr tf
Switching time : t
100
t off t on
, t r , t off , t f [nsec]
1000
on
2
Collector-Emitter voltage : V CE [V]
10
Switching time : t
1
Collector-Emitter voltage : V CE [V]
10
tr tf
100
10 0
50
100
150
0
50
100
Collector current : I C [A]
Collector current : I C [A]
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150
Switching time vs. R G
Dynamic input characteristics
V CC =300V, I C=100A, V GE =±15V, Tj=25°C
T j=25°C
Switching time : t
[V] CE
Collector-Emitter voltage : V
tr tf 100
10 10
25 V CC =200V
t on t off
1000
on
, t r , t off , t f [nsec]
500
300V 400
300
15
200
10
100
5
0
100
20
400V
0
100
Gate resistance : R G [ Ω ]
200
300
400
0 600
500
Gate charge : Q G [nC]
Forward current vs. Forward voltage
Reverse recovery characteristics
V GE =OV
t rr , I rr vs. I F
250
100
150
100
50
:t
I rr 125°C t rr 25°C
Reverse recovery time
Reverse recovery current : I
Forward current : I
F
rr
[A]
[A]
200
rr [nsec]
t rr 125°C
T j=125°C 25°C
0
I rr 25°C
10 0
1
2
3
4
0
50
100
150
Forward voltage : V F [V]
Forward current : I F [A]
Transient thermal resistance
+V GE =15V, -V GE< 15V, T j24 Ω
Reversed biased safe operating area 1000 Diode
[°C/W]
1
[A]
th(j-c)
C
IGBT
Collector current : I
Thermal resistance : R
800
Brake IGBT
0,1
SCSOA
600
(non-repetitive pulse)
400
200 RBSOA (Repetitive pulse) 0,01 0,001
0 0,01
0,1
1
Pulse width : PW [sec]
0
100
200
300
400
500
Collector-Emitter voltage : V CE [V]
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600
Switching loss vs. Collector current
Capacitance vs. Collector-Emitter voltage
V CC =300V, R G =24 Ω , V GE =±15V
T j=25°C
8
E on 125°C 4
E on 25°C
2 E rr 125°C E rr 25°C
0 0
50
100
150
10 C ies
ies
E off 25°C
6
Capacitance : C
Switching loss : E
, C oes , C res [nF]
E off 125°C
on
, E off , E rr [mJ/cycle]
10
1
C oes C res
0,1 200
Collector Current : I C [A]
0
5
10
15
20
25
Collector-Emitter Voltage : V CE [V]
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30
35
Brake Chopper IGBT Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T j =125°C
T j =25°C 125
125
V GE =20V,15V, 12V
V GE =20V,15V,12V 100
75
10V
50
75
Collector current : I
Collector current : I
C
C
[A]
[A]
100
10V
50
25
25
8V 8V 0
0
1
2
3
4
0
5
4
5
Collector-Emitter vs. Gate-Emitter voltage
T j =25°C
T j =125°C
CE
[V]
[V]
8
6
4
IC= 100A 50A 25A
2
8
Collector-Emitter voltage : V
CE
3
10
6
IC=
4
100A 50A
2
25A
0 0
5
10
15
20
25
0
Gate-Emitter voltage : V G E [V]
5
10
15
20
25
Gate-Emitter voltage : V G E [V]
Switching time vs. Collector current
Switching time vs. Collector current
V CC =300V, R G =51 Ω , V GE ±15V, Tj =25°C
V CC =300V, R G =51 Ω , V GE =±15V, T j =125°C 1000
, t r , t off , t f [nsec]
t on t off
on
tr tf
tr tf
100
Switching time : t
100
t off t on
, t r , t off , t f [nsec]
1000
on
2
Collector-Emitter vs. Gate-Emitter voltage
0
Switching time : t
1
Collector-Emitter voltage : V CE [V]
10
Collector-Emitter voltage : V
0
Collector-Emitter voltage : V CE [V]
10 0
20
40
60
80
10 0
20
40
60
Collector current : I C [A]
Collector current : I C [A]
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80
Brake Chopper IGBT Switching time vs. R G
Dynamic input characteristics
V CC =300V, I C =50A, V GE =±15V, Tj =25°C
T j =25°C
CE
25 V CC =200V 300V 20
400
400V Collector-Emitter voltage : V
Switching time : t
[V]
t on t off
1000
tr tf
on
, t r , t off , t f [nsec]
500
100
10 10
300
15
200
10
100
5
0 100
0
50
100
Reversed biased safe operating area
0 300
V CC =300V, R G =51 Ω , V GE =±15V 6 , E off , E rr [mJ/cycle]
500
C
[A]
400
SCSOA
300
on
(non-repetitive pulse)
200
Switching loss : E
Collector current : I
250
Switching loss vs. Collector current
+V GE =15V, -V GE
n Outline Drawing
Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( ~ 3 Times Rated Current )
n Equivalent Circuit
n Absolute Maximum Ratings ( Tc=25°C) Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Forward Current Surge Current Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque *1 Terminal Screw Torque *1
Symbols VCES VGES IC IC PULSE -IC PULSE PC VCES VCES IC IC PULSE PC VRRM IF(AV) IFSM Tj TStg VISO
Test Conditions
Continuous 1ms Continuous 1 device
Continuous 1ms 1 device
10ms
A.C. 1min.
