Supporting Information for Selective Growth of Titanium Nitride on ...
Supporting Information for Selective Growth of Titanium Nitride on HfO2 Across Nanolines and Nanopillars
Sonali N. Chopra, Zizhuo Zhang, Chris Kaihlanen, and John G. Ekerdt*
The University of Texas at Austin, McKetta Department of Chemical Engineering, 200 E. Dean Keeton St. Stop C0400 Austin, Texas 78712.
Corresponding Author’s e-mail address: [email protected]
Figure S1. Selected Ti 2p (a) and Hf 4f (b) XP spectra following 150 TiN ALD cycles on a trimethylchlorosilane-treated planar HfO2 surface (—), n-butyltrimethoxysilane-treated planar HfO2 surface (—), n-butyltrichlorosilane-treated planar HfO2 surface (—), noctadecyldimethylchlorosilane-treated planar HfO2 surface (—), and an untreated planar HfO2 surface (—).
Figure S2. Cross-sectional SEM images of 300 cycles TiN on ODDC-treated nanopillar surfaces. Image a shows the sample at a ~70o tilt. Image b shows the sample at a ~90o tilt.
Figure S3. Ti 2p (a) and Hf 4f (b) XP spectra following 200 TiN ALD cycles on a DDCtreated planar (no nanolines or nanopillars) surface (—) and an untreated planar (no nanolines or nanopillars) HfO2 surface (—). These samples were placed next to the nanopillar-patterned samples in the passivation chamber and TiN ALD reactor. As can be seen from the figure, a DDC treatment of planar samples resulted in negligible TiN deposition.
Sonali N. Chopra, Zizhuo Zhang, Chris Kaihlanen, and John G. Ekerdt*
The University of Texas at Austin, McKetta Department of Chemical Engineering, 200 E. Dean Keeton St. Stop C0400 Austin, Texas 78712.
Corresponding Author’s e-mail address: [email protected]
Figure S1. Selected Ti 2p (a) and Hf 4f (b) XP spectra following 150 TiN ALD cycles on a trimethylchlorosilane-treated planar HfO2 surface (—), n-butyltrimethoxysilane-treated planar HfO2 surface (—), n-butyltrichlorosilane-treated planar HfO2 surface (—), noctadecyldimethylchlorosilane-treated planar HfO2 surface (—), and an untreated planar HfO2 surface (—).
Figure S2. Cross-sectional SEM images of 300 cycles TiN on ODDC-treated nanopillar surfaces. Image a shows the sample at a ~70o tilt. Image b shows the sample at a ~90o tilt.
Figure S3. Ti 2p (a) and Hf 4f (b) XP spectra following 200 TiN ALD cycles on a DDCtreated planar (no nanolines or nanopillars) surface (—) and an untreated planar (no nanolines or nanopillars) HfO2 surface (—). These samples were placed next to the nanopillar-patterned samples in the passivation chamber and TiN ALD reactor. As can be seen from the figure, a DDC treatment of planar samples resulted in negligible TiN deposition.
