Organosilicon & Metal-organic Precursors for
Meeting the design challenges posed by systems and components for: • Metallization • Dielectrics • Lithography • Encapsulation & Die Attach Adhesives • OLEDs, LEDs, PLEDs, Phosphorescents, Electrochromics © 2013 Gelest, Inc.
Microelectronics & Optoelectronics
Enabling Molecular Advances in Microelectronics & Optoelectronics Organosilicon and Metal-Organic Precursors
Microelectronics METALLIZATION Gelest offers precursor materials for metallization applications derived from Group III & IV elements (Si, Al, Ti, Ta, W, In, Sb, Ge) used to create conductive coatings on silicon, germanium, silicon carbide, sapphire and plastic substrates. These precursors are suitable for various deposition techniques such as ALD, CVD, MOCVD and PECVD. OC2H5 (CH3)3C C2H5O
C O
OC2H5
W
OC2H5
C2H5O
Cu 2
HC C O
(CH3)3C
AKT890
AKC252.8
AKC262
(CH3)2N
N(CH 3)2 As
AlH3 . (CH3)2NCH 2CH3
AlH3 . (CH3)3N
OMAL005
OMAL008
N(CH 3)22
OMRU027
OMAS080
Strained Silicon – Silicon sources such as monochlorosilane, dichlorosilane, 1MS, 2MS, 3MS, 4MS and Germanium sources such as germane, t-butylgermane, germanium tetrachloride and other analogs are used in production of strained silicon using metal organic vapor phase epitaxy (MOVPE) to improve chip performance and lower energy consumption.
SiGe Precursors Ge
Ge CH3
GEG5001
H
H
C2H5
CH3
CH3
CH3
C2H5
H
GET7550
H Ge
GED3410
Ge H
CH3CH2
Ge
CH3 Cl
H
CH3 Ge
H
H
GED3450
Si Cl
CH3 Cl
GEE4695
GET8561
H
H CH3CH2CH2CH2
H
H
H
(CH3)3C
Ge H
Ge H
GeTe
GeSe 2
GEG5480
GEG5350
H
H
GEB1969.5
GEB1970
Barrier Layers – Group IV material are used to reduce electromigration and other effects that Cu and Al have on Si and SiO2 insulator properties and adhesion, while reducing metal corrosion.Typical deposition methods include PVD, CVD and MOCVD.
Tantalum
Cobalt
Titanium
O O N Co C O
(CH3CH2)2N
C
Ta
Ti
NC(CH 3)3
(CH3CH2)2N
O
(CH3)3C HC C O
AKC240
Co 3
(CH3)2N (CH3)2N
Ta
N(CH 3)2 N(CH 3)2
OMTA075
N(CH 3)2 (CH3)2N
Si CH3
Br Br
Ta
OMTI088
CH3CH2
Br Br Br
INTA070
CH3 N
H3C CH3CH2
Ti N(CH 3)2 N(CH 3)2
4
SIT8008.0
N(CH 3)2
C O
CH3 Si
N CH3
OMTA082
INCO032
(CH3)3C
CH3
(CH3CH2)2N
C
CH2CH3
N Ti N N H3C
CH3
CH2CH3
OMTI083
DIELECTRICS Gelest has developed patented “chloride-free” chemical process technology to commercially produce Group IV materials for use as gate dielectrics and ILD (inter-layer dielectrics). Typical Group IV materials for gate dielectrics are compounds of Hf, Zr, and rare earths such as Ce, La, Pr. Typical ILD precursors are Si based. In addition, Si based materials will play a critical role in future generations of porous dielectric materials that will require improved adhesion, mechanical and thermal properties. Gate Dielectrics (High-K) Porous ULK dielectrics will require the use of CAPS.
