Fast Recovery Diodes (Stud Version), 200 A SD203N/R Series - Vishay
SD203N/R Series Vishay Semiconductors
Fast Recovery Diodes (Stud Version), 200 A FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time
RoHS
• High voltage ratings up to 2500 V
COMPLIANT
• High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery DO-205AB (DO-9)
• Compression bonded encapsulation • Stud version JEDEC DO-205AB (DO-9) • Maximum junction temperature 125 °C • RoHS compliant • Lead (Pb)-free • Designed and qualified for industrial level
PRODUCT SUMMARY IF(AV)
200 A
TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV)
TEST CONDITIONS
TC
IF(RMS) IFSM
I2 t VRRM trr TJ
Document Number: 93170 Revision: 08-Apr-08
VALUES
UNITS
200
A
85
°C
314 50 Hz
4990
60 Hz
5230
50 Hz
125
60 Hz
114
Range
400 to 2500
V
Range
1.0 to 2.0
µs
TJ
A
kA2s
25 °C - 40 to 125
For technical questions, contact: [email protected]
www.vishay.com 1
SD203N/R Series Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER
VOLTAGE CODE
VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V
VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
20
2000
2100
25
2500
2600
SD203N/R..S10
SD203N/R..S15
SD203N/R..S20
IRRM MAXIMUM TJ = 125 °C mA
35
FORWARD CONDUCTION PARAMETER
SYMBOL
Maximum average forward current at case temperature Maximum RMS current
Maximum peak, one-cycle non-repetitive forward current
IF(AV) IF(RMS)
IFSM
TEST CONDITIONS 180° conduction, half sine wave
314
t = 10 ms
t = 8.3 ms t = 10 ms
Maximum
for fusing
I2t
No voltage reapplied 100 % VRRM reapplied No voltage reapplied
5230
Sinusoidal half wave, initial TJ = TJ maximum
4400 125 114 88
t = 0.1 to 10 ms, no voltage reapplied
1250
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
1.00
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
1.47
Low level value of forward slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
1.10
High level value of forward slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.46
Ipk = 628 A, TJ = 25 °C, tp = 400 µs square pulse
1.65
www.vishay.com 2
VFM
For technical questions, contact: [email protected]
kA2s
81
Low level value of threshold voltage
Maximum forward voltage drop
A
4200
100 % VRRM reapplied
t = 8.3 ms I2t
°C
4990
t = 10 ms I2t
A
85
t = 10 ms t = 8.3 ms
UNITS
200
DC at 76 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
kA2s V
m
V
Document Number: 93170 Revision: 08-Apr-08
SD203N/R Series Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors
RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE
Ipk SQUARE PULSE (A)
trr AT 25 % IRRM ( s)
S10
1.0
S15
1.5
S20
2.0
TYPICAL VALUES AT TJ = 125 °C
TEST CONDITIONS
dI/dt (A/ s)
750
25
Vr (V)
trr AT 25 % IRRM ( s)
Qrr ( C)
Irr (A)
2.4
52
33
2.9
90
44
3.2
107
46
- 30
IFM
trr t
dir dt
Qrr IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER
SYMBOL
Maximum operating temperature range
TEST CONDITIONS
VALUES
TJ
- 40 to 125
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance, junction to case
RthJC
DC operation
0.115
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
UNITS °C
K/W
Not-lubricated threads
Mounting torque ± 10 %
31
Lubricated threads
Nm
24.5
Approximate weight
250
Case style
See dimensions (link at the end of datasheet)
g
DO-205AB (DO-9)
RthJC CONDUCTION CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.010
0.008
120°
0.013
0.014
90°
0.017
0.019
60°
0.025
0.027
30°
0.044
0.044
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 93170 Revision: 08-Apr-08
For technical questions, contact: [email protected]
www.vishay.com 3
SD203N/R Series
Maximum Allowable Case Temperature (°C)
130
SD203N/ RSeries RthJC (DC) = 0.115 K/ W
120 110
Conduction Angle
100 30°
90
60° 90° 120°
80
