4022 D
US008199269B2
(12) United States Patent Hattori et a1. (54)
METHOD FOR MANUFACTURING THIN FILM TRANSISTORS
(75) Inventors: Takashi Hattori, Musashimurayama
(JP); Mutsuko Hatano, Kokubunji (JP)
5,498,761 A * 5,891,986 A *
Ltd., Hyogo-Ken (JP) (*)
Notice:
2005/0207020 Al*
9/2005 11/2006
Kim
2006/0257785 A1 *
ll/2006
Johnson ........... ..
2006/0275939 A1 *
12/2006
Yokoyama et al. ........... .. 438/48
2007/0091062 A1
257/40
430/2701
4/2007 French et al.
FOREIGN PATENT DOCUMENTS JP
03-192321
12/1989
OTHER PUBLICATIONS
Jul. 3, 2008
Ian French et al., “Thin Plastic Electrophoretic Displays Fabricated by a Novel Process”, 2005, SID 05 Digest, pp. 1634-1637.
Jan. 15, 2009
Foreign Application Priority Data
Jul. 11,2007
. . . ..
(Continued)
Prior Publication Data
(30)
... ... ..
428/641
A1 *
(21) Appl. No.: 12/216,445
US 2009/0015760 A1
Kawamura .................. .. 359/634
2006/0240275 Al* 10/2006 Gadkaree
(Continued)
U.S.C. 154(b) by 658 days.
(65)
3/1996 Wessling et a1. ............ .. 427/542 4/1999 Yamaguchi et a1. ........ .. 528/310
7/2007 Arai et a1. 3/2002 Ninomiya et a1.
Subject to any disclaimer, the term of this patent is extended or adjusted under 35
(22) Filed:
Jun. 12, 2012
7,248,315 B2 2002/0037605 A1
2006/0255336
(73) Assignees: Hitachi Displays, Ltd., Chiba-Ken (JP); Panasonic Liquid Crystal Display Co.,
US 8,199,269 B2
(10) Patent N0.: (45) Date of Patent:
(JP) ............................... .. 2007-181829
(Continued) Primary Examiner * Mark Robinson Assistant Examiner * Jerry Blevins
(74) Attorney, Agent, or Firm * Stites & Harbison, PLLC;
(51)
Juan Carlos A. Marquez, Esq
Int. Cl. G02F 1/136 G02F 1/1333
(2006.01) (2006.01)
H01L 21/00 H01L 21/469
(2006.01) (2006.01)
(57)
(52)
US. Cl. ............ .. 349/43; 349/93; 349/122; 438/26;
(58)
Field of Classi?cation Search .................. .. 349/43,
438/30; 438/780
349/93, 122; 438/26, 30, 780 See application ?le for complete search history. (56)
References Cited U.S. PATENT DOCUMENTS 4,393,092 A * 4,596,740 A *
7/1983 6/1986
ABSTRACT
A method for manufacturing a thin ?lm transistor including a step of forming a polymer ?lm (a) to a layer above a support substrate, a step of forming a semiconductor element above
the polymer ?lm (a), and a step of separating the support substrate from the polymer ?lm (a) formed With the semicon ductor element in Which the polymer ?lm (a) has a thickness of 1 pm or more and 30 pm or less, a transmittance of 80% or higher to a visible light at a Wavelength of 400 nm or more and 800 nm or less, a 3 Wt % loss temperature of300o C. or higher,
and a melting point of 2800 C. or higher.
Gill ............................. .. 427/524 Tsukane ..................... .. 428/336
12 Claims, 10 Drawing Sheets
ITO2 [T01 C3 17 12
12B 13A
18 10A
4022 D
C1
US 8,199,269 B2 Page 2 US. PATENT DOCUMENTS 2007/0134362 A1* 2009/0104769 A1*
TW
1-239422
6/2007 Heidari ....................... .. 425/385 4/2009 Lee et a1. .................... .. 438/653
9/2005
OTHER PUBLICATIONS
FOREIGN PATENT DOCUMENTS
Ian French et al., “Invited Paper: Flexible Displays and Electronics Made in AM-LCD Facilities by the EPLaRTM Process”, 2007, SID 07
13 JP
222222222; 2000_284303
54122: 3/l999
Yung-Hui Yeh- et al., “7-inch C-olor VGA Flexible TFT LCD on
JP JP
2001425082 2001-290138
10/1999 4/2000
Colorless Polyimide Substrate With 200 °C a-S1:H TFTs”, 2007, SID 07 Digest, PP~ 1677-1679
JP
2002-031818
7/2000
Of?ce Action from the Taiwan, ROC Patent Of?ce in the corre
JP
2002-033464
7/2000
sponding Taiwan Patent Application No. 097117858, dated Dec. 21,
JP
2002-100790
9/2000
2011.
