Dynamics of Back Electron Transfer in Dye-Sensitized ... AWS
[Electronic Supporting Information (ESI) to accompany:]
Dynamics of Back Electron Transfer in Dye-Sensitized Solar Cells Featuring 4-tert-Butylpyridine and Atomic-Layer-Deposited Alumina as Surface Modifiers Michael J. Katz,a Michael J. DeVries Vermeer,a,b Omar K. Farha,a Michael J. Pellin,a,b and Joseph T. Hupp*a,b,c a
b
c
Department of Chemistry and International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113,
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439
Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439
Table of Contents Section S1. Incident Photon-to-Current Efficiency for Iodide/Triiodide-Containing DSCs.
S2
Section S2. Open-Circuit Voltage/Photovoltage decay of Co(phen)33+2+ and TBP-containing DSCs. S3
S1
Section S1: Incident Photon-to-Current Efficiency for Iodide/Triiodide-Containing DSCs (a)
(b)
(c)
(d)
Figure S1: Front-side and Back-side Incident photon-to-current collection efficiency (IPCE) for iodide containing cells with (a) no additives/coatings, (b) TBP additive, (c) Al2O3 coating, and (d) TBP and Al2O3
S2
Section S2. Open-Circuit Voltage/Photovoltage decay of Co(phen)33+2+ and TBP-containing DSCs.
Figure S2: Comparison of open-circuit photovoltage decay (OCPVD), and open-circuit voltage decay (OCVD) measurements for DSCs containing Co(phen)33+/2+ as the redox shuttle. Blue: OCPVD with TBP; red: OCVD with TBP; dark blue: OCPVD with TBP & Al2O3; brown: OCVD with TBP & Al2O3.
S3
Dynamics of Back Electron Transfer in Dye-Sensitized Solar Cells Featuring 4-tert-Butylpyridine and Atomic-Layer-Deposited Alumina as Surface Modifiers Michael J. Katz,a Michael J. DeVries Vermeer,a,b Omar K. Farha,a Michael J. Pellin,a,b and Joseph T. Hupp*a,b,c a
b
c
Department of Chemistry and International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113,
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439
Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439
Table of Contents Section S1. Incident Photon-to-Current Efficiency for Iodide/Triiodide-Containing DSCs.
S2
Section S2. Open-Circuit Voltage/Photovoltage decay of Co(phen)33+2+ and TBP-containing DSCs. S3
S1
Section S1: Incident Photon-to-Current Efficiency for Iodide/Triiodide-Containing DSCs (a)
(b)
(c)
(d)
Figure S1: Front-side and Back-side Incident photon-to-current collection efficiency (IPCE) for iodide containing cells with (a) no additives/coatings, (b) TBP additive, (c) Al2O3 coating, and (d) TBP and Al2O3
S2
Section S2. Open-Circuit Voltage/Photovoltage decay of Co(phen)33+2+ and TBP-containing DSCs.
Figure S2: Comparison of open-circuit photovoltage decay (OCPVD), and open-circuit voltage decay (OCVD) measurements for DSCs containing Co(phen)33+/2+ as the redox shuttle. Blue: OCPVD with TBP; red: OCVD with TBP; dark blue: OCPVD with TBP & Al2O3; brown: OCVD with TBP & Al2O3.
S3