180° 70 0
40
80
120
160
200
Maximum Average Forward Power Loss (W)
Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors
550 500
400 350 300 250
200 RMS Limit 100
0 0
Conduction Period
100 90
30° 60° 90° 120°
80
180°
DC
70 0
50
100
150
200
250
300
Maximum Average Forward Power Loss (W)
350 180° 120° 90° 60° 30°
250 200
RMS Limit
150 Conduction Angle
100
SD203N/ R Series TJ = 125°C
50 0 0
50
100
150
200
Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics
www.vishay.com 4
5000
100
150
200
250
300
350
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s
4500 4000 3500 3000 2500 2000
SD203N/ R Series
1500 1000
350
Average Forward Current (A) Fig. 2 - Current Ratings Characteristics
300
Peak Half Sine Wave Forward Current (A)
110
50
Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Maximum Allowable Case Temperature (°C)
120
SD203N/ R Series TJ = 125°C
50
Average Forward Current (A) Fig. 1 - Current Ratings Characteristics
SD203N/ R Series RthJC (DC) = 0.115 K/ W
Conduction Period
150
240
130
DC 180° 120° 90° 60° 30°
450
5500 5000 4500 4000
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125 °C No Voltage Reapplied Rated VRRM Reapplied
3500 3000 2500 2000 1500
SD203N/ R Series
1000 0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
For technical questions, contact: [email protected]
Document Number: 93170 Revision: 08-Apr-08
SD203N/R Series Fast Recovery Diodes (Stud Version), 200 A (K/ W)
1 Steady State Value: R thJC = 0.115 K/ W (DC Operation)
thJC
TJ= 25 °C TJ= 125 °C
Transient Thermal Impedance Z
Instantaneous Forward Current (A)
10000
Vishay Semiconductors
1000
SD203N/ R Series
100 .5
2.5
4.5
6.5
0.1
0.01 SD203N/ R Series
0.001 0.001
Instantaneous Forward Voltage (V)
0.01
0.1
1
10
Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - Forward Voltage Drop Characteristics
120 V
FP
Forwa rd Recovery (V)
100
TJ = 125°C
I
80 60 TJ = 25°C 40 SD203N/ R..S20 Series
20 0 0
200
400
600
800
1000
1200
1400
1600
1800
2000
2.8 2.6 2.4
SD203N/ R..S10 Series TJ = 125 °C, V r = 30V I FM = 750 A Square Pulse
2.2 2
400 A
1.8 200 A
1.6 10
100
Rate Of Fall Of Forward Current - di/ dt (A/µs)
Fig. 10 - Recovery Time Characteristics
Document Number: 93170 Revision: 08-Apr-08
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Recovery Time - Trr (µs)
Rate Off Fall Of Forward Current di/ dt (A/ usec) Fig. 9 - Typical Forward Recovery Characteristics
140 I FM = 750 A
130
Square Pulse
120 110 100
400 A
90 80 200 A
70 60 50 40
SD203N/ R..S10 Series TJ= 125 °C, V r = 30V
30 20 10 0
20
40
60
80
100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 11 - Recovery Charge Characteristics
For technical questions, contact: [email protected]
www.vishay.com 5
SD203N/R Series
Maximum Reverse Rec overy Current - Irr (A)
100 I FM = 750 A
90
Square Pulse 400 A
80 200 A
70 60 50 40 30
SD203N/ R..S10 Series TJ = 125 °C, V r = 30V
20 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Current Characteristics
SD203N/ R..S15 Series TJ = 125 °C, V r = 30V 3.2 I FM = 750 A
2.8
Sq uare Pulse
2.4 400 A
2 200 A
1.6 10
I FM = 750 A Squa re Pulse
150 140 130 120
400 A
110 100
200 A
90 80 70 60
SD203N/ R..S15 Series TJ= 125 °C, V r = 30V
50 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/µs)
Fig. 14 - Recovery Charge Characteristics www.vishay.com 6
100 90
400 A
80 70
200 A
60 50 40 30 20
SD203N/ R..S15 Series TJ= 125 °C, Vr = 30V
10 10 20 30 40 50 60 70 80 90 100
3.6 3.4
SD203N/ R..S20 Series TJ= 125 °C, V r = 30V I FM = 750 A
3.2
Square Pulse
3 2.8
400 A 200 A
2.6 2.4 10
100
Fig. 16 - Recovery Time Characteristics
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Recovery Charge - Qrr (µC)
160
Square Pulse
110
