Datasheet BSP613P - Infineon Technologies
BSP613P SIPMOS Small-Signal-Transistor Feature
Product Summary
• P-Channel
VDS
• Enhancement mode
RDS(on)
• Avalanche rated
ID
• dv/dt rated
-60
V
0.13
Ω
-2.9
A
PG-SOT223
• Ideal for fast switching buck converter
Drain pin 2,4 Gate pin1
• Qualified according to AEC Q101
Source pin 3
• Halogenfree according to IE C 61249221
Type
Package
Tape and reel
BSP613P
PG-SOT223
H6327: 1000pcs/r. Non Dry
Packaging
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current
Marking BSP613P
Value
Unit A
ID
TA=25°C
-2.9
TA=70°C
-2.3 ID puls
-11.6
EAS
150
Avalanche energy, periodic limited by Tjmax
EAR
0.18
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
1.8
W
-55... +150
°C
Pulsed drain current TA=25°C
Avalanche energy, single pulse
mJ
ID=2.9 A , V DD=-25V, RGS=25Ω
kV/µs
IS=2.9A, VDS=-48V, di/dt=-200A/µs, T jmax=150°C
TA=25°C
Operating and storage temperature
T j , Tstg
IEC climatic category; DIN IEC 68-1
55/150/56
ESD Class JESD22-A114-HBM Rev.2.8
Class 1c
Page 1
2016-05-30
BSP613P Thermal Characteristics Parameter
Symbol
Values
Unit
min.
typ.
max.
RthJS
-
-
19
Thermal resistance, junction - ambient, leaded
RthJA
-
100
-
SMD version, device on PCB:
RthJA -
-
100
-
-
70
Characteristics Thermal resistance, junction - soldering point
K/W
(Pin 4)
@ min. footprint @ 6 cm2 cooling area
1)
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-60
-
-
VGS(th)
-2.1
-3
-4
Static Characteristics Drain-source breakdown voltage
V
V GS=0, I D=-250µA
Gate threshold voltage, VGS = V DS ID=-1mA
Zero gate voltage drain current
µA
IDSS
V DS=-60V, VGS=0, Tj=25°C
-
-0.1
-1
V DS=-60V, VGS=0, Tj=125°C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
0.11
0.13
Ω
Gate-source leakage current V GS=-20V, VDS=0
Drain-source on-state resistance V GS=-10V, I D=2.9A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.8
Page 2
2016-05-30
BSP613P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
2.7
5.4
-
S pF
Dynamic Characteristics Transconductance
g fs
|VDS|≥2*|I D|*RDS(on)max , ID=2.9A
Input capacitance
Ciss
V GS=0, V DS=-25V,
-
715
875
Output capacitance
Coss
f=1MHz
-
230
295
Reverse transfer capacitance
Crss
-
90
120
Turn-on delay time
td(on)
V DD=-30V, VGS=-10V,
-
6.7
17
Rise time
tr
ID=2.9A, RG=2.7Ω
-
9
18
Turn-off delay time
td(off)
-
26
52
Fall time
tf
-
7
19
-
2.5
3.8
-
8.9
14.3
-
22
33
V(plateau) V DD=-48V, I D=2.9A
-
-3.9
-
V
IS
-
-
-2.9
A
-
-
-11.6
ns
Gate Charge Characteristics Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
V DD=-48V, I D=2.9A
V DD=-48V, I D=2.9A,
nC
V GS=0 to -10V
Gate plateau voltage Reverse Diode Inverse diode continuous
TA=25°C
forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage
VSD
V GS=0V, |I F| = |I S|
-
-0.8
-1.1
V
Reverse recovery time
trr
V R=-30V, |IF| = |I S|,
-
37.2
79
ns
Reverse recovery charge
Qrr
di F/dt=100A/µs
-
59.8
112
nC
Rev.2.8
Page 3
2016-05-30
BSP613P 1 Power Dissipation
