PNP General Purpose Transistors - Instructables
S9012 PNP General Purpose Transistors
TO-92
P b Lead(Pb)-Free
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol VCEO VCBO VEBO IC
Value -25 -40 -5 -500
Unit Vdc Vdc Vdc mAdc
PCM
0.625
W
Junction Temperature
Tj
150
C
Storage, Temperature
Tstg
Total Device Dissipation TA =25 C
-55 to +150
C
ELECTRICAL CHARACTERISTICS Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
V(BR)CEO
-25
-
Vdc
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
V(BR)CBO
-40
-
Vdc
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
V(BR)EBO
-5
-
Vdc
Collector Cutoff Current (VCE= -20 Vdc, IB =0)
ICE0
-
-0.1
uAdc
Collector Cutoff Current (VCB= -40 Vdc, IE=0)
ICBO
-
-0.1
uAdc
Emitter Cutoff Current (VEB= -5.0V d c, IC =0)
IEBO
-
-0.1
uAdc
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S9012 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Min
Max
Unit
hFE(1) hFE(2)
64 40
300 -
-
VCE(sat)
-
-0.6
Vdc
VBE(sat)
-
-1.2
Vdc
fT
150
-
MHz
Symbol
Characteristics
On Characteristics DC Current Gain (IC= -50 mAdc, VCE= -1Vdc) (IC= -500 mAdc, VCE= -1Vdc)
Collector-Emitter Saturation Voltage (IC= 500 mAdc, IB= -50 mAdc)
Base-Emitter Saturation Voltage (IC= 500 mAdc, IB= -50 mAdc)
Transition frequency
Classification Of h FE(1) Rank
D
E
F
Range
64-91
78-112
96-135
WEITRON http://www.weitron.com.tw
G 112-166
H 144-202
I 190-300
S9012 Typical Characteristics
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S9012 TO-92 Outline Dimensions
unit:mm
E
H
Dim A B C D E G H J K L
L
C
J K
D
A
B
G
WEITRON http://www.weitron.com.tw
TO-92
Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
TO-92
P b Lead(Pb)-Free
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol VCEO VCBO VEBO IC
Value -25 -40 -5 -500
Unit Vdc Vdc Vdc mAdc
PCM
0.625
W
Junction Temperature
Tj
150
C
Storage, Temperature
Tstg
Total Device Dissipation TA =25 C
-55 to +150
C
ELECTRICAL CHARACTERISTICS Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
V(BR)CEO
-25
-
Vdc
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
V(BR)CBO
-40
-
Vdc
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
V(BR)EBO
-5
-
Vdc
Collector Cutoff Current (VCE= -20 Vdc, IB =0)
ICE0
-
-0.1
uAdc
Collector Cutoff Current (VCB= -40 Vdc, IE=0)
ICBO
-
-0.1
uAdc
Emitter Cutoff Current (VEB= -5.0V d c, IC =0)
IEBO
-
-0.1
uAdc
WEITRON http://www.weitron.com.tw
WE IT R ON
S9012 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Min
Max
Unit
hFE(1) hFE(2)
64 40
300 -
-
VCE(sat)
-
-0.6
Vdc
VBE(sat)
-
-1.2
Vdc
fT
150
-
MHz
Symbol
Characteristics
On Characteristics DC Current Gain (IC= -50 mAdc, VCE= -1Vdc) (IC= -500 mAdc, VCE= -1Vdc)
Collector-Emitter Saturation Voltage (IC= 500 mAdc, IB= -50 mAdc)
Base-Emitter Saturation Voltage (IC= 500 mAdc, IB= -50 mAdc)
Transition frequency
Classification Of h FE(1) Rank
D
E
F
Range
64-91
78-112
96-135
WEITRON http://www.weitron.com.tw
G 112-166
H 144-202
I 190-300
S9012 Typical Characteristics
WEITRON http://www.weitron.com.tw
WE IT R ON
S9012 TO-92 Outline Dimensions
unit:mm
E
H
Dim A B C D E G H J K L
L
C
J K
D
A
B
G
WEITRON http://www.weitron.com.tw
TO-92
Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