Ratings 600 ± 20 100 200 150 400 600 ± 20 50 100 200 600 1 50 +150 -40 ∼ +125 2500 3.5 3.5
Units V A W V A W V A °C V Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
http://store.iiic.cc/
n Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current Reverse Recovery Time
Symbols ICES IGES VGE(th) VCE(sat) Cies ton toff tf VF trr ICES IGES VCE(sat) ton toff tf IRRM trr
Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=100mA VGE=15V IC=100A f=1MHz, VGE=0V, VCE=10V VCC=300V IC =100A VGE=±15V RG = 24Ω IF=100A VGE=0V -di A IF=100A; VGE=-10V; /dt=300 /µs VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=15V IC=50A VCC=300V IC = 50A VGE=±15V RG = 51Ω VR=600V
Min.
Max. 3.0 15 4.5 7.5 2.8 6600 (typ.) 1.2 1.5 0.35 3.3 300 1.0 100 2.8 1.2 1.5 0.35 1.0 600
Units mA µA V pF µs V ns mA nA V µs mA ns
n Thermal Characteristics Items
Symbols
Thermal Resistance (1 device)
Rth(j-c)
Contact Thermal Resistance
Rth(c-f)
Test Conditions Inverter IGBT Inverter FRD Brake IGBT With Thermal Compound
http://store.iiic.cc/
Min.
Max. 0.31 0.90 0.63 0.05 (typ.)
Units °C/W
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T j=125°C
T j=25°C 250
250 V GE=20V,15V,12V
V GE=20V,15V, 12V 200 C
150
Collector current : I
Collector current : I
C
[A]
[A]
200
10V
100
150
10V
100
50
50 8V 8V
0
0 0
1
2
3
4
5
6
0
4
5
6
Collector-Emitter vs. Gate-Emitter voltage
T j=25°C
T j=125°C
[V]
10 CE
[V]
8
6
IC=
4
200A 100A
2
8
Collector-Emitter voltage : V
CE
Collector-Emitter voltage : V
3
Collector-Emitter vs. Gate-Emitter voltage
50A
6
IC=
4
200A 100A 2
0
50A
0 0
5
10
15
20
25
0
Gate-Emitter voltage : V GE [V]
5
10
15
20
25
Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current
Switching time vs. Collector current
V CC =300V, R G =24 Ω , V GE =±15V, Tj=25°C
V CC =300V, R G =24 Ω , V GE =±15V, T j=125°C 1000
, t r , t off , t f [nsec]
t on t off
on
tr tf
Switching time : t
100
t off t on
, t r , t off , t f [nsec]
1000
on
2
Collector-Emitter voltage : V CE [V]
10
Switching time : t
1
Collector-Emitter voltage : V CE [V]
10
tr tf
100
10 0
50
100
150
0
50
100
Collector current : I C [A]
Collector current : I C [A]
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150
Switching time vs. R G
Dynamic input characteristics
V CC =300V, I C=100A, V GE =±15V, Tj=25°C
T j=25°C
Switching time : t
[V] CE
Collector-Emitter voltage : V
tr tf 100
10 10
25 V CC =200V
t on t off
1000
on
, t r , t off , t f [nsec]
500
300V 400
300
15
200
10
100
5
0
100
20
400V
0
100
Gate resistance : R G [ Ω ]
200
300
400
0 600
500
Gate charge : Q G [nC]
Forward current vs. Forward voltage
Reverse recovery characteristics
V GE =OV
t rr , I rr vs. I F
250
100
150
100
50
:t
I rr 125°C t rr 25°C
Reverse recovery time
Reverse recovery current : I
Forward current : I