2 Drain current
Ptot = f (TA)
ID = f (TA) parameter: VGS≥ 10 V
1.9
3.2
W A 1.6 2.4
1.2
ID
P tot
1.4
1
2
1.6
0.8 1.2 0.6 0.8 0.4 0.4
0.2 0
0
20
40
60
80
100
120
°C
0
160
0
20
40
60
80
100
120
TA
4 Transient thermal impedance
ID = f ( VDS )
ZthJC = f(tp)
parameter : D = 0 , TA = 25 °C
parameter: D = t p / T
2
K/W
/ID 1
10
1
10
0
t = 100.0 p
S
ID
VD
) (on DS
Z thJC
= R
10
2
10
A
10
160
TA
3 Safe operating area
10
°C
1 ms
0
10
-1
10
-2
10 ms
D = 0.50 0.20 0.10
10
-1
10
-3
10
-4
10
-5
0.05 0.02
single pulse
0.01
DC 10
-2
-10
-1
-10
0
-10
1
V
-10
2
VDS Rev.2.8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp Page 4
2016-05-30
BSP613P 5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS)
RDS(on) = f (ID)
parameter: Tj =25°C
parameter: VGS; Tj = 25 °C 0.5
7
A
Ω
Vgs = 5V
6
Vgs = 10V
-I D
5
Vgs = 4.5V
4.5 4
R DS(on)
0.4
5.5
Vgs = 4V
Vgs = 4,5V
0.35 0.3
Vgs = 6V
0.25
3.5
Vgs = 5V
3
0.2
2.5 Vgs = 4V
2
0.15
1.5
0.1
1
Vgs=3.5V
0
0.5
1
1.5
2
2.5
3
3.5
Vgs = 10V
0.05
0.5 0
Vgs = 6V
4
0
V 5 -VDS
0
1
2
3
A
4
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); |VDS|≥ 2 x |I D| x RDS(on)max
g fs = f(I D)
parameter: Tj = 25 °C
parameter: Tj = 25 °C
8
8
A
S
6
gfs
ID
6
5
5
4
4
3
3
2
2
1
1
0
6
-ID
0
Rev.2.8
1
2
3
4
5
0
7 V -VGS
Page 5
0
1
2
3
4
5
6
7
8
A -ID
10
2016-05-30
BSP613P 9 Drain-source on-state resistance
10 Gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (Tj)
parameter : I D = -2.9 A, V GS = -10 V
parameter: VGS = VDS , ID = -1 mA -5.0
0.34
W
V 98%
-4.0
VGS(th)
RDS(on)
0.28 0.24
0.20
0.16
-3.5 typ
-3.0
98%
-2.5
typ
-2.0
2%
0.12 -1.5 0.08 -1.0 0.04
-0.5
0.00 -60
-20
20
60
°C
100
0.0 -60
180
-20
20
60
°C
100
Tj
180
Tj
11 Typ. capacitances
12 Forward characteristics of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS=0V, f=1 MHz
parameter: Tj , tp = 80 µs
10
4
-10 2
pF
A
10 3
-10 1
IF
C
Ciss
Coss 10 2
-10 0
Crss
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0
-5
-10
-15
-20
-25
-30
V
-10 -1 0.0
-40
-0.8
-1.2
-1.6
-2.0
-2.4 V
-3.0
VSD
VDS
Rev.2.8
-0.4
Page 6
2016-05-30
BSP613P 13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (T j)
VGS = f (QG), parameter: VDS ; Tj = 25 °C
par.: ID = 2.9 A , V DD = -25 V, RGS = 25 Ω
ID = 2.9 A pulsed;
160
16
mJ
V
12
V GS
E AS
120
100
10 0.2 VDS max
80
8 0.8 VDS max
60
6
40
4
20
2
0 25
45
65
85
105
125
ºC
0
165
Tj
0
4
8
12
16
20
24
28 nC
34
|QG |
15 Drain-source breakdown voltage V(BR)DSS = f (Tj) -72
V(BR)DSS
V
-68 -66 -64 -62 -60 -58 -56 -54 -60
-20
20
60
100
°C
180
Tj Rev.2.8
Page 7
2016-05-30
BSP613P Package Outline SOT-223
Footprint Soldering type: Reflow soldering
Soldering type: Wave soldering
Tape and Reel
Dimensions in mm Rev.2.8
Page 8
2016-05-30
-60VSIPMOSSmallSignalTransistor BSP613P
RevisionHistory BSP613P Revision:2016-06-13,Rev.2.8 Previous Revision Revision
Date
Subjects (major changes since last revision)
2.8
2016-06-13
Insert package outlines
TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
