New Concepts in Nitride Light-emitting Diodes ... - Cornell Engineering
Speaker: Henryk
Turski
New Concepts in Nitride Light-emitting Diodes and Laser Diodes Abstract: Group III-Nitride semiconductor quantum heterostruc
tures have revolutionized visible lighting, enabling efficiencies far beyond those achievable using other material systems. This has been recognized through Isamu Akasaki, Hiroshi Amano and Shuji Nakamura’s Nobel Prize in 2014 "for the invention of efficient blue light-emitting diodes which have enabled bright and energy-saving white light sources". Even though nitride lightemitting diodes (LEDs) and laser diodes (LDs) are now commercially mature, they still exhibit several physical effects that are poorly understood. Furthermore, producing efficient light emitters in the UV, green, and longer wavelength regime remains challenging. Our research focuses on using Molecular Beam Epitaxy (MBE) to facilitate novel growth techniques for nitride-based light emitters. Due to much lower growth temperatures, a high vacuum environment and a lack of Hydrogen introduced during the growth process, MBE offers tempting advantages, especially in the growth of tunnel junctions, over its greatest and most successful competitor: Metal-Organic Vapor Phase Epitaxy (MOVPE). However, to fully exploit those advantages and to grow heterostructures with comparable quality to those obtained by MOVPE, precise control of growth conditions is extremely essential. In this talk, I will present progress in the design and growth of light-emitting diode and laser diode structures emitting in the visible wavelength range by MBE. Unique applications for MBE grown devices and future directions for further development will be discussed. Biography: Henryk Turski is a Postdoc associate in Prof. Debdeep Jena and Prof. Huili Xing’s group at Cornell University. He got his MSc in Physics at the University of Warsaw and his PhD in Physics at the Institute of High Pressure Physics (UNIPRESS) in Warsaw, Poland. His research interests include MBE growth and characterization of III-nitride structures with a main focus on light emitters.
Date: September 29, 2017 (Friday) Time: Refreshment at 12:00pm Talk begins at 12:15 pm Place: Phillips 233 Sponsored by: School of ECE, Cornell University and partially funded by GPSAFC Open to all students, faculty, and staff.
To Learn More: https://orgsync.rso.cornell.edu/org/eds To join the mailing list, send an email to [email protected] with no subject and type in “join” (without quotes) as the body of your message.
Turski
New Concepts in Nitride Light-emitting Diodes and Laser Diodes Abstract: Group III-Nitride semiconductor quantum heterostruc
tures have revolutionized visible lighting, enabling efficiencies far beyond those achievable using other material systems. This has been recognized through Isamu Akasaki, Hiroshi Amano and Shuji Nakamura’s Nobel Prize in 2014 "for the invention of efficient blue light-emitting diodes which have enabled bright and energy-saving white light sources". Even though nitride lightemitting diodes (LEDs) and laser diodes (LDs) are now commercially mature, they still exhibit several physical effects that are poorly understood. Furthermore, producing efficient light emitters in the UV, green, and longer wavelength regime remains challenging. Our research focuses on using Molecular Beam Epitaxy (MBE) to facilitate novel growth techniques for nitride-based light emitters. Due to much lower growth temperatures, a high vacuum environment and a lack of Hydrogen introduced during the growth process, MBE offers tempting advantages, especially in the growth of tunnel junctions, over its greatest and most successful competitor: Metal-Organic Vapor Phase Epitaxy (MOVPE). However, to fully exploit those advantages and to grow heterostructures with comparable quality to those obtained by MOVPE, precise control of growth conditions is extremely essential. In this talk, I will present progress in the design and growth of light-emitting diode and laser diode structures emitting in the visible wavelength range by MBE. Unique applications for MBE grown devices and future directions for further development will be discussed. Biography: Henryk Turski is a Postdoc associate in Prof. Debdeep Jena and Prof. Huili Xing’s group at Cornell University. He got his MSc in Physics at the University of Warsaw and his PhD in Physics at the Institute of High Pressure Physics (UNIPRESS) in Warsaw, Poland. His research interests include MBE growth and characterization of III-nitride structures with a main focus on light emitters.
Date: September 29, 2017 (Friday) Time: Refreshment at 12:00pm Talk begins at 12:15 pm Place: Phillips 233 Sponsored by: School of ECE, Cornell University and partially funded by GPSAFC Open to all students, faculty, and staff.
To Learn More: https://orgsync.rso.cornell.edu/org/eds To join the mailing list, send an email to [email protected] with no subject and type in “join” (without quotes) as the body of your message.