F
rr
[A]
[A]
200
rr [nsec]
t rr 125°C
T j=125°C 25°C
0
I rr 25°C
10 0
1
2
3
4
0
50
100
150
Forward voltage : V F [V]
Forward current : I F [A]
Transient thermal resistance
+V GE =15V, -V GE< 15V, T j24 Ω
Reversed biased safe operating area 1000 Diode
[°C/W]
1
[A]
th(j-c)
C
IGBT
Collector current : I
Thermal resistance : R
800
Brake IGBT
0,1
SCSOA
600
(non-repetitive pulse)
400
200 RBSOA (Repetitive pulse) 0,01 0,001
0 0,01
0,1
1
Pulse width : PW [sec]
0
100
200
300
400
500
Collector-Emitter voltage : V CE [V]
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600
Switching loss vs. Collector current
Capacitance vs. Collector-Emitter voltage
V CC =300V, R G =24 Ω , V GE =±15V
T j=25°C
8
E on 125°C 4
E on 25°C
2 E rr 125°C E rr 25°C
0 0
50
100
150
10 C ies
ies
E off 25°C
6
Capacitance : C
Switching loss : E
, C oes , C res [nF]
E off 125°C
on
, E off , E rr [mJ/cycle]
10
1
C oes C res
0,1 200
Collector Current : I C [A]
0
5
10
15
20
25
Collector-Emitter Voltage : V CE [V]
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30
35
Brake Chopper IGBT Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T j =125°C
T j =25°C 125
125
V GE =20V,15V, 12V
V GE =20V,15V,12V 100
75
10V
50
75
Collector current : I
Collector current : I
C
C
[A]
[A]
100
10V
50
25
25
8V 8V 0
0
1
2
3
4
0
5
4
5
Collector-Emitter vs. Gate-Emitter voltage
T j =25°C
T j =125°C
CE
[V]
[V]
8
6
4
IC= 100A 50A 25A
2
8
Collector-Emitter voltage : V
CE
3
10
6
IC=
4
100A 50A
2
25A
0 0
5
10
15
20
25
0
Gate-Emitter voltage : V G E [V]
5
10
15
20
25
Gate-Emitter voltage : V G E [V]
Switching time vs. Collector current
Switching time vs. Collector current
V CC =300V, R G =51 Ω , V GE ±15V, Tj =25°C
V CC =300V, R G =51 Ω , V GE =±15V, T j =125°C 1000
, t r , t off , t f [nsec]
t on t off
on
tr tf
tr tf
100
Switching time : t
100
t off t on
, t r , t off , t f [nsec]
1000
on
2
Collector-Emitter vs. Gate-Emitter voltage
0
Switching time : t
1
Collector-Emitter voltage : V CE [V]
10
Collector-Emitter voltage : V
0
Collector-Emitter voltage : V CE [V]
10 0
20
40
60
80
10 0
20
40
60
Collector current : I C [A]
Collector current : I C [A]
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80
Brake Chopper IGBT Switching time vs. R G
Dynamic input characteristics
V CC =300V, I C =50A, V GE =±15V, Tj =25°C
T j =25°C
CE
25 V CC =200V 300V 20
400
400V Collector-Emitter voltage : V
Switching time : t
[V]
t on t off
1000
tr tf
on
, t r , t off , t f [nsec]
500
100
10 10
300
15
200
10
100
5
0 100
0
50
100
Reversed biased safe operating area
0 300
V CC =300V, R G =51 Ω , V GE =±15V 6 , E off , E rr [mJ/cycle]
500
C
[A]
400
SCSOA
300
on
(non-repetitive pulse)
200
Switching loss : E
Collector current : I
250
Switching loss vs. Collector current
+V GE =15V, -V GE