9
Rev.2.8,2016-06-13
Product Summary
• P-Channel
VDS
• Enhancement mode
RDS(on)
• Avalanche rated
ID
• dv/dt rated
-60
V
0.13
Ω
-2.9
A
PG-SOT223
• Ideal for fast switching buck converter
Drain pin 2,4 Gate pin1
• Qualified according to AEC Q101
Source pin 3
• Halogenfree according to IE C 61249221
Type
Package
Tape and reel
BSP613P
PG-SOT223
H6327: 1000pcs/r. Non Dry
Packaging
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current
Marking BSP613P
Value
Unit A
ID
TA=25°C
-2.9
TA=70°C
-2.3 ID puls
-11.6
EAS
150
Avalanche energy, periodic limited by Tjmax
EAR
0.18
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
1.8
W
-55... +150
°C
Pulsed drain current TA=25°C
Avalanche energy, single pulse
mJ
ID=2.9 A , V DD=-25V, RGS=25Ω
kV/µs
IS=2.9A, VDS=-48V, di/dt=-200A/µs, T jmax=150°C
TA=25°C
Operating and storage temperature
T j , Tstg
IEC climatic category; DIN IEC 68-1
55/150/56
ESD Class JESD22-A114-HBM Rev.2.8
Class 1c
Page 1
2016-05-30
BSP613P Thermal Characteristics Parameter
Symbol
Values
Unit
min.
typ.
max.
RthJS
-
-
19
Thermal resistance, junction - ambient, leaded
RthJA
-
100
-
SMD version, device on PCB:
RthJA -
-
100
-
-
70
Characteristics Thermal resistance, junction - soldering point
K/W
(Pin 4)
@ min. footprint @ 6 cm2 cooling area
1)
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-60
-
-
VGS(th)
-2.1
-3
-4
Static Characteristics Drain-source breakdown voltage
V
V GS=0, I D=-250µA
Gate threshold voltage, VGS = V DS ID=-1mA
Zero gate voltage drain current
µA
IDSS
V DS=-60V, VGS=0, Tj=25°C
-
-0.1
-1
V DS=-60V, VGS=0, Tj=125°C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
0.11
0.13
Ω
Gate-source leakage current V GS=-20V, VDS=0
Drain-source on-state resistance V GS=-10V, I D=2.9A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.8
Page 2
2016-05-30
BSP613P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
2.7
5.4
-
S pF
Dynamic Characteristics Transconductance
g fs
|VDS|≥2*|I D|*RDS(on)max , ID=2.9A
Input capacitance
Ciss
V GS=0, V DS=-25V,
-
715
875
Output capacitance
Coss
f=1MHz
-
230
295
Reverse transfer capacitance
Crss
-
90
120
Turn-on delay time
td(on)
V DD=-30V, VGS=-10V,
-
6.7
17
Rise time
tr
ID=2.9A, RG=2.7Ω
-
9
18
Turn-off delay time
td(off)
-
26
52
Fall time
tf
-
7
19
-
2.5
3.8
-
8.9
14.3
-
22
33
V(plateau) V DD=-48V, I D=2.9A
-
-3.9
-
V
IS
-
-
-2.9
A
-
-
-11.6
ns
Gate Charge Characteristics Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
V DD=-48V, I D=2.9A
V DD=-48V, I D=2.9A,
nC
V GS=0 to -10V
Gate plateau voltage Reverse Diode Inverse diode continuous
TA=25°C
forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage
VSD
V GS=0V, |I F| = |I S|
-
-0.8
-1.1
V
Reverse recovery time
trr
V R=-30V, |IF| = |I S|,
-
37.2
79
ns
Reverse recovery charge
Qrr
di F/dt=100A/µs
-
59.8
112
nC
Rev.2.8
Page 3
2016-05-30
BSP613P 1 Power Dissipation
2 Drain current
Ptot = f (TA)
ID = f (TA) parameter: VGS≥ 10 V