Rate Of Fall Of Forward Current - di/d t (A/ µs)
Fig. 13 - Recovery Time Characteristics
170
I FM = 750 A
120
Fig. 15 - Recovery Current Characteristics
100
Rate Of Fa ll Of Forward Current - di/ dt (A/ µs)
130
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Maximum Reverse Recovery Time - Trr (µs)
Maximum Reverse Recovery Time - Trr (µs)
3.6
Maximum Reverse Rec overy Current - Irr (A)
Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors
300 I FM = 750 A
250
Sq ua re Pulse
200
400 A
150
200 A
100
SD203N/ R..S20 Series TJ= 125 °C, V r = 30V
50 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 17 - Recovery Charge Characteristics
For technical questions, contact: [email protected]
Document Number: 93170 Revision: 08-Apr-08
SD203N/R Series
Maximum Reverse Recovery Current - Irr (A)
Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors
130 I FM = 750 A
120
Square Pulse
110 100
400 A
90 80
200 A
70 60 50 40 30
SD203N/ R..S20 Series TJ= 125 °C, V r = 30V
20 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 18 - Recovery Current Characteristics 1E4 20 joules per pulse 20 joules per pulse
10 10 4
Peak Forward Current (A)
4 1
1E3
2 2 1
0.4 0.2 0.1
0.4 0.2
0.04
0.1
0.02
1E2
0.06
0.01 SD203N/ R..S10 Series Sinusoidal Pulse TJ= 125°C, VRRM= 1120V dv/ dt = 1000V/ µs
1E1 1E1
tp
1E2
1E3
1E4
1E1
SD203N/ R..S10 Series Trapezoidal Pulse TJ = 125°C, VRRM = 1120V dv/ dt=1000V/ µs, di/ dt=50A/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 20 joules per p ulse
20 joules per pulse
Peak Forward Current (A)
10
10 4
4 2 2
1
1E3
1
0.4 0.4
0.2 0.1
0.2
0.04 0.02
1E2
0.1
0.01
tp
1E1 1E1
SD203N/ R..S15 Series Sinusoidal Pulse TJ = 125°C, VRRM = 1120V dv/ dt = 1000V/ µs
1E2
tp
1E3
1E4
1E1
SD203N/ R..S15 Series Trapezoidal Pulse TJ= 125°C, VRRM = 1120V d v/ dt=1000V/ µs, di/ dt=50A/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs) Fig. 20 - Maximum Total Energy Loss Per Pulse Characteristics
Document Number: 93170 Revision: 08-Apr-08
For technical questions, contact: [email protected]
www.vishay.com 7
SD203N/R Series Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors 1E4
20 joules per pulse
20 joules per p ulse
Peak Forward Current (A)
10
10
4
4
2
1E3
2
1
1
0.4
0.4
0.2 0.1
1E2
0.2
0.04
tp
SD203N/ R..S20 Series Sinusoidal Pulse TJ= 125°C, VRRM = 1760V dv/ dt = 1000V/ µs
1E1 1E1
0.02 0.01
1E2
tp
1E3
1E4
SD203N/ R..S20 Series Trapezoidal Pulse TJ= 125°C, VRRM = 1760V d v/ dt=1000V/ µs, di/ dt=50A/ µs
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs) Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
ORDERING INFORMATION TABLE
Device code
SD
20
3
R
25
S20
P
B
C
1
2
3
4
5
6
7
8
9
1
-
Diode
2
-
Essential part number
3
-
3 = Fast recovery
4
-
N = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud)
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
trr code (see Recovery Characteristics table)
7
-
P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A M = Stud base DO-205AB (DO-9) M16 x 1.5
8
-7
B = Flag top terminals (for cathode/ anode leads) S = Isolated lead with silicon sleeve (red = Reverse polarity; blue = Normal polarity) None = Not isolated lead
9
-
C = Ceramic housing (over 1600 V) V = Glass-metal seal (only up to 1600 V)
LINKS TO RELATED DOCUMENTS Dimensions
www.vishay.com 8
http://www.vishay.com/doc?95301
For technical questions, contact: [email protected]
Document Number: 93170 Revision: 08-Apr-08
Outline Dimensions Vishay Semiconductors
DO-205AB (DO-9) DIMENSIONS in millimeters (inches) Ceramic housing
19 (0.75) MAX.
4 (0.16) MAX.
39 (1.53) MAX.
9.5 (0.37) MIN.
DIA. 8.5 (0.33) NOM.
C.S. 35 mm2 (0.054 s.i.)
210 (8.27) ± 10 (0.39) DIA. 27.5 (1.08) MAX. 82 (3.23) MIN.
SW 32 16 (0.63) MAX. 21 (0.82) MAX.