Zirconium
Hafnium
CH3 O CH2 CH3 H3C C O H3C
H3C O H2C
C O Hf
H3C
O
CH3 CH2 O CH3
N(CH 2CH3)2
AKH326
H3C
Hf N(CH 2CH3)2
Hf
(CH3 ) 2N
C O
OiC3H7 Zr 2 OiC3H7
AKZ948
N(CH 3)2 (CH3)2N
C2H5
N
C2H5
Zr N(CH 3)2 N(CH 3)2
CH3
TDMAZ OMZR080
OMHF083
OMHF080
OMHF075
(CH3)3C
CH3
N Hf N
H3C
N(CH 3 ) 2
OtC4H9
C2H5 N
C2H5
N(CH 3 ) 2
C O HC
AKZ946
AKH333
(CH3 ) 2N
N(CH 2CH3)2
tC4H9O
OtC4H9
tC4H9O
(CH3)3C
OtC4H9 Zr
Hf
C CH2 O CH3 CH3
C
tC4H9O
OtC4H9
CH3
O H3C
(CH3CH2)2N
tC4H9O
Inter-Layer Dielectrics (Low-K) Thin Film
Pore Sealing & CAPS CH3 H
CH3 H Si CH3
H Si
CH3
1MS SIM6515.0
3MS SIT8570.0
N
CH3
CH3 Si H
CH3
CH3
CH3
TSP SIT8709.8
TMDZ SIT7542.0
Porous Films & Porogens (MeO) 3SiCH2CH2 CH2CH2Si(OMe) 3
CH3
O
CH3COCH 2CH2Si
O
Cl
N Si
CH3
CH3
SID3605.0
SID4125.0 OEt
OCH 3
CH3COCH 2CH2Si
EtO
OCH 3
SIA0010.0
SIA0030.0
OEt
SiCH2Si OEt OEt
OCH 3
CH3
SIB1831.0
SIT8185.0
CH3
OEt
SIB1821.0
SIB1817.0
Etch-Stop Layers CH3
CH3
H Si CH3 CH3
SID4595.0
SID4593.0
1MS SIM6515.0
2MS SID4230.0
CH3
3MS SIT8570.0
SiO2 Source H3C
CH3 C
H3C
O Si
H3C
O C
H3C
SIM6560.0
CH3
O O C CH3
C2H5O
O C
C2H5O
OC2H5 Si
CH3
OC2H5
O
DABS SID2790.0
SIP6822.0
CH3 Si CH3
TEOS SIT7110.2
4MS SIT7555.0
MEMS, NEMS, SAMs SAMs (Self-Assembled Monolayers) – Group IV materials can be applied neat or in solution via conventional lithography techniques to form SAMs. SAM is a layer of amphiphilic molecules created by the chemisorption onto a metal oxide, precious metal surface, plastic or nanoparticle substrates, followed by the 2-dimensional alignment of hydrophobic groups to form a structures single monolayer. The surface can be selectively modified to achieve the desired antisticktion, mechanical and chemical properties for microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS).
Metal Oxides SiCl 3
Cl CF3(CF2)7CH2CH2
Si Cl
SIA0200.0
SIA0540.0
SIB0991.0
SIA0591.0
Cl
CH3 CH3 O (CH2 CH2 O)
6-9
CF3CF2CF2CF2CF2CF2CH2CH2SiCl
(CH2 )3 Si OCH3
Cl
CH3
SIM6476.0
SIH5841.0 O HCCH 2CH2CH2Si(OC2H5)3
SIT8185.3
SIT8174.0
SIM6492.7
Gold, Silicon, Titanium Surfaces CH3(CH2)16CH2 Si H
H
CH3(CH2)10CH2Si
H
H
EPITAXY
H
H
H CF3CF2CF2CF2CF2CF2CH 2CH 2Si
SIO6635.0
SIT8173.0
SID4629.6
H
Volatile Carbosilanes and Higher Polysilanes – the preeminent precursors for: • Amorphous Silicon • SiCO:H films for low-k, barrier layers and etch-stop • Silicon Carbide films and buffer layers • ALD promoted patterning and seed layers • Carbon-doped (Tensile-Strained) Silicon • Silicon Carbonitride passivation
Carbosilanes
SIM6515.0 1MS
SID4593.0
SID4230.0
SID4595.0
SIT8709.3
SIT8709.8
SID4592.0
SIT8715.9
Volatile Higher Silanes
SII6463.4
SIN6597.07
SIT7880.0
SIT8709.6
H
Cl
Optoelectronics LEDs (Organic, Polymer, Phosphorescent) Group IV materials are utilized to modify a variety of surfaces that include glass, metal oxides, plastics and nano-crystals. Plastic substrates are critical in the manufacture of flexible electronic displays. Gelest offers a multitude of materials for metallization via low temperature vapor deposition techniques such as CVD and ALD to yield conductive coatings and dielectric coatings for light emitting diodes to include OLEDs, PLEDs and Phosphorescent OLEDs. The ability to customize the refractive index of Group IV materials makes them ideal candidates for cladding fiber optic cables and planar wave-guides. Gelest offers an extensive range of materials for antireflective and refractive index coatings.
