Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical ...
Supporting Information for
Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy Leith Samad1, Sage M. Bladow1, Qi Ding1, Junqiao Zhuo1, Robert M. Jacobberger2, Michael S. Arnold2, Song Jin1 1
Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States 2
Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, Wisconsin 53706, United States
AUTHOR EMAIL ADDRESS: [email protected]
S1
ADDITIONAL FIGURES AND DISCUSSION
Figure S1. a, c) Representative AFM images of SnS2 single-crystal plates with b, d) corresponding height profiles demonstrating plate thicknesses ranging from ~100 nm to >1 µm.
S2
Figure S2. a) HRTEM cross-section of the uncoated side of an SnS2 plate; b) Intensity histogram of the first 10 layers of the sample with consistent layer spacing of 0.58 nm representative of SnS2; c) Fast Fourier transform demonstrating alignment of the sample along the SnS2 [100] zone axis. Cross-sectional high resolution TEM on the uncoated side of a MoS2-SnS2 heterostructure was used to confirm the validity of this technique for measuring the difference in layer spacing of a single monolayer growth in a van der Waals epitaxial heterostructure. Measurement of the uncoated underside of a SnS2 plate from a MoS2-SnS2 heterostructure demonstrates that, in contrast to the top layer where MoS2-SnS2 heterostructure is found (see Figure 3 in the main text), the outermost layer of the SnS2 retains the same layer separation observed in the bulk of the plate.
S3
Table S1. Detailed reaction conditions resulting in layer controlled growth of MoS2 layers with the necessary inclusion of humidity as a reaction parameter required to fully regulate MoCl5 precursor partial pressure.
Humidity 44.10% 44.10% 28.50%
Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy Leith Samad1, Sage M. Bladow1, Qi Ding1, Junqiao Zhuo1, Robert M. Jacobberger2, Michael S. Arnold2, Song Jin1 1
Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States 2
Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, Wisconsin 53706, United States
AUTHOR EMAIL ADDRESS: [email protected]
S1
ADDITIONAL FIGURES AND DISCUSSION
Figure S1. a, c) Representative AFM images of SnS2 single-crystal plates with b, d) corresponding height profiles demonstrating plate thicknesses ranging from ~100 nm to >1 µm.
S2
Figure S2. a) HRTEM cross-section of the uncoated side of an SnS2 plate; b) Intensity histogram of the first 10 layers of the sample with consistent layer spacing of 0.58 nm representative of SnS2; c) Fast Fourier transform demonstrating alignment of the sample along the SnS2 [100] zone axis. Cross-sectional high resolution TEM on the uncoated side of a MoS2-SnS2 heterostructure was used to confirm the validity of this technique for measuring the difference in layer spacing of a single monolayer growth in a van der Waals epitaxial heterostructure. Measurement of the uncoated underside of a SnS2 plate from a MoS2-SnS2 heterostructure demonstrates that, in contrast to the top layer where MoS2-SnS2 heterostructure is found (see Figure 3 in the main text), the outermost layer of the SnS2 retains the same layer separation observed in the bulk of the plate.
S3
Table S1. Detailed reaction conditions resulting in layer controlled growth of MoS2 layers with the necessary inclusion of humidity as a reaction parameter required to fully regulate MoCl5 precursor partial pressure.
Humidity 44.10% 44.10% 28.50%
