Product Catalog
Advanced Switching and Magnetic Sensing Solutions 1
REDROCK™ RR110 TMR ANALOG SENSOR RedRock™ RR110 TMR Analog Sensor The RedRock 110 Series is an analog magnetic sensor, ideal for use in medical, industrial, automotive, and consumer applications. Based on patented Tunneling Magnetoresistance (TMR) technology, the RR110 Series excels even in low magnetic fields and with large air gaps. The RR110 Series offers high sensitivity in a small footprint package.
™
Features u High sensitivity u Stable temperature performance u Resistant to mechanical stress u REACH Compliant u RoHS Compliant
IDEAL APPLICATIONS Door or lid closure detection Smart phones, tablets and laptops u Proximity detection u Position sensing u Water, electric and gas meters u Fluid level detection u u
DIMENSIONS in Millimeters (Inches)
Top View
End View
2.9 (0.114) 1.4 (0.057)
1.2 (0.047)
0.1 (0.004)
3 0.4 (0.017) 0.6 (0.024)
1.6 2.8 (0.063) (0.110)
Side View 1
2 0.4 (0.016)
1.90 (0.075)
R+
1
2
1 3
R-
1.1 (0.043)
2
Do Not Connect
Ordering Information Part Number RR110-A X 1 1-0 0 Package Model Number 0 - SOT-23 Magnetoresistance (kΩ) Special Feature A: 65kW@ 0 G, 40kW@ 100 G 0 - N/A Temp Rating (ºC) 1 - Industrial (-40- +85) Magnetic Polarity Feature 1 = Unipolar 1 - Default Value
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REDROCK™ RR110 TMR ANALOG SENSOR REDROCK™
RR110
Parameters1 OPERATING CHARACTERISTICS2
Units
Min
Typ
Resistance @0 Gauss
kW
65
Resistance @100 Gauss
kW
40
ns
600
Ω/ºC
-35
Response Time Temperature Coefficient of Resistance (at 0 field)
2
Max
ELECTRICAL CHARACTERISTICS Supply Voltage
Vdd
Operating Current4
mA
15 1
100
ABSOLUTE ENVIRONMENTAL RATINGS Operating Temperature: Industrial
ºC
-40
85
Storage Temperature
ºC
-55
150
Soldering Temperature (3 cycles of 1 min.)
ºC
Operating Magnetic Field
G
100
ESD Level (HBM)3
V
See Note 3
260
Notes:
1
1. Contact factory for more information on additional product offerings. 2. All characteristics as measured at 25ºC 3. ESD PRECAUTIONS MUST BE USED WHEN HANDLING. 4. The RR110 may be operated at lower currents to reduce power consumption, or at higher currents for greater voltage output, as long as the limits noted in the electrical characteristics are not exceeded.
2
MAGNETIC SENSITIVITY TRANSFER CURVE The magnetic sensitivity transfer curve illustrates the characteristic behavior of an analog TMR sensor’s resistance change as the strength of an applied magnetic field changes. The magnet approach curve (red line) shows the change in resistance as the strength of an applied magnetic field increases. The magnet recede curve (blue dashed line) shows the change in resistance as the strength of an applied magnetic field decreases. Alternatively, you can think of the resistance going down the red slope as a magnet approaches the sensor, and going up the blue dashed slope as the magnet moves further away from the sensor.
Typical Sensor Resistance (kΩ)
70
65
SENSOR POLARITY DIAGRAM
60
S N
55
HYSTERESIS
3
50
45
40
35 -150
1
-100
-50
0
50
100
2
150
Field Strength (G)
N-Pole Magnet Approaching Sensor
N-Pole Magnet Receding from Sensor
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REDROCK™ RR120 TMR DIGITAL SENSOR RedRock™ RR120 TMR Digital Sensor The RedRock 120 Series is an integrated digital magnetic sensor ideal for use in medical, industrial, automotive and consumer switching applications. Based on patented Tunneling Magnetoresistance (TMR) technology with CMOS process, the RR120 Series can function even in low magnetic fields with large air gaps. The RR120 Series provides high sensitivity with low power consumption in a small footprint package.