JP
2002-258252
3/2001
JP
2006-237542
3/2005
_
_
* crted by examlner
US. Patent
Jun. 12, 2012
Sheet 1 0110
FIG. 1
D
SH2-SH4
4
G
US 8,199,269 B2
US. Patent
Jun. 12, 2012
Sheet 2 0f 10
US 8,199,269 B2
FIG. 2 11B
FIG. 3
CF
%
1%‘
n01
ITO1
§A“0
ITO1
CLO
CST
J
ITOZk 13A\12
\
g
ITO2
a\\\\\‘ 4 ~\\\\\\\\
12> v.-----.-...-. m
///////////////////////////////2
115
LAMINATING A POLARIZATION FILM
l=>
US. Patent
Jun. 12, 2012
Sheet 5 0f 10
FIG. 7
US 8,199,269 B2
US. Patent
Jun. 12, 2012
Sheet 6 0f 10
FIG. 8 a
'/
4
D
SH1 3
SH2-8H4
2
4
G
SH2
US 8,199,269 B2
US. Patent
Jun. 12, 2012
Sheet 7 0f 10
US 8,199,269 B2
FIG. 10 ITO2
8H41b ‘3
1
ITO1
8H3 D
ITO2
13A
12D
15?
12c
16A 17 1s 10A
SH1 3
2
4
SH2
FIG. 11 ITOS
(
I
_
_
r
__
A
A’
A/IT01 \_
L__
\_
FIG. 12 [T03 ITO1 20
1.02 I,» 779% 51% A?»
US. Patent
Jun. 12, 2012
Sheet 9 0f 10
. . I ~ . . .
I o . . v .
. -.I
,/
///
/%.,7
US 8,199,269 B2
.. I . . . -
. . . .
. . . . ~ . .
/
C3
C2
FIG 15 ITO2 ITO1 C3
3
4022 D
C1
US. Patent
Jun. 12, 2012
Sheet 10 0f 10
FIG. 16A 19
US 8,199,269 B2
FIG. 16B 17
FORMING THE HEAT RESISTANT
>\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\‘
FILM TRANSI
FORMTN‘?
==#>ADHERING A PLASTIC
(UPSHJE
SUBSTRATE
STRUCT
FIG. 16E \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\Y
Will/Ill. mm“. .s
QFTHEGLASS SEPARATION ‘3;; :>
:2
(TRANS%MI)CE
I
g 8 ‘
(12) United States Patent Hattori et a1. (54)
METHOD FOR MANUFACTURING THIN FILM TRANSISTORS
(75) Inventors: Takashi Hattori, Musashimurayama
(JP); Mutsuko Hatano, Kokubunji (JP)
5,498,761 A * 5,891,986 A *
Ltd., Hyogo-Ken (JP) (*)
Notice:
2005/0207020 Al*
9/2005 11/2006
Kim
2006/0257785 A1 *
ll/2006
Johnson ........... ..
2006/0275939 A1 *
12/2006
Yokoyama et al. ........... .. 438/48
2007/0091062 A1
257/40
430/2701
4/2007 French et al.
FOREIGN PATENT DOCUMENTS JP
03-192321
12/1989
OTHER PUBLICATIONS
Jul. 3, 2008
Ian French et al., “Thin Plastic Electrophoretic Displays Fabricated by a Novel Process”, 2005, SID 05 Digest, pp. 1634-1637.
Jan. 15, 2009
Foreign Application Priority Data
Jul. 11,2007
. . . ..
(Continued)
Prior Publication Data
(30)
... ... ..
428/641
A1 *
(21) Appl. No.: 12/216,445
US 2009/0015760 A1
Kawamura .................. .. 359/634
2006/0240275 Al* 10/2006 Gadkaree
(Continued)
U.S.C. 154(b) by 658 days.
(65)
3/1996 Wessling et a1. ............ .. 427/542 4/1999 Yamaguchi et a1. ........ .. 528/310
7/2007 Arai et a1. 3/2002 Ninomiya et a1.