3/4"-16UNF-2A*
Document Number: 95301 Revision: 09-Apr-08
*For metric device: M16 x 1.5 contact factory
For technical questions, contact: [email protected]
www.vishay.com 1
Legal Disclaimer Notice www.vishay.com
Vishay
Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
Fast Recovery Diodes (Stud Version), 200 A FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time
RoHS
• High voltage ratings up to 2500 V
COMPLIANT
• High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery DO-205AB (DO-9)
• Compression bonded encapsulation • Stud version JEDEC DO-205AB (DO-9) • Maximum junction temperature 125 °C • RoHS compliant • Lead (Pb)-free • Designed and qualified for industrial level
PRODUCT SUMMARY IF(AV)
200 A
TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV)
TEST CONDITIONS
TC
IF(RMS) IFSM
I2 t VRRM trr TJ
Document Number: 93170 Revision: 08-Apr-08
VALUES
UNITS
200
A
85
°C
314 50 Hz
4990
60 Hz
5230
50 Hz
125
60 Hz
114
Range
400 to 2500
V
Range
1.0 to 2.0
µs
TJ
A
kA2s
25 °C - 40 to 125
For technical questions, contact: [email protected]
www.vishay.com 1
SD203N/R Series Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER
VOLTAGE CODE
VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V
VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
20
2000
2100
25
2500
2600
SD203N/R..S10
SD203N/R..S15
SD203N/R..S20
IRRM MAXIMUM TJ = 125 °C mA
35
FORWARD CONDUCTION PARAMETER
SYMBOL
Maximum average forward current at case temperature Maximum RMS current
Maximum peak, one-cycle non-repetitive forward current
IF(AV) IF(RMS)
IFSM
TEST CONDITIONS 180° conduction, half sine wave
314
t = 10 ms
t = 8.3 ms t = 10 ms
Maximum
for fusing
I2t
No voltage reapplied 100 % VRRM reapplied No voltage reapplied
5230
Sinusoidal half wave, initial TJ = TJ maximum
4400 125 114 88
t = 0.1 to 10 ms, no voltage reapplied
1250
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
1.00
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
1.47
Low level value of forward slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
1.10
High level value of forward slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.46
Ipk = 628 A, TJ = 25 °C, tp = 400 µs square pulse
1.65
www.vishay.com 2
VFM
For technical questions, contact: [email protected]
kA2s
81
Low level value of threshold voltage
Maximum forward voltage drop
A
4200
100 % VRRM reapplied
t = 8.3 ms I2t
°C
4990
t = 10 ms I2t
A
85
t = 10 ms t = 8.3 ms
UNITS
200
DC at 76 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
kA2s V
m
V
Document Number: 93170 Revision: 08-Apr-08
SD203N/R Series Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors
RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE
Ipk SQUARE PULSE (A)
trr AT 25 % IRRM ( s)
S10
1.0
S15
1.5
S20
2.0
TYPICAL VALUES AT TJ = 125 °C
TEST CONDITIONS
dI/dt (A/ s)
750
25
Vr (V)
trr AT 25 % IRRM ( s)
Qrr ( C)
Irr (A)
2.4
52
33
2.9
90
44
3.2
107
46
- 30
IFM
trr t
dir dt
Qrr IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER
SYMBOL
Maximum operating temperature range
TEST CONDITIONS
VALUES
TJ
- 40 to 125
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance, junction to case
RthJC
DC operation
0.115
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
UNITS °C
K/W
Not-lubricated threads
Mounting torque ± 10 %
31
Lubricated threads
Nm
24.5
Approximate weight
250
Case style
See dimensions (link at the end of datasheet)
g
DO-205AB (DO-9)
RthJC CONDUCTION CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.010
0.008
120°
0.013
0.014
90°
0.017
0.019
60°
0.025
0.027
30°
0.044
0.044
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 93170 Revision: 08-Apr-08
For technical questions, contact: [email protected]
www.vishay.com 3
SD203N/R Series
Maximum Allowable Case Temperature (°C)
130
SD203N/ RSeries RthJC (DC) = 0.115 K/ W
120 110
Conduction Angle
100 30°
90