1.9
3.2
W A 1.6 2.4
1.2
ID
P tot
1.4
1
2
1.6
0.8 1.2 0.6 0.8 0.4 0.4
0.2 0
0
20
40
60
80
100
120
°C
0
160
0
20
40
60
80
100
120
TA
4 Transient thermal impedance
ID = f ( VDS )
ZthJC = f(tp)
parameter : D = 0 , TA = 25 °C
parameter: D = t p / T
2
K/W
/ID 1
10
1
10
0
t = 100.0 p
S
ID
VD
) (on DS
Z thJC
= R
10
2
10
A
10
160
TA
3 Safe operating area
10
°C
1 ms
0
10
-1
10
-2
10 ms
D = 0.50 0.20 0.10
10
-1
10
-3
10
-4
10
-5
0.05 0.02
single pulse
0.01
DC 10
-2
-10
-1
-10
0
-10
1
V
-10
2
VDS Rev.2.8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp Page 4
2016-05-30
BSP613P 5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS)
RDS(on) = f (ID)
parameter: Tj =25°C
parameter: VGS; Tj = 25 °C 0.5
7
A
Ω
Vgs = 5V
6
Vgs = 10V
-I D
5
Vgs = 4.5V
4.5 4
R DS(on)
0.4
5.5
Vgs = 4V
Vgs = 4,5V
0.35 0.3
Vgs = 6V
0.25
3.5
Vgs = 5V
3
0.2
2.5 Vgs = 4V
2
0.15
1.5
0.1
1
Vgs=3.5V
0
0.5
1
1.5
2
2.5
3
3.5
Vgs = 10V
0.05
0.5 0
Vgs = 6V
4
0
V 5 -VDS
0
1
2
3
A
4
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); |VDS|≥ 2 x |I D| x RDS(on)max
g fs = f(I D)
parameter: Tj = 25 °C
parameter: Tj = 25 °C
8
8
A
S
6
gfs
ID
6
5
5
4
4
3
3
2
2
1
1
0
6
-ID
0
Rev.2.8
1
2
3
4
5
0
7 V -VGS
Page 5
0
1
2
3
4
5
6
7
8
A -ID
10
2016-05-30
BSP613P 9 Drain-source on-state resistance
10 Gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (Tj)
parameter : I D = -2.9 A, V GS = -10 V
parameter: VGS = VDS , ID = -1 mA -5.0
0.34
W
V 98%
-4.0
VGS(th)
RDS(on)
0.28 0.24
0.20
0.16
-3.5 typ
-3.0
98%
-2.5
typ
-2.0
2%
0.12 -1.5 0.08 -1.0 0.04
-0.5
0.00 -60
-20
20
60
°C
100
0.0 -60
180
-20
20
60
°C
100
Tj
180
Tj
11 Typ. capacitances
12 Forward characteristics of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS=0V, f=1 MHz
parameter: Tj , tp = 80 µs
10
4
-10 2
pF
A
10 3
-10 1
IF
C
Ciss
Coss 10 2
-10 0
Crss
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0
-5
-10
-15
-20
-25
-30
V
-10 -1 0.0
-40
-0.8
-1.2
-1.6
-2.0
-2.4 V
-3.0
VSD
VDS
Rev.2.8
-0.4
Page 6
2016-05-30
BSP613P 13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (T j)
VGS = f (QG), parameter: VDS ; Tj = 25 °C
par.: ID = 2.9 A , V DD = -25 V, RGS = 25 Ω
ID = 2.9 A pulsed;
160
16
mJ
V
12
V GS
E AS
120
100
10 0.2 VDS max
80
8 0.8 VDS max
60
6
40
4
20
2
0 25
45
65
85
105
125
ºC
0
165
Tj
0
4
8
12
16
20
24
28 nC
34
|QG |
15 Drain-source breakdown voltage V(BR)DSS = f (Tj) -72
V(BR)DSS
V
-68 -66 -64 -62 -60 -58 -56 -54 -60
-20
20
60
100
°C
180
Tj Rev.2.8
Page 7
2016-05-30
BSP613P Package Outline SOT-223
Footprint Soldering type: Reflow soldering
Soldering type: Wave soldering
Tape and Reel
Dimensions in mm Rev.2.8
Page 8
2016-05-30
-60VSIPMOSSmallSignalTransistor BSP613P
RevisionHistory BSP613P Revision:2016-06-13,Rev.2.8 Previous Revision Revision
Date
Subjects (major changes since last revision)
2.8
2016-06-13
Insert package outlines
TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
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