Supporting Information (SI)
Supporting Information (SI) Two-Dimensional Tin Selenide Nanostructures for Flexible All-Solid-State Supercapacitors Chunli Zhang, † Huanhuan Yin, † Min Han, †,‡,* Zhihui Dai, † Huan Pang, ‡,┴,* Yulin Zheng, † Ya-Qian Lan, †
Jianchun Bao, †,* and Jianmin Zhu‡
† Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023 (P. R. China) ‡State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (P. R. China) ┴ Key Laboratory for Clearer Energy and Functional Materials of Henan Province, College of Chemistry and Chemical Engineering, Anyang Normal University, Anyang 455001 (P. R. China) * To whom correspondence should be addressed. E-mail: [email protected] ( M. Han); [email protected] ( J. C. Bao) [email protected] (H. Pang) Tel / Fax: +86-25-85891051
This information contains: (1) Fine XPS spectra of Sn 3d and Se 3d for SnSe2 NDs and SnSe NSs (Figure S1) (2) AFM images for SnSe2 NDs and SnSe NSs (Figure S2) (3) FT-IR spectra for SnSe2 NDs and SnSe NSs (Figure S3) (4) Control experiments results for phase control of final product (Figure S4-5) (5) Microstructural and electrochemical data for mixed-phase SnSe-SnSe2 NDs (Figure S6-S7) (6) The last five Galvanostatic charge-discharge cycles for SnSe2 NDs and SnSe NSs based electrodes (Figure S8) (7) Structural characterization of SnSe2 NDs and SnSe NSs after cycling tests (Figure S9) (8) Galvanostatic charge–discharge curves and cycling performances of SnSe2 NDs-SSCs and SnSe NSs-SSCs devices (Figure S10) (9) Flexibility and mechanical stability of SnSe NSs-SSCs device (Figure S11) Page S0
(10) Abbreviation index
Figure S1. A) The XPS fine spectrum of Sn 3d for SnSe2 NDs. B) Splitting peaks of XPS fine spectrum of Se 3d for SnSe2 NDs. C) The XPS fine spectrum of Sn 3d for SnSe NSs. D) Splitting peaks of XPS fine spectrum of Se 3d for SnSe NSs. E) The table shows the detailed binding energies of Sn (3d5/2 and 3d3/2) and Se (3d5/2 and 3d3/2) for SnSe2 NDs and SnSe NSs.
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Figure S2. A) Tapping-mode AFM image and B) cross-sectional analysis of the SnSe2 NDs on mica. C) Tapping-mode AFM image and D) cross-sectional analysis of the SnSe NSs on mica.
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Figure S3. A) FT-IR spectrum of the SnSe2 NDs. B) FT-IR spectrum of the SnSe NSs. For comparison, the FT-IR spectra for pure BTBC and pure TOP as well as the combination of BTBC and TOP are also given in (A) and (B).
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Figure S4. A) TEM image and B) XRD pattern of the control sample synthesized by using 1-octadecene instead of DMPU as solvent and keeping other conditions constant.
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Figure S5. A-B) TEM image and XRD pattern of the product obtained by using only BTBC as capping reagent. C-D) TEM image and XRD pattern of the sample synthesized by using only TOP as capping reagent.
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Figure S6. A-B) FE-SEM and TEM images of mixed-phase SnSe-SnSe2 NDs. C) HRTEM image of an individual ND. The right upper and left lower corners show the magnified lattice fringes in the two white rectangular regions. D) XRD pattern for mixed-phase SnSe-SnSe2 NDs. E-F) Fine XPS spectra of Sn 3d and Se 3d. G) The table shows the corresponding binding energies of Sn (3d5/2 and 3d3/2) and Se (3d5/2 and 3d3/2) in mixed-phase SnSe-SnSe2 NDs. Page S6
Figure S7. A) CV plots for mixed-phase SnSe-SnSe2 NDs at different scan rates in 6M KOH solution. B) Galvanostatic charge-discharge curves at the current density ranging from 0.5 to 4 A g-1. C) Specific capacitance versus current density plot. D) Cycling stability curve at the current density of 1A g-1.
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Figure S8. Galvanostatic cycling behaviour of the last five cycles (total cycling number: 1000) for A) SnSe2 NDs and B) SnSe NSs electrodes in 6 M KOH electrolyte solution.
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Figure S9. TEM images of A) SnSe2 NDs and B) SnSe NSs electrodes after 1000 cycles at the current density of 1 A g-1 in 6 M KOH electrolyte solution.
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Figure S10. A-B) Galvanostatic charge-discharge curves at various current densities for (A) SnSe2 NDs-SSCs and (B) SnSe NSs-SSCs devices. C) Cycling performances of SnSe2 NDs-SSCs device at the current densities of 20 and 50 mA m-2. D) Cycling performances of SnSe NSs-SSCs device at the current densities of 45 and 60 mA m-2.
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Figure S11. The flexibility and mechanical stability of SnSe NSs-SSCs device by measuring the CV curves at different bending angles. A) 0°, B) 60°, C) 90°, and D) 120°.
