ZDX130N50 : Transistors
ZDX130N50 Nch 500V 13A Power MOSFET
Datasheet lOutline
500V
RDS(on) (Max.)
0.52W
ID
-13A
PD
40W
TO-220FM (3) (2) (1)
lFeatures
or
VDSS
lInner circuit
e N co ew m m D es en ig de ns d f
1) Low on-resistance.
(1) Gate (2) Drain (3) Source
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packaging
lApplication
Switching Power Supply
Type
Bulk
Reel size (mm)
-
Tape width (mm)
-
Basic ordering unit (pcs) Taping code Marking
500 -
ZDX130N50
lAbsolute maximum ratings(Ta = 25°C) Parameter
Symbol
Value
Unit
VDSS
500
V
ID *1
13
A
ID,pulse *2
39
A
VGSS
30
V
Power dissipation (Tc = 25°C)
PD
40
W
Junction temperature
Tj
150
°C
Tstg
-55 to +150
°C
R
Drain - Source voltage
Continuous drain current
Tc = 25°C
N ot
Pulsed drain current
Gate - Source voltage
Range of storage temperature
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1/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lThermal resistance Symbol RthJA
Thermal resistance, junction - ambient
Values Min.
Typ.
Max.
-
-
3.125
lElectrical characteristics(Ta = 25°C) Symbol
Conditions
Values Min.
Drain - Source breakdown voltage
V(BR)DSS
VGS = 0V, ID = 1mA
500
°C/W
Unit
Typ.
Max.
-
-
V
100
mA
e N co ew m m D es en ig de ns d f
Parameter
Unit
or
Parameter
Zero gate voltage drain current
IDSS
VDS = 500V, VGS = 0V
-
Gate - Source leakage current
IGSS
VGS = 30V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
2.5
-
4.5
V
-
0.4
0.52
W
Gate threshold voltage
RDS(on) *3 VGS = 10V, ID = 6.5A
N ot
R
Static drain - source on - state resistance
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristics(Ta = 25°C) Parameter
Symbol
Conditions
Values Min.
Typ.
Max.
2.0
8.5
-
gfs *3
VDS = 10V, ID = 6A
Input capacitance
Ciss
VGS = 0V
-
2180
-
Output capacitance
Coss
VDS = 25V
-
200
-
Reverse transfer capacitance
Crss
f = 1MHz
-
60
-
VDD ⋍ 250V, VGS = 10V
-
30
-
ID = 5A
-
25
-
td(off) *3
RL = 50W
-
43
-
tf *3
RG = 10W
-
15
-
Rise time
tr *3
Turn - off delay time Fall time
td(on) *3
e N co ew m m D es en ig de ns d f
Turn - on delay time
S
pF
or
Transconductance
Unit
ns
lGate Charge characteristics(Ta = 25°C) Parameter
Symbol
Total gate charge
Qg *3
Gate - Source charge
Qgs
Gate - Drain charge
Qgd *3
Gate plateau voltage
V(plateau)
*3
Conditions
Values
Min.
Typ.
Max.
VDD ⋍ 250V
-
40
-
ID = 5A
-
11.5
-
VGS = 10V
-
12.5
-
VDD ⋍ 250V, ID = 5A
-
5.5
-
Unit
nC
V
R
*1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1%
N ot
*3 Pulsed
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3/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Inverse diode continuous, forward current
Symbol
Conditions
IS *1
Values Min.
Typ.
Max.