Subject to any disclaimer, the term of this patent is extended or adjusted under 35
(22) Filed:
Jun. 12, 2012
7,248,315 B2 2002/0037605 A1
2006/0255336
(73) Assignees: Hitachi Displays, Ltd., Chiba-Ken (JP); Panasonic Liquid Crystal Display Co.,
US 8,199,269 B2
(10) Patent N0.: (45) Date of Patent:
(JP) ............................... .. 2007-181829
(Continued) Primary Examiner * Mark Robinson Assistant Examiner * Jerry Blevins
(74) Attorney, Agent, or Firm * Stites & Harbison, PLLC;
(51)
Juan Carlos A. Marquez, Esq
Int. Cl. G02F 1/136 G02F 1/1333
(2006.01) (2006.01)
H01L 21/00 H01L 21/469
(2006.01) (2006.01)
(57)
(52)
US. Cl. ............ .. 349/43; 349/93; 349/122; 438/26;
(58)
Field of Classi?cation Search .................. .. 349/43,
438/30; 438/780
349/93, 122; 438/26, 30, 780 See application ?le for complete search history. (56)
References Cited U.S. PATENT DOCUMENTS 4,393,092 A * 4,596,740 A *
7/1983 6/1986
ABSTRACT
A method for manufacturing a thin ?lm transistor including a step of forming a polymer ?lm (a) to a layer above a support substrate, a step of forming a semiconductor element above
the polymer ?lm (a), and a step of separating the support substrate from the polymer ?lm (a) formed With the semicon ductor element in Which the polymer ?lm (a) has a thickness of 1 pm or more and 30 pm or less, a transmittance of 80% or higher to a visible light at a Wavelength of 400 nm or more and 800 nm or less, a 3 Wt % loss temperature of300o C. or higher,
and a melting point of 2800 C. or higher.
Gill ............................. .. 427/524 Tsukane ..................... .. 428/336
12 Claims, 10 Drawing Sheets
ITO2 [T01 C3 17 12
12B 13A
18 10A
4022 D
C1
US 8,199,269 B2 Page 2 US. PATENT DOCUMENTS 2007/0134362 A1* 2009/0104769 A1*
TW
1-239422
6/2007 Heidari ....................... .. 425/385 4/2009 Lee et a1. .................... .. 438/653
9/2005
OTHER PUBLICATIONS
FOREIGN PATENT DOCUMENTS
Ian French et al., “Invited Paper: Flexible Displays and Electronics Made in AM-LCD Facilities by the EPLaRTM Process”, 2007, SID 07
13 JP
222222222; 2000_284303
54122: 3/l999
Yung-Hui Yeh- et al., “7-inch C-olor VGA Flexible TFT LCD on
JP JP
2001425082 2001-290138
10/1999 4/2000
Colorless Polyimide Substrate With 200 °C a-S1:H TFTs”, 2007, SID 07 Digest, PP~ 1677-1679
JP
2002-031818
7/2000
Of?ce Action from the Taiwan, ROC Patent Of?ce in the corre
JP
2002-033464
7/2000
sponding Taiwan Patent Application No. 097117858, dated Dec. 21,
JP
2002-100790
9/2000
2011.
JP
2002-258252
3/2001
JP
2006-237542
3/2005
_
_
* crted by examlner
US. Patent
Jun. 12, 2012
Sheet 1 0110
FIG. 1
D
SH2-SH4
4
G
US 8,199,269 B2
US. Patent
Jun. 12, 2012
Sheet 2 0f 10
US 8,199,269 B2
FIG. 2 11B
FIG. 3
CF
%
1%‘
n01
ITO1
§A“0
ITO1
CLO
CST
J
ITOZk 13A\12
\
g
ITO2
a\\\\\‘ 4 ~\\\\\\\\
12> v.-----.-...-. m
///////////////////////////////2
115
LAMINATING A POLARIZATION FILM
l=>
US. Patent
Jun. 12, 2012
Sheet 5 0f 10
FIG. 7
US 8,199,269 B2
US. Patent
Jun. 12, 2012
Sheet 6 0f 10
FIG. 8 a
'/
4
D
SH1 3
SH2-8H4
2
4
G
SH2
US 8,199,269 B2
US. Patent
Jun. 12, 2012
Sheet 7 0f 10
US 8,199,269 B2
FIG. 10 ITO2
8H41b ‘3
1
ITO1
8H3 D
ITO2
13A
12D
15?
12c
16A 17 1s 10A
SH1 3
2
4
SH2
FIG. 11 ITOS
(
I
_
_
r
__
A
A’
A/IT01 \_
L__
\_
FIG. 12 [T03 ITO1 20
1.02 I,» 779% 51% A?»
US. Patent
Jun. 12, 2012
Sheet 9 0f 10
. . I ~ . . .
I o . . v .
. -.I
,/
///
/%.,7
US 8,199,269 B2
.. I . . . -
. . . .
. . . . ~ . .
/
C3
C2
FIG 15 ITO2 ITO1 C3
3
4022 D
C1
US. Patent
Jun. 12, 2012
Sheet 10 0f 10
FIG. 16A 19
US 8,199,269 B2
FIG. 16B 17
FORMING THE HEAT RESISTANT
>\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\‘
FILM TRANSI
FORMTN‘?
==#>ADHERING A PLASTIC
(UPSHJE
SUBSTRATE
STRUCT
FIG. 16E \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\Y
Will/Ill. mm“. .s
QFTHEGLASS SEPARATION ‘3;; :>
:2
(TRANS%MI)CE
I
g 8 ‘