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Abbreviation index NDs (nanodisks)
NSs (nanosheets)
CV (cyclic voltammetry)
NDs-SSCs (nanodisks based all-solid-state flexible supercapacitors) NSs-SSCs (nanosheets based all-solid-state flexible supercapacitors) XPS (X-ray photoelectron energy spectroscopy) AFM (atomic force microscopy) FT-IR (Fourier transform infrared spectrum) TEM (transmission electron microscopy)
XRD (X-Ray diffraction)
DMPU (1,3-dimethyl-3, 4,5,6-tetrahydro-2(1H)-pyrimidinone) BTBC (borane-tert-butylamine complex)
TOP (trioctylphosphine)
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Jianchun Bao, †,* and Jianmin Zhu‡
† Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023 (P. R. China) ‡State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (P. R. China) ┴ Key Laboratory for Clearer Energy and Functional Materials of Henan Province, College of Chemistry and Chemical Engineering, Anyang Normal University, Anyang 455001 (P. R. China) * To whom correspondence should be addressed. E-mail: [email protected] ( M. Han); [email protected] ( J. C. Bao) [email protected] (H. Pang) Tel / Fax: +86-25-85891051
This information contains: (1) Fine XPS spectra of Sn 3d and Se 3d for SnSe2 NDs and SnSe NSs (Figure S1) (2) AFM images for SnSe2 NDs and SnSe NSs (Figure S2) (3) FT-IR spectra for SnSe2 NDs and SnSe NSs (Figure S3) (4) Control experiments results for phase control of final product (Figure S4-5) (5) Microstructural and electrochemical data for mixed-phase SnSe-SnSe2 NDs (Figure S6-S7) (6) The last five Galvanostatic charge-discharge cycles for SnSe2 NDs and SnSe NSs based electrodes (Figure S8) (7) Structural characterization of SnSe2 NDs and SnSe NSs after cycling tests (Figure S9) (8) Galvanostatic charge–discharge curves and cycling performances of SnSe2 NDs-SSCs and SnSe NSs-SSCs devices (Figure S10) (9) Flexibility and mechanical stability of SnSe NSs-SSCs device (Figure S11) Page S0
(10) Abbreviation index
Figure S1. A) The XPS fine spectrum of Sn 3d for SnSe2 NDs. B) Splitting peaks of XPS fine spectrum of Se 3d for SnSe2 NDs. C) The XPS fine spectrum of Sn 3d for SnSe NSs. D) Splitting peaks of XPS fine spectrum of Se 3d for SnSe NSs. E) The table shows the detailed binding energies of Sn (3d5/2 and 3d3/2) and Se (3d5/2 and 3d3/2) for SnSe2 NDs and SnSe NSs.
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Figure S2. A) Tapping-mode AFM image and B) cross-sectional analysis of the SnSe2 NDs on mica. C) Tapping-mode AFM image and D) cross-sectional analysis of the SnSe NSs on mica.
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Figure S3. A) FT-IR spectrum of the SnSe2 NDs. B) FT-IR spectrum of the SnSe NSs. For comparison, the FT-IR spectra for pure BTBC and pure TOP as well as the combination of BTBC and TOP are also given in (A) and (B).
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Figure S4. A) TEM image and B) XRD pattern of the control sample synthesized by using 1-octadecene instead of DMPU as solvent and keeping other conditions constant.
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Figure S5. A-B) TEM image and XRD pattern of the product obtained by using only BTBC as capping reagent. C-D) TEM image and XRD pattern of the sample synthesized by using only TOP as capping reagent.
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Figure S6. A-B) FE-SEM and TEM images of mixed-phase SnSe-SnSe2 NDs. C) HRTEM image of an individual ND. The right upper and left lower corners show the magnified lattice fringes in the two white rectangular regions. D) XRD pattern for mixed-phase SnSe-SnSe2 NDs. E-F) Fine XPS spectra of Sn 3d and Se 3d. G) The table shows the corresponding binding energies of Sn (3d5/2 and 3d3/2) and Se (3d5/2 and 3d3/2) in mixed-phase SnSe-SnSe2 NDs. Page S6
Figure S7. A) CV plots for mixed-phase SnSe-SnSe2 NDs at different scan rates in 6M KOH solution. B) Galvanostatic charge-discharge curves at the current density ranging from 0.5 to 4 A g-1. C) Specific capacitance versus current density plot. D) Cycling stability curve at the current density of 1A g-1.
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Figure S8. Galvanostatic cycling behaviour of the last five cycles (total cycling number: 1000) for A) SnSe2 NDs and B) SnSe NSs electrodes in 6 M KOH electrolyte solution.
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Figure S9. TEM images of A) SnSe2 NDs and B) SnSe NSs electrodes after 1000 cycles at the current density of 1 A g-1 in 6 M KOH electrolyte solution.
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Figure S10. A-B) Galvanostatic charge-discharge curves at various current densities for (A) SnSe2 NDs-SSCs and (B) SnSe NSs-SSCs devices. C) Cycling performances of SnSe2 NDs-SSCs device at the current densities of 20 and 50 mA m-2. D) Cycling performances of SnSe NSs-SSCs device at the current densities of 45 and 60 mA m-2.
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Figure S11. The flexibility and mechanical stability of SnSe NSs-SSCs device by measuring the CV curves at different bending angles. A) 0°, B) 60°, C) 90°, and D) 120°.
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Abbreviation index NDs (nanodisks)
NSs (nanosheets)
CV (cyclic voltammetry)
NDs-SSCs (nanodisks based all-solid-state flexible supercapacitors) NSs-SSCs (nanosheets based all-solid-state flexible supercapacitors) XPS (X-ray photoelectron energy spectroscopy) AFM (atomic force microscopy) FT-IR (Fourier transform infrared spectrum) TEM (transmission electron microscopy)
XRD (X-Ray diffraction)
DMPU (1,3-dimethyl-3, 4,5,6-tetrahydro-2(1H)-pyrimidinone) BTBC (borane-tert-butylamine complex)
TOP (trioctylphosphine)
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