Lancerâ¢Ion Beam Etch System
Stand-alone ion beam etch system with low cost of ownership and highest quality etch attributes
Lancer™ Ion Beam Etch System for Next Generation MEMS and Sensor Manufacturing Superior device quality attainable in R&D and production environments > Best-in-class ion beam etch (IBE) system performance and capabilities > Single module configuration with reduction in footprint compared to previous IBE generations > Production-proven technology with large install base in use today > Large applications database with dedicated process and technical expertise > Veeco sales and service support infrastructure ensuring world class customer satisfaction
The Veeco Ion Beam Etch Advantage Ion beam etching is a proven technology for enabling the fabrication of advanced thin film devices in a high volume production environment. However, both R&D and pilot line production environments continue to innovate next generation MEMS, Magnetic Sensors and Data Storage devices that also rely on high performing etch systems with best-in-industry performance specifications.
Lancer IBE Configuration Options: > Front End/Substrate Handling Configurations:
• Automated Single wafer loader • Automated 25 wafer cassette loader
Key Attributes of Ion Beam Etching (IBE): > Material flexibility
• Can etch any material - no chemistry dependence • Production proven method for etching complex materials and structures
> Shape control
• Directional beam with etch angle control for device shape / wall
angle control • Veeco-developed high collimation source > Low ion damage • Low energy capability (down to 50V) > Independent beam current and voltage control > Isolation of source from substrate
Automated cassette loader
Single wafer loader
> Ion Source Options:
• Standard RF-350 (RF-ICP) • Tunable 350EX
Applications flexibility: > Piezoelectric and electrode etching for RF MEMS (SAW/BAW/FBAR) > Complex magnetic stacks with mixed metal-dielectric materials (AMR, GMR, TMR/ MRAM) > Reactive etching capability for III/V materials (HEMT transistors, power electronics) > Off-angle ion beam smoothing > Low energy etch for reducing magnetic damage of devices > General noble metals and materials often difficult to etch and control with traditional dry etch techniques
RF350EX Tunable ion Source
RF350 Standard ion source
> End Point Detection (EPD) Capability:
• Optical emission spectroscopy (OES) • Secondary Ion Mass Spectrometer (SIMS) • Integration with Veeco software
Patented 350EX Tunable Source for high performance etching and milling: > Improved Etch Depth Control (unmatched 200mm U%) > Low Magnetic Damage (stable energy down to 50eV) > Improved CD Uniformity (highly collimated beam, Additional U% tuning knob > Ability to adjust U% with grid life(extends MTBM for grids) > 2-5x improvement in U% at 200mm over the standard RF350 source > Ability to ‘tune’ etch profile to compensate for concave/convex deposition profiles > Typical performance •
Lancer™ Ion Beam Etch System for Next Generation MEMS and Sensor Manufacturing Superior device quality attainable in R&D and production environments > Best-in-class ion beam etch (IBE) system performance and capabilities > Single module configuration with reduction in footprint compared to previous IBE generations > Production-proven technology with large install base in use today > Large applications database with dedicated process and technical expertise > Veeco sales and service support infrastructure ensuring world class customer satisfaction
The Veeco Ion Beam Etch Advantage Ion beam etching is a proven technology for enabling the fabrication of advanced thin film devices in a high volume production environment. However, both R&D and pilot line production environments continue to innovate next generation MEMS, Magnetic Sensors and Data Storage devices that also rely on high performing etch systems with best-in-industry performance specifications.
Lancer IBE Configuration Options: > Front End/Substrate Handling Configurations:
• Automated Single wafer loader • Automated 25 wafer cassette loader
Key Attributes of Ion Beam Etching (IBE): > Material flexibility
• Can etch any material - no chemistry dependence • Production proven method for etching complex materials and structures
> Shape control
• Directional beam with etch angle control for device shape / wall
angle control • Veeco-developed high collimation source > Low ion damage • Low energy capability (down to 50V) > Independent beam current and voltage control > Isolation of source from substrate
Automated cassette loader
Single wafer loader
> Ion Source Options:
• Standard RF-350 (RF-ICP) • Tunable 350EX
Applications flexibility: > Piezoelectric and electrode etching for RF MEMS (SAW/BAW/FBAR) > Complex magnetic stacks with mixed metal-dielectric materials (AMR, GMR, TMR/ MRAM) > Reactive etching capability for III/V materials (HEMT transistors, power electronics) > Off-angle ion beam smoothing > Low energy etch for reducing magnetic damage of devices > General noble metals and materials often difficult to etch and control with traditional dry etch techniques
RF350EX Tunable ion Source
RF350 Standard ion source
> End Point Detection (EPD) Capability:
• Optical emission spectroscopy (OES) • Secondary Ion Mass Spectrometer (SIMS) • Integration with Veeco software
Patented 350EX Tunable Source for high performance etching and milling: > Improved Etch Depth Control (unmatched 200mm U%) > Low Magnetic Damage (stable energy down to 50eV) > Improved CD Uniformity (highly collimated beam, Additional U% tuning knob > Ability to adjust U% with grid life(extends MTBM for grids) > 2-5x improvement in U% at 200mm over the standard RF350 source > Ability to ‘tune’ etch profile to compensate for concave/convex deposition profiles > Typical performance •