60° 90° 120°
80
180° 70 0
40
80
120
160
200
Maximum Average Forward Power Loss (W)
Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors
550 500
400 350 300 250
200 RMS Limit 100
0 0
Conduction Period
100 90
30° 60° 90° 120°
80
180°
DC
70 0
50
100
150
200
250
300
Maximum Average Forward Power Loss (W)
350 180° 120° 90° 60° 30°
250 200
RMS Limit
150 Conduction Angle
100
SD203N/ R Series TJ = 125°C
50 0 0
50
100
150
200
Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics
www.vishay.com 4
5000
100
150
200
250
300
350
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s
4500 4000 3500 3000 2500 2000
SD203N/ R Series
1500 1000
350
Average Forward Current (A) Fig. 2 - Current Ratings Characteristics
300
Peak Half Sine Wave Forward Current (A)
110
50
Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Maximum Allowable Case Temperature (°C)
120
SD203N/ R Series TJ = 125°C
50
Average Forward Current (A) Fig. 1 - Current Ratings Characteristics
SD203N/ R Series RthJC (DC) = 0.115 K/ W
Conduction Period
150
240
130
DC 180° 120° 90° 60° 30°
450
5500 5000 4500 4000
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125 °C No Voltage Reapplied Rated VRRM Reapplied
3500 3000 2500 2000 1500
SD203N/ R Series
1000 0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
For technical questions, contact: [email protected]
Document Number: 93170 Revision: 08-Apr-08
SD203N/R Series Fast Recovery Diodes (Stud Version), 200 A (K/ W)
1 Steady State Value: R thJC = 0.115 K/ W (DC Operation)
thJC
TJ= 25 °C TJ= 125 °C
Transient Thermal Impedance Z
Instantaneous Forward Current (A)
10000
Vishay Semiconductors
1000
SD203N/ R Series
100 .5
2.5
4.5
6.5
0.1
0.01 SD203N/ R Series
0.001 0.001
Instantaneous Forward Voltage (V)
0.01
0.1
1
10
Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - Forward Voltage Drop Characteristics
120 V
FP
Forwa rd Recovery (V)
100
TJ = 125°C
I
80 60 TJ = 25°C 40 SD203N/ R..S20 Series
20 0 0
200
400
600
800
1000
1200
1400
1600
1800
2000
2.8 2.6 2.4
SD203N/ R..S10 Series TJ = 125 °C, V r = 30V I FM = 750 A Square Pulse
2.2 2
400 A
1.8 200 A
1.6 10
100
Rate Of Fall Of Forward Current - di/ dt (A/µs)
Fig. 10 - Recovery Time Characteristics
Document Number: 93170 Revision: 08-Apr-08
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Recovery Time - Trr (µs)
Rate Off Fall Of Forward Current di/ dt (A/ usec) Fig. 9 - Typical Forward Recovery Characteristics
140 I FM = 750 A
130
Square Pulse
120 110 100
400 A
90 80 200 A
70 60 50 40
SD203N/ R..S10 Series TJ= 125 °C, V r = 30V
30 20 10 0
20
40
60
80
100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 11 - Recovery Charge Characteristics
For technical questions, contact: [email protected]
www.vishay.com 5
SD203N/R Series
Maximum Reverse Rec overy Current - Irr (A)
100 I FM = 750 A
90
Square Pulse 400 A
80 200 A
70 60 50 40 30
SD203N/ R..S10 Series TJ = 125 °C, V r = 30V
20 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Current Characteristics
SD203N/ R..S15 Series TJ = 125 °C, V r = 30V 3.2 I FM = 750 A
2.8
Sq uare Pulse
2.4 400 A
2 200 A
1.6 10
I FM = 750 A Squa re Pulse
150 140 130 120
400 A
110 100
200 A
90 80 70 60
SD203N/ R..S15 Series TJ= 125 °C, V r = 30V
50 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/µs)
Fig. 14 - Recovery Charge Characteristics www.vishay.com 6
100 90
400 A
80 70
200 A
60 50 40 30 20
SD203N/ R..S15 Series TJ= 125 °C, Vr = 30V
10 10 20 30 40 50 60 70 80 90 100
3.6 3.4
SD203N/ R..S20 Series TJ= 125 °C, V r = 30V I FM = 750 A
3.2
Square Pulse
3 2.8
400 A 200 A
2.6 2.4 10
100
Fig. 16 - Recovery Time Characteristics
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Recovery Charge - Qrr (µC)
160
Square Pulse
110
Rate Of Fall Of Forward Current - di/d t (A/ µs)
Fig. 13 - Recovery Time Characteristics
170
I FM = 750 A
120
Fig. 15 - Recovery Current Characteristics