™
Features u High sensitivity u Stable temperature performance u Resistant to mechanical stress u Low power consumption u High frequency performance u Logic output for design flexibility u REACH Compliant u RoHS Compliant
IDEAL APPLICATIONS Door or lid closure detection Smart phones, tablets and laptops u Bare glass reed switch replacement u Motor controllers u Proximity detection u Open-close detection u Water, electric and gas meters u Fluid level detection u “Wake-Up” functionality u u
DIMENSIONS in Millimeters (Inches)
Top View
End View
2.9 (0.114) 1.4 (0.057)
1.2 (0.047)
0.1 (0.004)
3 0.4 (0.017) 0.6 (0.024)
1.6 2.8 (0.063) (0.110)
Side View 1
2 0.4 (0.016)
1.90 (0.075)
Vdd
1
2
1 3
VOUT
1.1 (0.043)
2
GND
Ordering Information Part Number RR120-A X 1 X-X 0 Package Model Number 0 - SOT-23 Magnetic Sensitivity (G) Special Feature A - Op = 30 Rel = 15 0 - N/A Temp Rating (ºC) 1 - Industrial (-40- +85) Magnetic Polarity Power Rating 1 = Unipolar 1 - Default Value
rev. 07202017
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REDROCK™ RR120 TMR DIGITAL SENSOR REDROCK™
RR120
Parameters OPERATING CHARACTERISTICS1
Units
Min
Typ
Max
Operate Sensitivity
G
20
30
40
Release Sensitivity
G
8
15
30
Hysteresis
G
15
Operate Time
ms
30
Release Time Temperature Coefficient of Operate Sensitivity
ms
30
G/ºC
-0.07
ELECTRICAL CHARACTERISTICS1 Supply Voltage (Vdd)
V
3.0
3.6
nA
350
400
Output Voltage (High) (Vouth)
V
2.7 V
Output Voltage (Low) (Voutl)
V
0.2 V
Average Current Drain 2
2
2.7
ABSOLUTE ENVIRONMENTAL RATINGS Operating Temperature: Industrial
ºC
-40
Storage Temperature
ºC
-55
Soldering Temperature (3 cycles, 1 min.)
ºC
260
Operating Magnetic Field
G
100
ESD Level (HBM)
V
4000
50 40
20
Output OFF
VOUT
3 OUTPUT STATUS (VOLTS)
4.0
BRP = 15G
3.0
Switch to Low
5.0
2
HYSTERESIS BOP-BRP = 50% BOP
10
N
1
BOP = 30G
30
Switch to High
S
60
MAGNETIC FIELD (GAUSS)
SENSOR POLARITY DIAGRAM
150
MAGNETIC FIELD vs. OUTPUT STATUS
Notes: 1. All characteristics as measured at 25ºC 2. See "Magnetic Field vs. Output Status" (at right) for more details.
85
Characteristic
Output ON BRP
Conditions Output
North Pole
B > BOP
Low
Null or Weak Magnetic Field
B < BRP
High
South Pole
B > BOP
High
BOP OUTPUT HIGH = OFF
B+
BHYS
2.0
1.0
OUTPUT LOW = ON
RR120 DIGITAL FUNCTION BLOCK DIAGRAM
0.0 TIME
Vdd
MTJ SENSOR LOCATION DIAGRAM
VDD
DUTY CYCLE CONTROL
DCC DCC
DCC
EN
EN
PMU
3
IREF OSC VREF
MLU SENSOR
VB
DCC
A
EN
HYSTERESIS CONTROL
VREF
OUTPUT LATCH
VOUT
C 1
A
Nominal Dimensions 1.60
B
2.90
C
0.80
D
1.45
Symbols
D
IPTAT
2 B
GND
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REDROCK™ RR130 TMR DIGITAL SWITCH RedRock™ RR130 TMR Digital Switch The RedRock 130 Series is an integrated digital magnetic switch ideal for use in medical, industrial, automotive and consumer switching applications. It is based on patented Tunneling Magnetoresistance (TMR) technology with integrated CMOS process. The RR130 Series can operate in low magnetic fields with large air gaps. The open drain output can interface with a system voltage up to 3.9V for added design flexibility. The RR130 Series provides high sensitivity with low power consumption in a small footprint package.
™
Features u High sensitivity u Stable temperature performance u Resistant to mechanical stress u Low power consumption u High frequency performance u Open drain MOSFET for design flexibility u REACH Compliant u RoHS Compliant
IDEAL APPLICATIONS Door or lid closure detection Smart phones, tablets and laptops u Bare glass reed switch replacement u Motor controllers u Proximity detection u Power switch or open-close detection u Water, electric and gas meters u Fluid level detection u “Wake-Up” functionality u u
DIMENSIONS in Millimeters (Inches)
Top View
End View
2.9 (0.114) 1.4 (0.057)
1.2 (0.047)
0.1 (0.004)
3 0.4 (0.017) 0.6 (0.024)
1.6 2.8 (0.063) (0.110)
Side View 1
2 0.4 (0.016)
1.90 (0.075)
Vdd
1
2
1 3
VOUT
1.1 (0.043)
2
GND
Ordering Information Part Number RR130-A X 1 X-X 0 Package Model Number 0 - SOT-23 Magnetic Sensitivity (G) Special Feature A - Op = 30 Rel = 15 0 - N/A Temp Rating (ºC) 1 - Industrial (-40- +85) Magnetic Polarity 1 = Unipolar Power Rating 1 - Default Value
rev. 07202017
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REDROCK™ RR130 TMR DIGITAL SWITCH REDROCK™
RR130
Parameters OPERATING CHARACTERISTICS1
Units
Min
Typ
Max
Operate Sensitivity
G
20
30
40
Release Sensitivity
G
8
15
30
Hysteresis
G
15
Operate Time
ms
30
Release Time
ms
30
G/ºC
-0.05
Temperature Coefficient of Operate Sensitivity
ELECTRICAL CHARACTERISTICS
1
Supply Voltage2 (Vdd)
V
2.7
3.0
3.6
350
400
Average Current Drain
nA
System Voltage (Vsys)
V
Vdd + 0.3
System Current (Isys)
mA
15
2
2
ABSOLUTE ENVIRONMENTAL RATINGS Operating Temperature: Industrial
ºC
-40 -55
85
Storage Temperature
ºC
Soldering Temperature
ºC
260
Max. Exposed Magnetic Field
G
100
ESD Level (HBM)
