Product Selector Guide - Northrop Grumman Corporation
Product Selector Guide
RF Power Transistors Part Number
WPTB32A0912A
WPTB32A1214A
WPTB48F2729C
WPTB64A1011A
RF Bipolar Transistor
RF Bipolar Transistor
RF Bipolar Transistor
RF Bipolar Transistor
960 - 1215
1215 - 1400
2700 - 2900
1030
Pout (w)
200
220
180
760
Pin (w)
30
42
36
160
Gain Min (dB)
7.5
7.2
6.9
6.8
Eff Min/Typ %
45 min
51 min
40 min
43 typ
40
40
36
52
Pulse Width (usec)
7
150
60
0.8
Duty Cycle (%)
6
5
6.33
1
3:1
3:1
2:1
3:1
Base
Base
Base
Base
C
C
C
C
Metal Ceramic
Metal Ceramic
Metal Ceramic
Metal Ceramic
Part Description Freq. Range (MHz)
Bias (V)
VSWR-T Min Common Terminal Class Package Type
Electrically Erasable Programmable Read Only Memory (EEPROMs) Part Number
16:1 Analog Multiplexers
W28C64
W28C256
W28C0108
Part Number
NGC3590
NGCL3571
NGCP3580
NGC3595
64 kbit (8kx8) EEPROM
256 kbit (32kx8) EEPROM
1 Mbit (128kx8) EEPROM
Part Description
16:1 Analog Multiplexer (5V)
16:1 Analog Multiplexer (10V)
16:1 Analog Multiplexer (30V)
16:1 Analog Multiplexer (30V)
32 pin flat pack
32 pin flat pack
37 pin flat pack
Packaging
28 pin flat pack
28 pin flat pack
28 pin flat pack
28 pin flat pack
Vdd
5V
5V
3.3V
Vdd
5V
5V
15V
15V
VWRITE
-5V
-5V
-4.2V
Vss
0V
-5V
-15V
-15V
-55 C to 125C
-55 C to 125C
-55 C to 125C
CMOS
CMOS
pMOS
CMOS
Asynchronous Addressing
Yes
Yes
Yes
-55 C to 125C
-55 C to 125C
-55 C to 125C
-55 C to 125C
Page Programming
256 bits
512 bits
1024 bits
Rail to rail Operation
Yes
Yes
No
Yes
JDEC CCompatible
Yes
Yes
Yes
Break before Make
Yes
Yes
Yes
Yes
Enudrance
10,000 cycles
10,000 cycles
10,000 cycles
Retention @125C
No
No
No
No
10 years
10 years
10 years
Latched Data Switch ON Resistance
1E8 Ohms
300 krad(Si)
300 krad(Si)
300 krad(Si)
300 krad(Si)
Part Description
Packaging
Temperature Range
Total Ionizing Dose
Analog Switching Temperature Range
300 krad(Si)
300 krad(Si)
300 krad(Si)
Latch UP
NONE
NONE
NONE
SEU LETth (READ)
>63 MeV-cm2/ mg
>63 MeV-cm2/ mg
>94 MeV-cm2/ mg
Total Ionizing Dose
SEU LETth (WRITE)
>35 MeV-cm2/ mg
>35 MeV-cm2/ mg
>40 MeV-cm2/ mg
Latch up
NONE
NONE
NONE
NONE
250 nsec
250 nsec
250 nsec
SEL LETth
>90 MeVcm2/mg
>90 MeVcm2/mg
>90 MeVcm2/mgg
>90 MeVcm2/mg
supply current (standby)
2 mA
2 mA
2 mA
taccess
500 nsec
500 nsec
500 nsec
500 nsec
Supply current (dynamic)
17 mA
0.5 mA
0.5 mA
0.5 mA
0.5 mA
taccess
17 mA
www.northropgrumman.com
Specifications and features subject to change without notice. © 2014 Northrop Grumman Systems Corporation All rights reserved. MS-224-YMM-0514 2014 RM Graphics
