SK45GD063 - RS Components International
SK45GD063 $ 3 10 4!
Absolute Maximum Ratings Symbol Conditions IGBT 5-"
$6 3 10 4
&
$6 3 910 4
&=>
.88
5
:0
;
$ 3
3 98 @ 2
; $6 3 908 4
188
;
Module & =>"
Preliminary Data
;
$26 $
Features
! " #$% &' $ ( )
*) + ! , -./0/1
Typical Applications* " &2 " *#"
5
;! 9 ,
5'- 3 5-! & 3 9 ;
&-"
5'- 3 8 5! 5- 3 5-"
4
%:8 ,,, E910
4
1088
5
$ 3 10 4!
Characteristics Symbol Conditions IGBT 5'-
%:8 ,,, E908
min.
typ.
:!0
0!0
$6 3 10 4
max. .!0
5
8!90
;
$6 3 910 4 &'-"
5- 3 8 5! 5'- 3 /8 5
;
$6 3 10 4
918
$6 3 910 4 5-8 -
5'- 3 90 5 & 3 08 ;! 5'- 3 90 5
; 9
5
$6 3 910 4
9!9
5
$6 3 104
18
F
$6 3 104 2,
F 1!9
1!0
$6 3 9104 2,
5- 3 10! 5'- 3 8 5
-
5'-3 8 ,,, 18 5 =' 3 11 F =' 3 11 F
- = 6%
&' $
5 3 /885 &3 /8; $6 3 910 4 5'-3?905
5 5
1!1
D D
8!1
D
900
:0 :8 9!: 108 /8
H
9!1
H
3 9 >+
G'
;
$6 3 10 4
$6 3 9104 5-
Units
9
IJK
GD
1
30-10-2006 DIL
© by SEMIKRON
SK45GD063 Characteristics Symbol Conditions Inverse Diode 5D 3 5-
SEMITOP® 3 IGBT Module
&D 3 10 ;@ 5'- 3 8 5
min. $6 3 10 4 2,
typ.
max.
Units
9!:0
9!L
5
$6 3 910 4 2,
9!:
9!L0
5
5D8
$6 3 910 4
8! G
&D 3 10 ; J 3 %088 ;JC
-
53 /885
= 6%
>
N >9
1!10 /8
9!L
IJK
1!0
SK45GD063 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Preliminary Data
Features
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
! " #$% &' $ ( )
*) + ! , -./0/1
Typical Applications* " &2 " *#"
GD
2
30-10-2006 DIL
© by SEMIKRON
SK45GD063
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
30-10-2006 DIL
© by SEMIKRON
SK45GD063
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
30-10-2006 DIL
© by SEMIKRON
SK45GD063 UL recognized file
no. E 63 532
$9. " ! # ! O 1
$ 9.
5
'
30-10-2006 DIL
© by SEMIKRON
Absolute Maximum Ratings Symbol Conditions IGBT 5-"
$6 3 10 4
&
$6 3 910 4
&=>
.88
5
:0
;
$ 3
3 98 @ 2
; $6 3 908 4
188
;
Module & =>"
Preliminary Data
;
$26 $
Features
! " #$% &' $ ( )
*) + ! , -./0/1
Typical Applications* " &2 " *#"
5
;! 9 ,
5'- 3 5-! & 3 9 ;
&-"
5'- 3 8 5! 5- 3 5-"
4
%:8 ,,, E910
4
1088
5
$ 3 10 4!
Characteristics Symbol Conditions IGBT 5'-
%:8 ,,, E908
min.
typ.
:!0
0!0
$6 3 10 4
max. .!0
5
8!90
;
$6 3 910 4 &'-"
5- 3 8 5! 5'- 3 /8 5
;
$6 3 10 4
918
$6 3 910 4 5-8 -
5'- 3 90 5 & 3 08 ;! 5'- 3 90 5
; 9
5
$6 3 910 4
9!9
5
$6 3 104
18
F
$6 3 104 2,
F 1!9
1!0
$6 3 9104 2,
5- 3 10! 5'- 3 8 5
-
5'-3 8 ,,, 18 5 =' 3 11 F =' 3 11 F
- = 6%
&' $
5 3 /885 &3 /8; $6 3 910 4 5'-3?905
5 5
1!1
D D
8!1
D
900
:0 :8 9!: 108 /8
H
9!1
H
3 9 >+
G'
;
$6 3 10 4
$6 3 9104 5-
Units
9
IJK
GD
1
30-10-2006 DIL
© by SEMIKRON
SK45GD063 Characteristics Symbol Conditions Inverse Diode 5D 3 5-
SEMITOP® 3 IGBT Module
&D 3 10 ;@ 5'- 3 8 5
min. $6 3 10 4 2,
typ.
max.
Units
9!:0
9!L
5
$6 3 910 4 2,
9!:
9!L0
5
5D8
$6 3 910 4
8! G
&D 3 10 ; J 3 %088 ;JC
-
53 /885
= 6%
>
N >9
1!10 /8
9!L
IJK
1!0
SK45GD063 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Preliminary Data
Features
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
! " #$% &' $ ( )
*) + ! , -./0/1
Typical Applications* " &2 " *#"
GD
2
30-10-2006 DIL
© by SEMIKRON
SK45GD063
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
30-10-2006 DIL
© by SEMIKRON
SK45GD063
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
30-10-2006 DIL
© by SEMIKRON
SK45GD063 UL recognized file
no. E 63 532
$9. " ! # ! O 1
$ 9.
5
'
30-10-2006 DIL
© by SEMIKRON
