Supporting Information Flexible Hybrid Organic-Inorganic Perovskite ...
Supporting Information
Flexible Hybrid Organic-Inorganic Perovskite Memory Chungwan Gu and Jang-Sik Lee* Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea *e-mail: [email protected]
Figure S1. SEM images of spin-coated CH3NH3PbI3 film without solvent engineering.
-3
Current (A)
10
-4
10
-5
10
-6
1st Cycle 10th Cycle 20th Cycle 30th Cycle
10
-7
10
-1.0
-0.5
0.0
0.5
1.0
Voltage (V)
Figure S2. Resistive switching performance of Au/CH3NH3PbI3/ITO after DC switching cycles up to 30 cycles.
Current (A)
(a)
-3
10
-4
10
-5
10
-6
10
W/O Bending Tensile Bending
-7
10
-1.0
-0.5
0.0
0.5
1.0
Voltage (V)
-3
10
Current (A)
(b)
-4
10
-5
10
ON current OFF current
V readout = 0.2 V 0
5
10
15
20
25
30
Number of Cycles (#)
Figure S3. Resistive switching performance of Au/CH3NH3PbI3/ITO under bent state. (a) I-V characteristics of flexible memory device under tensile bent state with a bending radius of 7.5 mm. (b) Endurance of flexible memory devices under tensile bent state.
Flexible Hybrid Organic-Inorganic Perovskite Memory Chungwan Gu and Jang-Sik Lee* Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea *e-mail: [email protected]
Figure S1. SEM images of spin-coated CH3NH3PbI3 film without solvent engineering.
-3
Current (A)
10
-4
10
-5
10
-6
1st Cycle 10th Cycle 20th Cycle 30th Cycle
10
-7
10
-1.0
-0.5
0.0
0.5
1.0
Voltage (V)
Figure S2. Resistive switching performance of Au/CH3NH3PbI3/ITO after DC switching cycles up to 30 cycles.
Current (A)
(a)
-3
10
-4
10
-5
10
-6
10
W/O Bending Tensile Bending
-7
10
-1.0
-0.5
0.0
0.5
1.0
Voltage (V)
-3
10
Current (A)
(b)
-4
10
-5
10
ON current OFF current
V readout = 0.2 V 0
5
10
15
20
25
30
Number of Cycles (#)
Figure S3. Resistive switching performance of Au/CH3NH3PbI3/ITO under bent state. (a) I-V characteristics of flexible memory device under tensile bent state with a bending radius of 7.5 mm. (b) Endurance of flexible memory devices under tensile bent state.