-
-
13
Unit
A
ISM *2
Forward voltage
VSD *3
VGS = 0V, IS = 13A
-
-
39
A
-
1.7
V
N ot
R
e N co ew m m D es en ig de ns d f
Inverse diode direct current, pulsed
or
Tc = 25°C
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4/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100 PW = 100us
or
100 10
Drain Current : ID [A]
80 60 40 20 0
PW = 1ms
e N co ew m m D es en ig de ns d f
Power Dissipation : PD/PD max. [%]
120
1
PW = 10ms
Operation in this area is limited by RDS(on)
0.1
Ta=25ºC Single Pulse
0
25
50
75
100
125
150
0.01
175
0.1
1
10
100
1000
10000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
10
Ta=25ºC
R
1
0.1
N ot
Normalized Transient Thermal Resistance : r(t)
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
0.01
0.001 0.0001
top
D=1 D=0.5 D=0.1 D=0.05 D=0.01 bottom Signle
Rth(ch-c)=3.125ºC/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 0.01
1
100
Pulse Width : PW [s]
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5/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristic curves
Fig.5 Typical Output Characteristics(II)
Fig.4 Typical Output Characteristics(I) 3
13
VGS=6.0V
Drain Current : ID [A]
10
2
VGS=10.0V
1.5
VGS=5.0V
1 0.5
9 8
e N co ew m m D es en ig de ns d f
VGS=6.0V
Ta=25ºC Pulsed
VGS=10.0V
11
or
2.5
Drain Current : ID [A]
12
Ta=25ºC Pulsed
7 6 5
VGS=5.0V
4 3 2 1
0
0
0.2
0.4
0.6
0.8
0
1
0
2
6
10
Fig.7 Typical Transfer Characteristics
Fig.6 Breakdown Voltage vs. Channel Temperature
100
800
VDS= 10V
VGS = 0V ID = 1mA
700
R
650
10
Drain Current : ID [A]
750
600
N ot
550 500
1
0.1
Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC
0.01
450 400
8
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
4
-50
0
50
100
0.001
150
Junction Temperature : Tj [°C]
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0
1
2
3
4
5
6
7
8
Gate - Source Voltage : VGS [V]
6/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristic curves
Fig.8 Gate Threshold Voltage vs. Channel Temperature
Fig.9 Transconductance vs. Drain Current 100
VDS = 10V ID = 1mA
3.0
2.0
1.0
0.0
or
Transconductance : gfs [S]
4.0
VDS= 10V 10
e N co ew m m D es en ig de ns d f
Gate Threshold Voltage : VGS(th) [V]
5.0
-50 -25
0
25
50
75
1
0.1
0.01 0.01
100 125 150
Junction Temperature : Tj [°C]
Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC
0.1
1
10
100
Drain Current : ID [A]
Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage Ta=25ºC
2.5
ID = 6.5A
R
2 1.5
N ot
Static Drain - Source On-State Resistance : RDS(on) [mW]
3
1
ID = 13A
0.5 0
0
2
4
6
8
10
Gate - Source Voltage : VGS [V]
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7/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristic curves
Fig.11 Static Drain - Source On - State Resistance vs. Drain Current(II)
Fig.12 Static Drain - Source On - State Resistance vs. Junction Temperature
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
1
0
0.01
4
VGS = 10V ID = 13A
3
or
10
Static Drain - Source On-State Resistance : RDS(on) [mW]
5 VGS= 10V
e N co ew m m D es en ig de ns d f
Static Drain - Source On-State Resistance : RDS(on) [mW]
100
0.1
1
10
100
Drain Current : ID [A]
2
1
0 -50
0
50
100
150
N ot
R
Junction Temperature : Tj [ºC]
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8/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristic curves
Fig.13 Typical Capacitance vs. Drain - Source Voltage
Fig.14 Switching Characteristics 10000
Ta=25ºC f=1MHz VGS=0V
Switching Time : t [ns]
1000
Coss
100
10
1
1000
Ciss
Crss
0.01
tf td(off)
e N co ew m m D es en ig de ns d f
Capacitance : C [pF]
