newproMOSFET BASE

ET191

FUJI POWER TRANSISTOR

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING

Outline Drawings TO-3P

Features High D.C. current gain High reliability

Applications Switching regulators General purpose power amplifiers JEDEC EIAJ

種 機

Maximum ratings and characteristic

Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Collector-Emitter voltage Emitterr-Base voltage Collector current Base current Collector power disspation Operating junction temperature Storage temperature

Symbol VCBO VCEO VCEO(SUS) VEBO IC IB PC Tj Tstg

Rating 600 600 450 6 12 1 100 +150 -55 to +150

型 廃 Di

. t c u

Unit V V V V A A W °C °C

d

e u n i

t

n o c s

SC-65

d o r p

Electrical characteristics (Tc =25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time

Symbol VCBO VCEO VCEO(SUS) VEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) ton tstg tf

Test Conditions ICBO = 1mA ICEO = 1mA IC = 1A IEBO = 200mA VCBO = 600V VEBO = 6V IC = 12A, VCE = 5V IC = 12A, IB = 240mA

Min.

Typ.

Max.

Units

1.0 200

V V V V mA mA

2.0 2.2 1.5 10 2.0

V V µs µs µs

Max.

Units

1.25

°C/W

600 600 450 6

100

IC = 12A, IB1 = 240mA IB2 = -240mA, RL = 20Ω Pw = 20 µs Duty=