Conductive Coatings
Dielectric Coatings CH3
H3C CH3
SNB2000
H3C
C
O
CH3
CH3
H3C
O Sn O C CH3
CH3
SNT7560
CH3
O
H3C
OLED Triplet Emitters
Si(OC 2H 5)3
C CH3 CH3
SIT8088.0
SNT7064
O CH2
CH3
CH3
SIO6640.0
O
C O Si OH
CH3CH2
H3C C CH3
C CH3
H3C
CH3
C O Si OH
Cl
H3C C CH3
O
CH3
CH3
O
CH3(CH2)16CH2 Si Cl
CH2
H3C C CH3
C CH3
Cl
CH3
CH3
SIB0992.0
SIT8627.0
Optical Dopants Cl
O
CH3CH2 N N O
3
-
N
N O
+3
Al
2
-
Zn
AKA067
O
+2
3
-
H3 C
+3
AKA036
Ge
CH3
C2H5O
O
OC2 H5
CH2CH3
GET7100
OMRU018
O CH2CH3 B
OC2 H5
Cl
Al
AKZ933.8
N Ru 3
C2 H5O
AKB156.2
Chromophoric and Phosphorescent Materials
N
N N
CH3
N
Cu
N
N N
N
N
O
3
-
O +2 H3C C O Cd 2
O
+3
Si N
CH3
H3 C
Si
CH3
Ce
N 3
-
Ga
Al
H3 C +3
CH3
AKC261
AKA067
CXCD010
SIB1871.0
AKG308
(CH3 ) 3 C S
N O
Er
+3
AKE276
Eu
HC
3
-
C O
CF3
AKE286.5
C O
AKE297
3
(CH3 ) 3 C
(CH3 ) 3 C
C O
HC C O
AKT840.5
SIC2264.6
Tm 3
C O
HC (CH3 ) 3 C
C O
AKY932
Y 3
3
Gelest, Inc. Provides technical expertise in silicon and metal-organic materials for applications in Microelectronics & Optoelectronics. The core manufacturing technology of Gelest is silanes, silicones and metal-organics with the capability to handle flammable, corrosive and air sensitive liquids, gases and solids. Headquartered in Morrisville, PA, Gelest is recognized worldwide as an innovator, manufacturer and supplier of commercial and research quantities serving advanced technology markets through a materials science driven approach. The company provides focused technical development and application support for: semiconductors, optical materials, pharmaceutical synthesis, diagnostics and seperation science, and specialty polymeric materials.
For additional information on Gelest’s Silicon and Metal-Organic based products or to inquire how we may assist in Enabling Your Technology, please contact:
www.gelest.com
11 East Steel Rd. Morrisville, PA 19067 Phone: 215-547-1015 Fax: 215-547-2484 [email protected]
Microelectronics & Optoelectronics
Enabling Molecular Advances in Microelectronics & Optoelectronics Organosilicon and Metal-Organic Precursors
Microelectronics METALLIZATION Gelest offers precursor materials for metallization applications derived from Group III & IV elements (Si, Al, Ti, Ta, W, In, Sb, Ge) used to create conductive coatings on silicon, germanium, silicon carbide, sapphire and plastic substrates. These precursors are suitable for various deposition techniques such as ALD, CVD, MOCVD and PECVD. OC2H5 (CH3)3C C2H5O
C O
OC2H5
W
OC2H5
C2H5O
Cu 2
HC C O
(CH3)3C
AKT890
AKC252.8
AKC262
(CH3)2N
N(CH 3)2 As
AlH3 . (CH3)2NCH 2CH3
AlH3 . (CH3)3N
OMAL005
OMAL008
N(CH 3)22
OMRU027
OMAS080
Strained Silicon – Silicon sources such as monochlorosilane, dichlorosilane, 1MS, 2MS, 3MS, 4MS and Germanium sources such as germane, t-butylgermane, germanium tetrachloride and other analogs are used in production of strained silicon using metal organic vapor phase epitaxy (MOVPE) to improve chip performance and lower energy consumption.
SiGe Precursors Ge
Ge CH3
GEG5001
H
H
C2H5
CH3
CH3
CH3
C2H5
H
GET7550
H Ge
GED3410
Ge H
CH3CH2
Ge
CH3 Cl
H
CH3 Ge
H
H
GED3450
Si Cl
CH3 Cl
GEE4695
GET8561
H
H CH3CH2CH2CH2
H
H
H
(CH3)3C
Ge H
Ge H
GeTe
GeSe 2
GEG5480
GEG5350
H
H
GEB1969.5
GEB1970
Barrier Layers – Group IV material are used to reduce electromigration and other effects that Cu and Al have on Si and SiO2 insulator properties and adhesion, while reducing metal corrosion.Typical deposition methods include PVD, CVD and MOCVD.
