NSD

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Surface Mount Schottky Barrier Rectifier Diode

NSD Series

FEATURES • • • • •

VOLTAGE: 20 TO 100 VOLTS, CURRENT: 1.0 & 2.0 AMPERE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS FAST RESPONSE AND LOW FORWARD VOLTAGE HIGH TEMPERATURE SOLDERING (250OC/10 SECONDS) EASY PICK AND PLACE

RoHS Compliant

includes all homogeneous materials *See Part Number System for Details CATHODE 1.25~1.45

2.54~2.79

MECHANICAL DATA: SIZE: SMA/DO-214AC CASE: Molded epoxy TERMINALS: Solder plated Copper alloy POLARITY: Indicated by cathode band STANDARD PACKAGING: 12mm tape (EIA-RS-481) WEIGHT: 0.064 gram

3.99~4.50

4.93~5.28

1.98~2.29 .8~1.3 0.76~1.27

PART NUMBERING SYSTEM

0.1~0.2

NSD 14 TR 5K F

Dimensions (millimeters)

RoHS Compliant Reel qty: (5K & 7.5K) Tape and Reel Voltage & Current Designator (See ratings tables) Series

MAXIMUM RATINGS (At TA=250C unless otherwise noted) Ratings Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3ms single half sine-wave supreimposed on rated load (JEDEC method)

Symbol VRRM VRMS VDC Io

NSD12 NSD13 NSD14 NSD15 NSD16 NSD18 NSD19 NSD100 UNITS 20 30 40 50 60 80 90 100 Volts 14 21 28 35 42 56 64 71 Volts 20 30 40 50 60 80 90 100 Volts

IFSM (Note 2) RqJL CJ TJ, TSTG TRR

Maximum Thermal Resistance Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range Typical Reverse Recovery Time

110

1.0

Amps

30

Amps

25

°C/W

80 -55 ~ +150 15

70

pF °C nS

ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted) Characteristics Maximum Forward Voltage at 1.0A DC @TA=25°C Maximum DC Reverse Current at Rated DC Blocking Voltage (Note 3) @TA=100°C

NOTES:

Symbol VF IR

NSD12

NSD13 0.50

NSD14

NSD15 NSD16 0.65 0.5 10.0

NSD18 NSD19 NSD100 UNITS 0.85 Volts

mAmps mAmps

1. Measured at 1.0MHz and applied average voltage of 4.0VDC. 2. Thermal resistance junction to terminal, 5mm2 (0.013 mm Thick) copper land patterns. 3. Pulse width 300uS, 2% duty cycle.

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1

Surface Mount Schottky Barrier Rectifier Diode

NSD Series

RATING AND CHARACTERISTIC CURVES (NSD12 THRU NSD100) FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

1.0

50

.8 NSD15, 16

.6 NSD12~14

.4 Single Phase Half Wave 60Hz Resistive or Inductive Load

.2 0

PEAK FORWARD SURGE CURRENT, (A)

AVERAGE FORWARD RECTIFIED CURRENT, (A)

FIG. 1 - FORWARD CURRENT DERATING CURVE

8.3ms Single Half Sine-Wave (JEDEC Method) TJ=125OC

40 30 20 10 0

0

25

50

75

100

125

150

175

O

AMBIENT TEMPERATURE, ( C)

1

2

4

6

8

10

20

40

60

80

100

NUMBER OF CYCLES AT 60Hz

®

2

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Surface Mount Schottky Barrier Rectifier Diode

NSD Series

MAXIMUM RATINGS (At TA=250C unless otherwise noted) Ratings

Symbol

NSD22

NSD23

NSD24

NSD25

Maximum Recurrent Peak Reverse Voltage

VRRM

20

30

40

Maximum RMS Voltage

VRMS

14

21

28

Maximum DC Blocking Voltage

VDC

20

30

40

Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)

lo

2.0

Amps

IFSM

50

Amps

75.0 17.0

Typical Junction Capacitance (Note 1)

Rth-JA Rth-JL CJ

220

180

Operating and Storage Temperature Range

TJ/TSTG

-65 to +125/-65 to +150

-65 to +150

Typical Thermal Resistance

NSD26

UNITS

50

60

Volts

35

42

Volts

50

60

Volts

o

C/W pF o

C

ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted) Characteristics

Symbol

Maximum Forward Voltage at 2.0A DC

VF

Maximum DC Reverse Current at

@TA=25°C

Rated DC Blocking Voltage

@TA=100oC

NSD22

NSD23

NSD24

NSD25

0.50

NSD26

UNITS

0.70

Volts

0.5

IR

mAmps

20.0

10.0

mAmps

NOTE: 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC. Fig. 1 - Derated Curve for Output Rectifier Current Average Forward Current Amperes

2.0

Fig. 2 - Typcial Junction Capacitance 500

Resistive or Inductive Load

TJ=25°C f=1.0MHz Vsig=50mV p-p

1.5 NSD22 ~ NSD24

NSD22 & NSD24

100

1.0

0.5

NSD22 ~ NSD24 NSD25 ~ NSD26

PCB Mounted on 0.2x0.2”(5.0x5.0mm) Copper Pad Areas

10 0.1

1.0

10

100

Reverse Voltage, Volts

0 50 60 70 80 90 100 110 120 130 140 150 160

Lead Temperature,°C

Fig. 3 - Typical Reverse Current Characteristics Peak Forward Surge Current Amperes