10000
0.1
1
10
100
100
10
td(on)
1
1000
0.1
10
20
30
40
50
Inverse Diode Forward Current : IS [A]
Gate - Source Voltage : VGS [V]
10
R 0
100
Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage
Ta = 25ºC VDD = 250V ID = 13A RG = 10W
N ot 0
10
Drain Current : ID [A]
Fig.15 Dynamic Input Characteristics
5
tr
1
Drain - Source Voltage : VDS [V]
10
Ta=25ºC VDD= 250V VGS= 10V RG=10W
or
100000
1
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
0.1
0.01
0.0
0.5
1.0
1.5
Source - Drain Voltage : VSD [V]
Total Gate Charge : Qg [nC]
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VGS=0V
9/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lMeasurement circuits Fig.1-2 Switching Waveforms
e N co ew m m D es en ig de ns d f
or
Fig.1-1 Switching Time Measurement Circuit
Fig.2-2 Gate Charge Waveform
N ot
R
Fig.2-1 Gate Charge Measurement Circuit
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10/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lDimensions (Unit : mm) D
TO-220FM
E
A
E1
A1
A
A2
e N co ew m m D es en ig de ns d f
A4
or
F
φp
b1
L
Q
c
e
b
DIM
N ot
R
A A1 A2 A4 b b1 c D E e E1 F L p Q x
x
A
MILIMETERS MIN MAX 16.60 17.60 1.80 2.20 14.80 15.40 6.80 7.20 0.70 0.85 1.10 1.50 0.70 0.85 9.90 10.30 4.40 4.80 2.54 2.70 3.00 2.80 3.20 11.50 12.50 3.00 3.40 2.10 3.10 0.381
INCHES
MIN 0.654 0.071 0.583 0.268 0.028 0.043 0.028 0.39 0.173
MAX 0.693 0.087 0.606 0.283 0.033 0.059 0.033 0.406 0.189
0.10 0.106 0.11 0.453 0.118 0.083 -
0.118 0.126 0.492 0.134 0.122 0.015
Dimension in mm/inches
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11/11
2012.08 - Rev.B
Notice
Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd.
or
The content specified herein is subject to change for improvement without notice.
e N co ew m m D es en ig de ns d f
The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
N
ot
R
The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System http://www.rohm.com/contact/
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R1120A
Datasheet lOutline
500V
RDS(on) (Max.)
0.52W
ID
-13A
PD
40W
TO-220FM (3) (2) (1)
lFeatures
or
VDSS
lInner circuit
e N co ew m m D es en ig de ns d f
1) Low on-resistance.
(1) Gate (2) Drain (3) Source
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packaging
lApplication
Switching Power Supply
Type
Bulk
Reel size (mm)
-
Tape width (mm)
-
Basic ordering unit (pcs) Taping code Marking
500 -
ZDX130N50
lAbsolute maximum ratings(Ta = 25°C) Parameter
Symbol
Value
Unit
VDSS
500
V
ID *1
13
A
ID,pulse *2
39
A
VGSS
30
V
Power dissipation (Tc = 25°C)
PD
40
W
Junction temperature
Tj
150
°C
Tstg
-55 to +150
°C
R
Drain - Source voltage
Continuous drain current
Tc = 25°C
N ot
Pulsed drain current
Gate - Source voltage
Range of storage temperature
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lThermal resistance Symbol RthJA
Thermal resistance, junction - ambient
Values Min.
Typ.
Max.
-
-
3.125
lElectrical characteristics(Ta = 25°C) Symbol
Conditions
Values Min.
Drain - Source breakdown voltage
V(BR)DSS
VGS = 0V, ID = 1mA
500
°C/W
Unit
Typ.
Max.
-
-
V
100
mA
e N co ew m m D es en ig de ns d f
Parameter
Unit
or
Parameter
Zero gate voltage drain current
IDSS
VDS = 500V, VGS = 0V
-
Gate - Source leakage current
IGSS
VGS = 30V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
2.5
-
4.5
V
-
0.4
0.52
W
Gate threshold voltage
RDS(on) *3 VGS = 10V, ID = 6.5A
N ot
R
Static drain - source on - state resistance
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristics(Ta = 25°C) Parameter
Symbol
Conditions
Values Min.