V
4000 MAGNETIC FIELD (GAUSS)
1. All characteristics as measured at 25ºC 2. See "Application Circuit" for more information.
APPLICATION CIRCUIT
SENSOR POLARITY DIAGRAM
Vdd
VSYS
2
RR130
BOP = 30G
30 20
3 GND
Output OFF
BRP = 15G
MTJ SENSOR LOCATION DIAGRAM
Output ON 6.0
BRP
B > BOP
Low
Null or Weak Magnetic Field
B < BRP
High
South Pole
B > BOP
High
BOP OUTPUT HIGH = OFF
B+
BHYS
4.0
Conditions Output
OUTPUT LOW = ON TIME
RR130 DIGITAL FUNCTION BLOCK DIAGRAM A
C
A B
2.90
C
0.80 DUTY CYCLE CONTROL 1.45
D
1
2 B Symbols
A
Nominal Dimensions 1.60
C
Nominal Dimensions 0.80
B
2.90
D
1.45
Vdd
Nominal Dimensions 1.60
Symbols
D
Symbols
North Pole
0.0
3
2
Characteristic
2.0
N
1
HYSTERESIS BOP-BRP = 50% BOP
10
8.0
VOUT
S
3
40
10.0
OUTPUT STATUS (VOLTS)
0.1mF
50
VOUT
RPULLUP
1
MAGNETIC FIELD vs. OUTPUT STATUS
Switch to Low
RR130 Open Drain Output Application Circuit With the open drain output, the system voltage can range up to Vdd + 0.3V. Please keep in mind the supply voltage to the RR130 must remain at 3.6V. A decoupling capacitor between the supply voltage and ground is required with placement close to the magnetic sensor. A typical capacitor value of 0.1 mF will suffice.
60
Switch to High
Notes:
150
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VDD
VOUT
DCC DCC
TMR SENSOR ARRAY
DCC
EN
EN
PMU
IREF OSC VREF DRIVER
IPTAT
VB
DCC
EN
HYSTERESIS CONTROL
VREF
GND
OUTPUT LATCH
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TMR TECHNICAL & APPLICATIONS INFORMATION TMR SENSOR & SWITCH PACKAGING Standard packaging is Tape & Reel containing 3,000 pieces. Below is a chart of Tape & Reel dimensions for standard TMR products. 4.0 ± 0.01 Ø1.5
+0.1 -0
2.0 ± 0.05
8.0 ± 0.2
1.75 ± 0.1 3.5 ± 0.05 2.75
4.0 ± 0.01
see Fig. B below
see Fig. A below
Ø1.1 ± 0.1
0.20 ± 0.05 Ao3.3 ± 0.1
2.55 ± 0.1
Bo3.2 ± 0.1
.3 R0
0.2
0.4
0.6
0.8
0.8
0.6
0.4
0.2
Ø178.0±0.05
5 4 3
2
1
00.75mm
Ø60.0±0.05
1.5
Ø60.0±0.05
Ø178.0±0.05
00.95mm
1
2
.3
.3
Ko1.47 ± 0.1 Fig. B
1.5
4
5º MAX.
R0
R0
0.6
Fig. A
3
R
1.1 ± 0.1 5º MAX.(2X)
5º MAX.(2X)
3
0.
5º MAX.(2X)
2.2±0.05 +1.5
10.6
9.0 -0
EIAJ +1.5
Ø13.5±0.05
9.0 -0
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TMR TECHNICAL & APPLICATIONS INFORMATION SUGGESTED SOLDER PAD LAYOUT
SUGGESTED REFLOW PROFILE
3X 0.030 60 SECONDS MAXIMUM
15-25 s Typical 250
3X 0.047
Cool Down 2-4 ºC/s Temperature (ºC)
0.062
260 ºC Max (Lead-Free) 240-250 ºC Max Range (Leaded)
0.124
200 150
Soak
100
Preheat at 2-3 ºC/s 50
0
50
50
150
200
250
Time (s)
0.037 0.075 (Units in mm)
Notes: 1. Fully compatible with standard no-lead solder profile, 260 ºC for 1 minute max (3 cycles max) 2. Profile shown as example. Users are advised to develop their own board-level profile 3. Temperature tolerance: +0 ºC, as measured at any point on the package or leads 4. MSL rating of 1 compatible with J-STD-020 or equivalent.