100
Rate Of Fa ll Of Forward Current - di/ dt (A/ µs)
130
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Maximum Reverse Recovery Time - Trr (µs)
Maximum Reverse Recovery Time - Trr (µs)
3.6
Maximum Reverse Rec overy Current - Irr (A)
Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors
300 I FM = 750 A
250
Sq ua re Pulse
200
400 A
150
200 A
100
SD203N/ R..S20 Series TJ= 125 °C, V r = 30V
50 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 17 - Recovery Charge Characteristics
For technical questions, contact: [email protected]
Document Number: 93170 Revision: 08-Apr-08
SD203N/R Series
Maximum Reverse Recovery Current - Irr (A)
Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors
130 I FM = 750 A
120
Square Pulse
110 100
400 A
90 80
200 A
70 60 50 40 30
SD203N/ R..S20 Series TJ= 125 °C, V r = 30V
20 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 18 - Recovery Current Characteristics 1E4 20 joules per pulse 20 joules per pulse
10 10 4
Peak Forward Current (A)
4 1
1E3
2 2 1
0.4 0.2 0.1
0.4 0.2
0.04
0.1
0.02
1E2
0.06
0.01 SD203N/ R..S10 Series Sinusoidal Pulse TJ= 125°C, VRRM= 1120V dv/ dt = 1000V/ µs
1E1 1E1
tp
1E2
1E3
1E4
1E1
SD203N/ R..S10 Series Trapezoidal Pulse TJ = 125°C, VRRM = 1120V dv/ dt=1000V/ µs, di/ dt=50A/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 20 joules per p ulse
20 joules per pulse
Peak Forward Current (A)
10
10 4
4 2 2
1
1E3
1
0.4 0.4
0.2 0.1
0.2
0.04 0.02
1E2
0.1
0.01
tp
1E1 1E1
SD203N/ R..S15 Series Sinusoidal Pulse TJ = 125°C, VRRM = 1120V dv/ dt = 1000V/ µs
1E2
tp
1E3
1E4
1E1
SD203N/ R..S15 Series Trapezoidal Pulse TJ= 125°C, VRRM = 1120V d v/ dt=1000V/ µs, di/ dt=50A/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs) Fig. 20 - Maximum Total Energy Loss Per Pulse Characteristics
Document Number: 93170 Revision: 08-Apr-08
For technical questions, contact: [email protected]
www.vishay.com 7
SD203N/R Series Fast Recovery Diodes (Stud Version), 200 A
Vishay Semiconductors 1E4
20 joules per pulse
20 joules per p ulse
Peak Forward Current (A)
10
10
4
4
2
1E3
2
1
1
0.4
0.4
0.2 0.1
1E2
0.2
0.04
tp
SD203N/ R..S20 Series Sinusoidal Pulse TJ= 125°C, VRRM = 1760V dv/ dt = 1000V/ µs
1E1 1E1
0.02 0.01
1E2
tp
1E3
1E4
SD203N/ R..S20 Series Trapezoidal Pulse TJ= 125°C, VRRM = 1760V d v/ dt=1000V/ µs, di/ dt=50A/ µs
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs) Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
ORDERING INFORMATION TABLE
Device code
SD
20
3
R
25
S20
P
B
C
1
2
3
4
5
6
7
8
9
1
-
Diode
2
-
Essential part number
3
-
3 = Fast recovery
4
-
N = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud)
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
trr code (see Recovery Characteristics table)
7
-
P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A M = Stud base DO-205AB (DO-9) M16 x 1.5
8
-7
B = Flag top terminals (for cathode/ anode leads) S = Isolated lead with silicon sleeve (red = Reverse polarity; blue = Normal polarity) None = Not isolated lead
9
-
C = Ceramic housing (over 1600 V) V = Glass-metal seal (only up to 1600 V)
LINKS TO RELATED DOCUMENTS Dimensions
www.vishay.com 8
http://www.vishay.com/doc?95301
For technical questions, contact: [email protected]
Document Number: 93170 Revision: 08-Apr-08
Outline Dimensions Vishay Semiconductors
DO-205AB (DO-9) DIMENSIONS in millimeters (inches) Ceramic housing
19 (0.75) MAX.
4 (0.16) MAX.
39 (1.53) MAX.
9.5 (0.37) MIN.
DIA. 8.5 (0.33) NOM.
C.S. 35 mm2 (0.054 s.i.)
210 (8.27) ± 10 (0.39) DIA. 27.5 (1.08) MAX. 82 (3.23) MIN.
SW 32 16 (0.63) MAX. 21 (0.82) MAX.
3/4"-16UNF-2A*
Document Number: 95301 Revision: 09-Apr-08
*For metric device: M16 x 1.5 contact factory
For technical questions, contact: [email protected]
www.vishay.com 1
Legal Disclaimer Notice www.vishay.com
Vishay
Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