Typ.
Max.
2.0
8.5
-
gfs *3
VDS = 10V, ID = 6A
Input capacitance
Ciss
VGS = 0V
-
2180
-
Output capacitance
Coss
VDS = 25V
-
200
-
Reverse transfer capacitance
Crss
f = 1MHz
-
60
-
VDD ⋍ 250V, VGS = 10V
-
30
-
ID = 5A
-
25
-
td(off) *3
RL = 50W
-
43
-
tf *3
RG = 10W
-
15
-
Rise time
tr *3
Turn - off delay time Fall time
td(on) *3
e N co ew m m D es en ig de ns d f
Turn - on delay time
S
pF
or
Transconductance
Unit
ns
lGate Charge characteristics(Ta = 25°C) Parameter
Symbol
Total gate charge
Qg *3
Gate - Source charge
Qgs
Gate - Drain charge
Qgd *3
Gate plateau voltage
V(plateau)
*3
Conditions
Values
Min.
Typ.
Max.
VDD ⋍ 250V
-
40
-
ID = 5A
-
11.5
-
VGS = 10V
-
12.5
-
VDD ⋍ 250V, ID = 5A
-
5.5
-
Unit
nC
V
R
*1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1%
N ot
*3 Pulsed
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
3/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Inverse diode continuous, forward current
Symbol
Conditions
IS *1
Values Min.
Typ.
Max.
-
-
13
Unit
A
ISM *2
Forward voltage
VSD *3
VGS = 0V, IS = 13A
-
-
39
A
-
1.7
V
N ot
R
e N co ew m m D es en ig de ns d f
Inverse diode direct current, pulsed
or
Tc = 25°C
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
4/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100 PW = 100us
or
100 10
Drain Current : ID [A]
80 60 40 20 0
PW = 1ms
e N co ew m m D es en ig de ns d f
Power Dissipation : PD/PD max. [%]
120
1
PW = 10ms
Operation in this area is limited by RDS(on)
0.1
Ta=25ºC Single Pulse
0
25
50
75
100
125
150
0.01
175
0.1
1
10
100
1000
10000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
10
Ta=25ºC
R
1
0.1
N ot
Normalized Transient Thermal Resistance : r(t)
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
0.01
0.001 0.0001
top
D=1 D=0.5 D=0.1 D=0.05 D=0.01 bottom Signle
Rth(ch-c)=3.125ºC/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 0.01
1
100
Pulse Width : PW [s]
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
5/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristic curves
Fig.5 Typical Output Characteristics(II)
Fig.4 Typical Output Characteristics(I) 3
13
VGS=6.0V
Drain Current : ID [A]
10
2
VGS=10.0V
1.5
VGS=5.0V
1 0.5
9 8
e N co ew m m D es en ig de ns d f
VGS=6.0V
Ta=25ºC Pulsed
VGS=10.0V
11
or
2.5
Drain Current : ID [A]
12
Ta=25ºC Pulsed
7 6 5
VGS=5.0V
4 3 2 1
0
0
0.2
0.4
0.6
0.8
0
1
0
2
6
10
Fig.7 Typical Transfer Characteristics
Fig.6 Breakdown Voltage vs. Channel Temperature
100
800
VDS= 10V
VGS = 0V ID = 1mA
700
R
650
10
Drain Current : ID [A]
750
600
N ot
550 500
1
0.1
Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC
0.01
450 400
8
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
4
-50
0
50
100
0.001
150
Junction Temperature : Tj [°C]
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0
1
2
3
4
5
6
7
8
Gate - Source Voltage : VGS [V]
6/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristic curves
Fig.8 Gate Threshold Voltage vs. Channel Temperature
Fig.9 Transconductance vs. Drain Current 100
VDS = 10V ID = 1mA
3.0
2.0
1.0
0.0
or
Transconductance : gfs [S]
4.0
VDS= 10V 10
e N co ew m m D es en ig de ns d f
Gate Threshold Voltage : VGS(th) [V]
5.0
-50 -25
0
25
50
75
1
0.1
0.01 0.01
100 125 150
Junction Temperature : Tj [°C]
Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC
0.1
1
10
100
Drain Current : ID [A]
Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage Ta=25ºC
2.5
ID = 6.5A
R
2 1.5
N ot
Static Drain - Source On-State Resistance : RDS(on) [mW]
3
1
ID = 13A
0.5 0
0
2
4
6
8
10
Gate - Source Voltage : VGS [V]
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
7/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristic curves
Fig.11 Static Drain - Source On - State Resistance vs. Drain Current(II)
Fig.12 Static Drain - Source On - State Resistance vs. Junction Temperature
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
1
0
0.01
4
VGS = 10V ID = 13A
3
or
10
Static Drain - Source On-State Resistance : RDS(on) [mW]
5 VGS= 10V
e N co ew m m D es en ig de ns d f
Static Drain - Source On-State Resistance : RDS(on) [mW]
100
0.1
1
10
100
Drain Current : ID [A]
2
1
0 -50
0
50
100
150
N ot
R
Junction Temperature : Tj [ºC]
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8/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lElectrical characteristic curves
Fig.13 Typical Capacitance vs. Drain - Source Voltage
Fig.14 Switching Characteristics 10000
Ta=25ºC f=1MHz VGS=0V
Switching Time : t [ns]
1000
Coss
100
10
1
1000
Ciss
Crss
0.01
tf td(off)
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Capacitance : C [pF]
10000
0.1
1
10
100
100
10
td(on)
1
1000
0.1
10
20
30
40
50
Inverse Diode Forward Current : IS [A]
Gate - Source Voltage : VGS [V]
10
R 0
100
Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage
Ta = 25ºC VDD = 250V ID = 13A RG = 10W
N ot 0
10
Drain Current : ID [A]
Fig.15 Dynamic Input Characteristics
5
tr
1
Drain - Source Voltage : VDS [V]
10
Ta=25ºC VDD= 250V VGS= 10V RG=10W
or
100000
1
Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC
0.1
0.01
0.0
0.5
1.0
1.5
Source - Drain Voltage : VSD [V]
Total Gate Charge : Qg [nC]
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
VGS=0V
9/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lMeasurement circuits Fig.1-2 Switching Waveforms
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or
Fig.1-1 Switching Time Measurement Circuit
Fig.2-2 Gate Charge Waveform
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Fig.2-1 Gate Charge Measurement Circuit
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
10/11
2012.08 - Rev.B
Data Sheet
ZDX130N50 lDimensions (Unit : mm) D
TO-220FM
E
A
E1
A1
A
A2
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A4
or
F
φp
b1
L
Q
c
e
b
DIM
N ot
R
A A1 A2 A4 b b1 c D E e E1 F L p Q x
x
A
MILIMETERS MIN MAX 16.60 17.60 1.80 2.20 14.80 15.40 6.80 7.20 0.70 0.85 1.10 1.50 0.70 0.85 9.90 10.30 4.40 4.80 2.54 2.70 3.00 2.80 3.20 11.50 12.50 3.00 3.40 2.10 3.10 0.381
INCHES
MIN 0.654 0.071 0.583 0.268 0.028 0.043 0.028 0.39 0.173
MAX 0.693 0.087 0.606 0.283 0.033 0.059 0.033 0.406 0.189
0.10 0.106 0.11 0.453 0.118 0.083 -
0.118 0.126 0.492 0.134 0.122 0.015
Dimension in mm/inches
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11/11
2012.08 - Rev.B
Notice
Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd.
or
The content specified herein is subject to change for improvement without notice.
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
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ot
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The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
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R1120A