20 mA
supply current (standby)
RF Power Transistors Part Number
WPTB32A0912A
WPTB32A1214A
WPTB48F2729C
WPTB64A1011A
RF Bipolar Transistor
RF Bipolar Transistor
RF Bipolar Transistor
RF Bipolar Transistor
960 - 1215
1215 - 1400
2700 - 2900
1030
Pout (w)
200
220
180
760
Pin (w)
30
42
36
160
Gain Min (dB)
7.5
7.2
6.9
6.8
Eff Min/Typ %
45 min
51 min
40 min
43 typ
40
40
36
52
Pulse Width (usec)
7
150
60
0.8
Duty Cycle (%)
6
5
6.33
1
3:1
3:1
2:1
3:1
Base
Base
Base
Base
C
C
C
C
Metal Ceramic
Metal Ceramic
Metal Ceramic
Metal Ceramic
Part Description Freq. Range (MHz)
Bias (V)
VSWR-T Min Common Terminal Class Package Type
Electrically Erasable Programmable Read Only Memory (EEPROMs) Part Number
16:1 Analog Multiplexers
W28C64
W28C256
W28C0108
Part Number
NGC3590
NGCL3571
NGCP3580
NGC3595
64 kbit (8kx8) EEPROM
256 kbit (32kx8) EEPROM
1 Mbit (128kx8) EEPROM
Part Description
16:1 Analog Multiplexer (5V)
16:1 Analog Multiplexer (10V)
16:1 Analog Multiplexer (30V)
16:1 Analog Multiplexer (30V)
32 pin flat pack
32 pin flat pack
37 pin flat pack
Packaging
28 pin flat pack
28 pin flat pack
28 pin flat pack
28 pin flat pack
Vdd
5V
5V
3.3V
Vdd
5V
5V
15V
15V
VWRITE
-5V
-5V
-4.2V
Vss
0V
-5V
-15V
-15V
-55 C to 125C
-55 C to 125C
-55 C to 125C
CMOS
CMOS
pMOS
CMOS
Asynchronous Addressing
Yes
Yes
Yes
-55 C to 125C
-55 C to 125C
-55 C to 125C
-55 C to 125C
Page Programming
256 bits
512 bits
1024 bits
Rail to rail Operation
Yes
Yes
No
Yes
JDEC CCompatible
Yes
Yes
Yes
Break before Make
Yes
Yes
Yes
Yes
Enudrance
10,000 cycles
10,000 cycles
10,000 cycles
Retention @125C
No
No
No
No
10 years
10 years
10 years
Latched Data Switch ON Resistance
1E8 Ohms
300 krad(Si)
300 krad(Si)
300 krad(Si)
300 krad(Si)
Part Description
Packaging
Temperature Range
Total Ionizing Dose
Analog Switching Temperature Range
300 krad(Si)
300 krad(Si)
300 krad(Si)
Latch UP
NONE
NONE
NONE
SEU LETth (READ)
>63 MeV-cm2/ mg
>63 MeV-cm2/ mg
>94 MeV-cm2/ mg
Total Ionizing Dose
SEU LETth (WRITE)
>35 MeV-cm2/ mg
>35 MeV-cm2/ mg
>40 MeV-cm2/ mg
Latch up
NONE
NONE
NONE
NONE
250 nsec
250 nsec
250 nsec
SEL LETth
>90 MeVcm2/mg
>90 MeVcm2/mg
>90 MeVcm2/mgg
>90 MeVcm2/mg
supply current (standby)
2 mA
2 mA
2 mA
taccess
500 nsec
500 nsec
500 nsec
500 nsec
Supply current (dynamic)
17 mA
0.5 mA
0.5 mA
0.5 mA
0.5 mA
taccess
17 mA
www.northropgrumman.com
Specifications and features subject to change without notice. © 2014 Northrop Grumman Systems Corporation All rights reserved. MS-224-YMM-0514 2014 RM Graphics
20 mA
supply current (standby)
