Highly reliable silver nanowire transparent electrode employing
Supporting Information
Highly reliable silver nanowire transparent electrode employing selectively patterned barrier shaped by self-masked photolithography Jun Wang,†,‡ Jinting Jiu,‡,* Tohru Sugahara,‡ Shijo Nagao,‡ Masaya Nogi,‡ Hirotaka Koga,‡ Peng He,†,* Katsuaki Suganuma,‡ and Hiroshi Uchida§ †
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology,
Harbin 150001, China. Email: [email protected] ‡
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka
567-0047, Japan. Email: [email protected] §
Institute for Polymers and Chemicals Business Development Center, Showa Denko K.K.,
Ichihara, Chiba 290-0067, Japan
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Figure S1. The optical transmittance of the glass substrate applied during the photolithography process. The transmittance was 91.2% at 405 nm wavelength.
Figure S2. The surface topography of the photoresist-coated AgNW electrodes after developing for (a) 4.0 s; (b) 8.0 s and (c) 13.0 s. It is notable that the barrier pattern gradually emerged during the developing process. The formation of barrier pattern was proved to be closely related to the developing time. Scale bar = 5 µm.
Figure S3. The morphology comparison between the neighboring areas of pristine AgNWs and the AgNWs coated with barrier pattern, The lower half in the figure was exposed to light while the photoresist film just faced up without turning over, accordingly after developing, only the pristine AgNWs were kept on the lower half substrate. Scale bar = 20 µm.
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Figure S4. The optical transmittance of the photoresist coated AgNW electrodes with different developing time.
Figure S5. The resistances of 5 AgNW electrode samples before and after the photoresist coating with different transmittance from 86.0% to 90.0%. The resistance value after coating little changed compared with the value before coating for each sample. It indicates that the contact resistance between nanowires was barely influenced by the coated photoresist layer.
Table S1. The average resistances of AgNW electrodes before and after the photoresist coating with different transmittance from 86.0% to 90.0%. Transmittance (%) 86.0 87.0 88.0 89.0 90.0
Resistance (Ω) before coating after coating 13.54 13.69 15.07 14.92 15.47 15.45 21.75 21.73 29.05 28.96 S-3
Figure S6. The morphology of AgNW electrodes (a) with patterned barrier and (b) without patterned barrier after fluorescent lamp light exposure in the air for 4 weeks. The color temperature of the lamp was 6700K and the luminous flux was 3310 lm. The distance between the lamp and the electrodes was 30 cm. Scale bar = 2 µm.
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Highly reliable silver nanowire transparent electrode employing selectively patterned barrier shaped by self-masked photolithography Jun Wang,†,‡ Jinting Jiu,‡,* Tohru Sugahara,‡ Shijo Nagao,‡ Masaya Nogi,‡ Hirotaka Koga,‡ Peng He,†,* Katsuaki Suganuma,‡ and Hiroshi Uchida§ †
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology,
Harbin 150001, China. Email: [email protected] ‡
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka
567-0047, Japan. Email: [email protected] §
Institute for Polymers and Chemicals Business Development Center, Showa Denko K.K.,
Ichihara, Chiba 290-0067, Japan
S-1
Figure S1. The optical transmittance of the glass substrate applied during the photolithography process. The transmittance was 91.2% at 405 nm wavelength.
Figure S2. The surface topography of the photoresist-coated AgNW electrodes after developing for (a) 4.0 s; (b) 8.0 s and (c) 13.0 s. It is notable that the barrier pattern gradually emerged during the developing process. The formation of barrier pattern was proved to be closely related to the developing time. Scale bar = 5 µm.
Figure S3. The morphology comparison between the neighboring areas of pristine AgNWs and the AgNWs coated with barrier pattern, The lower half in the figure was exposed to light while the photoresist film just faced up without turning over, accordingly after developing, only the pristine AgNWs were kept on the lower half substrate. Scale bar = 20 µm.
S-2
Figure S4. The optical transmittance of the photoresist coated AgNW electrodes with different developing time.
Figure S5. The resistances of 5 AgNW electrode samples before and after the photoresist coating with different transmittance from 86.0% to 90.0%. The resistance value after coating little changed compared with the value before coating for each sample. It indicates that the contact resistance between nanowires was barely influenced by the coated photoresist layer.
Table S1. The average resistances of AgNW electrodes before and after the photoresist coating with different transmittance from 86.0% to 90.0%. Transmittance (%) 86.0 87.0 88.0 89.0 90.0
Resistance (Ω) before coating after coating 13.54 13.69 15.07 14.92 15.47 15.45 21.75 21.73 29.05 28.96 S-3
Figure S6. The morphology of AgNW electrodes (a) with patterned barrier and (b) without patterned barrier after fluorescent lamp light exposure in the air for 4 weeks. The color temperature of the lamp was 6700K and the luminous flux was 3310 lm. The distance between the lamp and the electrodes was 30 cm. Scale bar = 2 µm.
S-4
