High-Resolution p-type Metal Oxide Semiconductor Nanowire Array ...

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Supporting Information

High-Resolution p-type Metal Oxide Semiconductor Nanowire Array as an Ultrasensitive Sensor for Volatile Organic Compounds Soo-Yeon Cho†,‡, Hae-Wook Yoo§, Ju Ye Kim†,‡, Woo-Bin Jung†,‡, Ming Liang Jin†,‡, JongSeon Kim†,‡, Hwan-Jin Jeonǁ, and Hee-Tae Jung*,†,‡ †

Department of Chemical and Biomolecular Engineering (BK-21 Plus), Korea Advanced

Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea ‡

KAIST Institute for Nanocentury, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic

of Korea §

The 4th R&D Institute, Agency for Defense Development, Daejeon 305-600, Republic of

Korea ǁ

Department of Nano-Structured Materials Research, Korea National Nanofab Center,

Daejeon, Korea Corresponding Author *E-mail : [email protected]

Table of contents: 1. Schematic of the entire gas delivery system 2. Comparison table of gas sensing performance based on p-type MOS

Figure S1. Schematic of the overall gas delivery system. Each analyte (toluene, hexane, acetone, and ethanol) and dry air was introduced in a controlled manner into the reaction chamber by using the MFC, tubing system, and multiposition valve. The serial dilution system was also used to obtain 0.1–1000 ppm concentrations of the analyzed gas.

Figure S2. Comparison table of gas sensing performance based on p-type MOS. For both NiO and CuO, our high resolution nanowire array shows much higher response even with 1 ppm of hexane, which is hard to be detected due to non-functionalized molecular structures. In addition, morphological effect of our structure (~5) is significantly higher than that of other reports proving high morphological advantage of our sensor to gas sensing applications.

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