Supporting Information
Multiphase Structure of Tantalum Oxynitride TaOxNy Thin Films Deposited by Reactive Magnetron Sputtering Christine Taviot-Guého,* Joël Cellier, Angélique Bousquet, Eric Tomasella Université Clermont Auvergne, Université Blaise Pascal, Institut de Chimie de Clermont-Ferrand, BP 10448, F-63000 CLERMONT-FERRAND, FRANCE CNRS, UMR 6296, ICCF, F-63178 AUBIERE, FRANCE
Figure S1. X-ray diffraction patterns of (a) as-prepared films and (b) silica substrate using an Ag anticathode as an X-ray source. The inset in panel a) shows XRD data in the 4-40° 2θ range.
Figure S2. Comparison between the experimental PDF obtained at RF=0 and the simulated PDF of the Fm-3m TaN reference.43
Figure S3 Structure of β-TaON showing planes containing only oxygen atoms along the aaxis, alternating with Ta,N planes.34,34
Table S1. Binding energies of Ta4f 5/2 and Ta4f 7/2 peaks for TaN, Ta3N5, TaON, Ta2O5
Composition
Ta4f5/2 (eV)
Ta4f7/2 (eV)
References
TaN
24,8
23,5
72
Ta3N5
26,7
24,8
70
TaON
27,7
25,8
70
28,4
26,2
71
28,5
26,6
70
Ta2O5
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