Tantalum
Cobalt
Titanium
O O N Co C O
(CH3CH2)2N
C
Ta
Ti
NC(CH 3)3
(CH3CH2)2N
O
(CH3)3C HC C O
AKC240
Co 3
(CH3)2N (CH3)2N
Ta
N(CH 3)2 N(CH 3)2
OMTA075
N(CH 3)2 (CH3)2N
Si CH3
Br Br
Ta
OMTI088
CH3CH2
Br Br Br
INTA070
CH3 N
H3C CH3CH2
Ti N(CH 3)2 N(CH 3)2
4
SIT8008.0
N(CH 3)2
C O
CH3 Si
N CH3
OMTA082
INCO032
(CH3)3C
CH3
(CH3CH2)2N
C
CH2CH3
N Ti N N H3C
CH3
CH2CH3
OMTI083
DIELECTRICS Gelest has developed patented “chloride-free” chemical process technology to commercially produce Group IV materials for use as gate dielectrics and ILD (inter-layer dielectrics). Typical Group IV materials for gate dielectrics are compounds of Hf, Zr, and rare earths such as Ce, La, Pr. Typical ILD precursors are Si based. In addition, Si based materials will play a critical role in future generations of porous dielectric materials that will require improved adhesion, mechanical and thermal properties. Gate Dielectrics (High-K) Porous ULK dielectrics will require the use of CAPS.
Zirconium
Hafnium
CH3 O CH2 CH3 H3C C O H3C
H3C O H2C
C O Hf
H3C
O
CH3 CH2 O CH3
N(CH 2CH3)2
AKH326
H3C
Hf N(CH 2CH3)2
Hf
(CH3 ) 2N
C O
OiC3H7 Zr 2 OiC3H7
AKZ948
N(CH 3)2 (CH3)2N
C2H5
N
C2H5
Zr N(CH 3)2 N(CH 3)2
CH3
TDMAZ OMZR080
OMHF083
OMHF080
OMHF075
(CH3)3C
CH3
N Hf N
H3C
N(CH 3 ) 2
OtC4H9
C2H5 N
C2H5
N(CH 3 ) 2
C O HC
AKZ946
AKH333
(CH3 ) 2N
N(CH 2CH3)2
tC4H9O
OtC4H9
tC4H9O
(CH3)3C
OtC4H9 Zr
Hf
C CH2 O CH3 CH3
C
tC4H9O
OtC4H9
CH3
O H3C
(CH3CH2)2N
tC4H9O
Inter-Layer Dielectrics (Low-K) Thin Film
Pore Sealing & CAPS CH3 H
CH3 H Si CH3
H Si
CH3
1MS SIM6515.0
3MS SIT8570.0
N
CH3
CH3 Si H
CH3
CH3
CH3
TSP SIT8709.8
TMDZ SIT7542.0
Porous Films & Porogens (MeO) 3SiCH2CH2 CH2CH2Si(OMe) 3
CH3
O
CH3COCH 2CH2Si
O
Cl
N Si
CH3
CH3
SID3605.0
SID4125.0 OEt
OCH 3
CH3COCH 2CH2Si
EtO
OCH 3
SIA0010.0
SIA0030.0
OEt
SiCH2Si OEt OEt
OCH 3
CH3
SIB1831.0
SIT8185.0
CH3
OEt
SIB1821.0
SIB1817.0
Etch-Stop Layers CH3
CH3
H Si CH3 CH3
SID4595.0
SID4593.0
1MS SIM6515.0
2MS SID4230.0
CH3
3MS SIT8570.0
SiO2 Source H3C
CH3 C
H3C
O Si
H3C
O C
H3C
SIM6560.0
CH3
O O C CH3
C2H5O
O C
C2H5O
OC2H5 Si
CH3
OC2H5
O
DABS SID2790.0
SIP6822.0
CH3 Si CH3
TEOS SIT7110.2
4MS SIT7555.0
MEMS, NEMS, SAMs SAMs (Self-Assembled Monolayers) – Group IV materials can be applied neat or in solution via conventional lithography techniques to form SAMs. SAM is a layer of amphiphilic molecules created by the chemisorption onto a metal oxide, precious metal surface, plastic or nanoparticle substrates, followed by the 2-dimensional alignment of hydrophobic groups to form a structures single monolayer. The surface can be selectively modified to achieve the desired antisticktion, mechanical and chemical properties for microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS).
