The electrical and optical properties of germanene on single-layer ...
Supporting Information
The electrical and optical properties of germanene on single-layer BeO substrate ‡ ab
‡a
a
b
b
Xianping Chen, * Xiang Sun, Junke Jiang, Qiuhua Liang, Qun Yang, and Ruishen Meng*
b
a
School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology,
541004 Guilin, China. b
Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China,
Chongqing University and College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.
*Corresponding authors: *E-mail, [email protected]; phone, +86-23-65111178. *E-mail: [email protected] S1
The other two stacking patterns, pattern II and pattern III, of Ge/BeO heterostructure are also investigated. Herein, we provide their relevant electric properties as a supporting information.
Fig. S1. Band gaps of different stacking patterns as (a) for pattern II; (b) for pattern III.
Fig. S2. Band gap as a function of electric field for Ge/BeO heterostructure of pattern II (a) and pattern III (b)
S2
Fig. S3. Band gap of Ge/BeO heterobilayer structure versus biaxial strain and single-axial strain (a) for pattern II; (b) for pattern III.
S3
The electrical and optical properties of germanene on single-layer BeO substrate ‡ ab
‡a
a
b
b
Xianping Chen, * Xiang Sun, Junke Jiang, Qiuhua Liang, Qun Yang, and Ruishen Meng*
b
a
School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology,
541004 Guilin, China. b
Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China,
Chongqing University and College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.
*Corresponding authors: *E-mail, [email protected]; phone, +86-23-65111178. *E-mail: [email protected] S1
The other two stacking patterns, pattern II and pattern III, of Ge/BeO heterostructure are also investigated. Herein, we provide their relevant electric properties as a supporting information.
Fig. S1. Band gaps of different stacking patterns as (a) for pattern II; (b) for pattern III.
Fig. S2. Band gap as a function of electric field for Ge/BeO heterostructure of pattern II (a) and pattern III (b)
S2
Fig. S3. Band gap of Ge/BeO heterobilayer structure versus biaxial strain and single-axial strain (a) for pattern II; (b) for pattern III.
S3