Fig. 4 - Maximum Non-Repetive Peak Forward Surge Current

100

TA=125°C

CJ, Capacitnce, pF

10

1

TA=75°C

0.1

50

8.3ms Single Half Sine-Wave (JEDEC Method) at Rated TL

40

Fig. 5 - Typical Instantaneous Forward Characteristics 100

10

30

Pulse Width=300µS 1% Duty Cycle

20 TJ=125°C

10 0

TJ=25°C

1 1

10

TJ=150°C

100

Number of Cycles at 60Hz TA=25°C

0.01

0.001

0.1

Percentage of Rated Peak Reverse Voltage, %

0.01

0.2

0.4

0.6 0.8

1.0

1.2 1.4 1.6

Instantanesous Forward Voltage, Volts

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Surface Mount Schottky Barrier Rectifier Diode

NSD Series

MAXIMUM RATINGS (At TA=250C unless otherwise noted) Ratings

Symbol

NSD32

NSD33

NSD34

NSD35

NSD36

UNITS

Maximum Recurrent Peak Reverse Voltage

VRRM

20

30

40

50

60

Volts

Maximum RMS Voltage

VRMS

14

21

28

35

42

Volts

Maximum DC Blocking Voltage

VDC

20

30

40

50

60

Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)

lo

3.0

Amps

IFSM

80

Amps

55.0 17.0

Typical Junction Capacitance (Note 1)

Rth-JA Rth-JL CJ

Operating and Storage Temperature Range

TJ/TSTG

Typical Thermal Resistance

Volts

o

C/W pF

-55 to +125/-55 to +150

o

-55 to +150

C

ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted) Characteristics

Symbol

Maximum Forward Voltage at 3.0A DC

NSD32

NSD33

VF

Maximum DC Reverse Current at

@TA=25°C

Rated DC Blocking Voltage

@TA=100oC

NSD34

NSD35

0.50

NSD36

UNITS

0.60

Volts

0.5

IR

mAmps

20.0

10.0

mAmps

NOTE: 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC.

Resistive or Inductive Load

3.0

NSD35~ NSD36

2.5

NSD32 ~ NSD34

2.0 1.5

PCB Mounted on 0.55 x 0.55” (14 x 14mm) Copper Pad Areas

1.0 0.5 0

Fig. 3 - Typcial Junction Capacitance

Fig. 2 - Maximum Non-Repetive Peak Forward Surge Current

Peak Forward Surge Current Amperes

Average Forward Current Amperes

Fig. 1 - Derated Curve for Output Rectifier Current

100

1000

80 60 40

100

20 0

1

10

100 NSD32 ~ NSD34 NSD35 ~ NSD36

Number of Cycles at 60Hz

50 60 70 80 90 100 110 120 130 140 150 160

10

Lead Temperature,°C

0.1

20 10

TJ = 125°C

TA=125°C

CJ, Capacitnce, pF

Pulse Width=300µS 1% Duty Cycle

TJ = 25°C

1

0.1

NSD32 ~ NSD34 NSD35 ~ NSD36

1

TA=75°C

0.1

10

100

Fig. 6 - Maximum Non-Repetive Peak Forward Surge Current 100

10

1

0.01 0.01

0.1

1

10

100

t1 Pulse Duraton, sec.

0.01

0.01

TA=25°C

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Instantanesous Forward Voltage, Volts

Tanscient Theral Impedance, °CW

Fig. 5 - Typical Reverse Current Characteristics

30

TJ = 150°C

1.0

Reverse Voltage, Volts

Fig. 4 - Typical Instantaneous Forward Characteristics

10

TJ=25°C f=1.0MHz Vsig=50mV p-p

At Rated TL 8.3ms Single Half Sine-wave (JEDEC Method)

NSD32 ~ NSD34 NSD35 ~ NSD36

0.001

Percentage of Rated Peak Reverse Voltage, %

®

4

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Surface Mount Diodes

NRD And NSD Series

TAPING AND MOUNTING SPECIFICATIONS P0 P1

B

W

F

E

d

P

A

D1 D1 T C D

W1

RECOMMENDED LAND PATTERN REEL QUANTITIES Reel Size

Dimensions

(mm)

A

1.2-1.8

B

Reel Quantity

13 inch (330mm)

5,000 & 7,500 pcs

A

C

A

B

1.5-2.2

C

2.7 max.

Item

Symbol

Specifications (mm)

Specifications (inch)

Carrier Width

A

3.2 max.

.126 max.

Carrier Length

B

7.8 max.

.307 max.

Carrier Depth

C

4.5 max.

.177 max.

Sprocket Hole

d

1.5 ± 0.1

.059 ± .004

Reel Outside Diameter

D

178 ± 2.0

7.00 ± .079

Reel Inner Diameter

D1

50 min.

1.969 min.

Feed Hole Diameter

D2

13.0 ± 0.5

.512 ± .020

Sprocket Hole Position

E

1.75 ± 0.1

.069 ± .004

Punch Hole Position

F

5.5 ± 0.1

.217 ± .004

Punch Hole Pitch

P

4.0 ± 0.1

.157 ± .004

Sprocket Hole Pitch

P0

4.0 ± 0.1

.157 ± .004

Embossment Center

P1

2.0 ± 0.05

.079 ± .002

Overall Tape Thickness

T

1.1 max.

.043 max.

Tape Width

W

12.0 ± 0.3

.472 ± .012

Reel Width

W1

18.4 max.

.724 max.

NOTE: Devices are packed in accordance with EIA standard RS-481-A and specifications given above.

®

NIC COMPONENTS

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www.RFpassives.com

5