Metal Oxides SiCl 3
Cl CF3(CF2)7CH2CH2
Si Cl
SIA0200.0
SIA0540.0
SIB0991.0
SIA0591.0
Cl
CH3 CH3 O (CH2 CH2 O)
6-9
CF3CF2CF2CF2CF2CF2CH2CH2SiCl
(CH2 )3 Si OCH3
Cl
CH3
SIM6476.0
SIH5841.0 O HCCH 2CH2CH2Si(OC2H5)3
SIT8185.3
SIT8174.0
SIM6492.7
Gold, Silicon, Titanium Surfaces CH3(CH2)16CH2 Si H
H
CH3(CH2)10CH2Si
H
H
EPITAXY
H
H
H CF3CF2CF2CF2CF2CF2CH 2CH 2Si
SIO6635.0
SIT8173.0
SID4629.6
H
Volatile Carbosilanes and Higher Polysilanes – the preeminent precursors for: • Amorphous Silicon • SiCO:H films for low-k, barrier layers and etch-stop • Silicon Carbide films and buffer layers • ALD promoted patterning and seed layers • Carbon-doped (Tensile-Strained) Silicon • Silicon Carbonitride passivation
Carbosilanes
SIM6515.0 1MS
SID4593.0
SID4230.0
SID4595.0
SIT8709.3
SIT8709.8
SID4592.0
SIT8715.9
Volatile Higher Silanes
SII6463.4
SIN6597.07
SIT7880.0
SIT8709.6
H
Cl
Optoelectronics LEDs (Organic, Polymer, Phosphorescent) Group IV materials are utilized to modify a variety of surfaces that include glass, metal oxides, plastics and nano-crystals. Plastic substrates are critical in the manufacture of flexible electronic displays. Gelest offers a multitude of materials for metallization via low temperature vapor deposition techniques such as CVD and ALD to yield conductive coatings and dielectric coatings for light emitting diodes to include OLEDs, PLEDs and Phosphorescent OLEDs. The ability to customize the refractive index of Group IV materials makes them ideal candidates for cladding fiber optic cables and planar wave-guides. Gelest offers an extensive range of materials for antireflective and refractive index coatings.
Conductive Coatings
Dielectric Coatings CH3
H3C CH3
SNB2000
H3C
C
O
CH3
CH3
H3C
O Sn O C CH3
CH3
SNT7560
CH3
O
H3C
OLED Triplet Emitters
Si(OC 2H 5)3
C CH3 CH3
SIT8088.0
SNT7064
O CH2
CH3
CH3
SIO6640.0
O
C O Si OH
CH3CH2
H3C C CH3
C CH3
H3C
CH3
C O Si OH
Cl
H3C C CH3
O
CH3
CH3
O
CH3(CH2)16CH2 Si Cl
CH2
H3C C CH3
C CH3
Cl
CH3
CH3
SIB0992.0
SIT8627.0
Optical Dopants Cl
O
CH3CH2 N N O
3
-
N
N O
+3
Al
2
-
Zn
AKA067
O
+2
3
-
H3 C
+3
AKA036
Ge
CH3
C2H5O
O
OC2 H5
CH2CH3
GET7100
OMRU018
O CH2CH3 B
OC2 H5
Cl
Al
AKZ933.8
N Ru 3
C2 H5O
AKB156.2
Chromophoric and Phosphorescent Materials
N
N N
CH3
N
Cu
N
N N
N
N
O
3
-
O +2 H3C C O Cd 2
O
+3
Si N
CH3
H3 C
Si
CH3
Ce
N 3
-
Ga
Al
H3 C +3
CH3
AKC261
AKA067
CXCD010
SIB1871.0
AKG308
(CH3 ) 3 C S
N O
Er
+3
AKE276
Eu
HC
3
-
C O
CF3
AKE286.5
C O
AKE297
3
(CH3 ) 3 C
(CH3 ) 3 C
C O
HC C O
AKT840.5
SIC2264.6
Tm 3
C O
HC (CH3 ) 3 C
C O
AKY932
Y 3
3
Gelest, Inc. Provides technical expertise in silicon and metal-organic materials for applications in Microelectronics & Optoelectronics. The core manufacturing technology of Gelest is silanes, silicones and metal-organics with the capability to handle flammable, corrosive and air sensitive liquids, gases and solids. Headquartered in Morrisville, PA, Gelest is recognized worldwide as an innovator, manufacturer and supplier of commercial and research quantities serving advanced technology markets through a materials science driven approach. The company provides focused technical development and application support for: semiconductors, optical materials, pharmaceutical synthesis, diagnostics and seperation science, and specialty polymeric materials.
For additional information on Gelest’s Silicon and Metal-Organic based products or to inquire how we may assist in Enabling Your Technology, please contact:
www.gelest.com
11 East Steel Rd. Morrisville, PA 19067 Phone: 215-547-1015 Fax: 215-547-2484 [email protected]