APPLICATION CIRCUITS Vdd
Vdd Constant Current
R1
VOUT
VOUT
GND
VSYS
1
OR
RR110
Vdd
Vdd
RR110
0.1mF RR120
RPULLUP
1 2
0.1mF VOUT
RR130
2 VOUT
3
3
GND
GND
GND
RR110 Magnetoresistance Application Circuit The RR110 can be configured with a constant voltage source and a fixed resistor to create a voltage divider circuit. Alternatively, a constant current source eliminates the need for a fixed resistor.
RR120 Digital Output Application Circuit The output voltage on the RR120 is active low, meaning that while a sufficiently strong magnetic field is present, the output voltage is low. The output voltage can be connected to a digital I/O pin on a microcontroller. A decoupling capacitor between the supply voltage and ground is required with placement close to the magnetic sensor. A typical capacitor value of 0.1 mF will suffice.
RR130 Open Drain Output Application Circuit With the open drain output, the system voltage can range up to Vdd + 0.3V. Please keep in mind the supply voltage to the RR130 must remain at 3.6V. A decoupling capacitor between the supply voltage and ground is required with placement close to the magnetic sensor. A typical capacitor value of 0.1 mF will suffice.
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TMR TECHNICAL & APPLICATIONS INFORMATION GLOSSARY OF TERMS Hysteresis: Hysteresis refers to the difference between two points of interest for a particular device. For digital sensors and switches, it represents the difference between the operate sensitivity and the release sensitivity, expressed either as an absolute value (BOP – BRP) or the % difference (BOP – BRP)/BOP. For an analog sensor, the hysteresis is the difference between the “magnet approach curve” and the “magnet recede curve.” Magnet Approach Curve: The magnet approach curve is the characteristic change in resistance of an analog TMR sensor as an applied magnetic field approaches the sensor, typically plotted as a function of the magnetic field strength.
Operate Sensitivity: The operate sensitivity defines the upper limit of the strength of an applied magnetic field that a digital TMR sensor or switch must operate. Operate Time: The operate time is the difference, in time, between the application of a magnetic field and the output response of the device. In an analog sensor, the response is a change in output resistance. In a digital sensor, the response is a change in state of the electrical output. Release Sensitivity: The release sensitivity defines the lower limit of the strength of an applied magnetic field that a digital TMR sensor or switch must release.
Magnet Recede Curve: The magnet recede curve is the characteristic change in resistance of an analog TMR sensor as an applied Release Time: The release time is the difference, in time, between magnetic field recedes from the sensor, typically plotted as a function the removal of an applied magnetic field and the output response of of the magnetic field strength. the device. In an analog sensor, the response is a change in output resistance. In a digital sensor, the response is a change in state of the Magnetoresistance: Magnetoresistance is a phenomenon electrical output. wherein the electrical resistance of certain materials changes when exposed to an externally-applied magnetic field. Tunnel Magnetoresistance (TMR): Tunnel Magnetoresistance is the magnetoresistive effect that occurs in a magnetic tunnel Magnetic Transfer Curve: The magnetic transfer curve defines junction. the characteristic behavior of an analog TMR sensor by combining both the magnet approach curve and the magnet receive curve together. Magnetic Tunnel Junction: A magnetic tunnel junction is a thin film structure consisting of two magnetic layers separated by a thin insulator. Because the insulating layer is thin enough (typically a few nanometers), electrons can tunnel from one magnetic layer into the other.
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TMR TECHNICAL & APPLICATIONS INFORMATION MAGNETIC SENSITIVITY MAPS Magnetic sensitivity maps show the operate and release loci in threedimensional space when a magnet is presented to a magnetically operated switch or sensor. The absolute operate and release distances between the magnet and the sensor will vary depending on the sensitivity of the switch and the strength of the magnet. However, the
shape and direction of the operate loci stay relatively constant except for cases where the magnet is physically much larger than the sensor. These plots were generated using a 2mm^3 cubic shaped NdFeB N52 magnet with its North pole presented to the ground pin and a South pole presented to the opposite side.
RR120/RR130 Magnetic Sensitivity Pattern, perspective view
RR120/RR130 Magnetic Sensitivity Pattern, YZ plane
• Operate Points Release Points
RR120/RR130 Magnetic Sensitivity Pattern, XY plane
RR120/RR130 Magnetic Sensitivity Pattern, XZ plane
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