Graduate Category: Engineering and Technology Degree Level: PhD Abstract ID# 654
A High-Speed Low-Power Hybrid Analog-to-Digital Converter Architecture for Wireless Portable Medical Devices Seyed Alireza Zahrai, Faculty Advisor: Marvin Onabajo, Analog and Mixed-Signal Integrated Circuit Laboratory Comparator Asynchronous Binary Search (CABS) ADC
In recent years, telemedicine has become popular because it makes access to healthcare more convenient with lower cost, thereby saving lives through early diagnosis and real-time monitoring. The goal of this research is to design a high-speed analog-to-digital converter (ADC) for portable communication chips in telemedicine applications that require low power consumption to extend the lifetimes of batteries. The high-speed and low-power performance is achieved by devising a hybrid architecture that combines the advantages of two different types of ADCs.
The 5-bits CABS architecture [1] is capable of high conversion rates while consuming relatively low power thanks to its asynchronous operation. It consumes 400µW with a 250Mhz clock. VXP 7Vref/8 VXN Vref/8
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Introduction
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Simulation Results
Proposed Hybrid ADC Architecture The use of a Flash ADC is not power efficient with high resolution due to the large number of power-hungry comparators. Research Approach: Development of a Hybrid ADC architecture with one low-resolution Flash ADC accompanying by multiple time-interleaved successive approximation register (SAR) ADCs in the next stage → Combines the high-speed advantage of a low-resolution Flash ADC with the power efficiency of SAR ADCs. In the first stage, a flash ADC resolves the three most significant bits of the analog input signal, and the remaining five bits are determined by four time-interleaved low-power SAR ADCs in the second Clock Signals stage, leading to an overall VIP SHDAC 1 Buffer hybrid ADC having 8-bit VIN resolution operating with a 1GHz sampling clock. Buffer Flash ADC 3 bits
3 bits
Clk @ 1 GS/s
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Timing diagram of the hybrid ADC: 1ns
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Bit Allignment Unit (Sets of Latches)
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Phase 4 CABS_CLK_4 3 bits
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8 bit code
ADC_Output
Sample-and-Hold and Digital-to-Analog Converter (SHDAC) The SHDAC circuit samples the input voltage and also shifts it to the optimal voltage range of the second stage based on the flash ADC output bits. A unity-gain buffer is needed to suppress the loading effect of the SAR ADC’s input capacitance.
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ADC Performance Comparison Table Specification
This work
[2]
[3]
[4]
[5]
Sampling Rate (GS/s)
1
1.5
1
2
1
Number of Bits
8
7
10
6
6
SNDR @ NQ (dB)
47.5
38.2
51.4
33.1
33.4
ENOB @ NQ (dB)
7.60
6.05
8.25
5.21
5.25
CMOS Technology (nm)
130
90
65
45
65
Supply Voltage (V)
1.2
1.2
1
1.2
1
Power (mW)
17
204
18.9
14.4
62
FOM (fJ/conv. step)
87.6
2053
62.1
195
1629
Spectrum of the 8-bit 1GS/s hybrid ADC output: (a) fin = 6.84 MHz, (b) fin = 491.21 MHz.
Simulated DNL & INL of the hybrid ADC.
Conclusion The proposed 8-bit hybrid ADC architecture takes advantage of a 1GS/s 3-bit Flash ADC’s high-speed characteristics and the low-power nature of four 5-bit 250MS/s time-interleaved SAR ADCs, leading to 8-bit 1GS/s operation. A combined sample-and-hold and digital-to-analog converter (SHDAC) circuit was introduced for front-end sampling and shifting of the sampled voltage to the optimum operating region of the next stage, which alleviates voltage swing requirements and thereby reduces power consumption of amplifiers. The simulation results suggest that the ADC can achieve a SNDR above 47.4dB with an estimated power of 17mW in 130nm CMOS technology with 1.2V supply. In comparison to the state-of-the-art, the presented architecture consumes low power and has a competitive FOM, especially considering the lower transition frequency (fT) of the technology compared to the majority of works in Table.
References
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The hybrid ADC was simulated in 130nm CMOS technology with a mix of blocks implemented as transistor-level designs (a) (CABS ADC with encoder, buffer amplifiers) and macro-models (Switches, flash ADC, bit alignment unit). Total estimated power : approx. 17mW. Figure of merit (FOM) with an input close to the Nyquist rate: 87.6 fJ/step (b) FOM = power / (fS × 2ENOB)
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[1] G. Van der Plas and B. Verbruggen, “A 150 MS/s 133 µW 7 bit ADC in 90 nm Digital CMOS,” IEEE J. SolidState Circuits, vol. 43, no. 12, pp. 2631-2640, Dec. 2008. [2] J. Pernillo and M. P. Flynn, “A 1.5-GS/s Flash ADC With 57.7-dB SFDR and 6.4-Bit ENOB in 90 nm Digital CMOS,” IEEE Trans. Circuits and Systems II: Express Briefs, vol. 58, no. 12, pp. 837-841, Dec. 2011. [3] S. Lee, A. P. Chandrakasan, and H-S. Lee, “A 1 GS/s 10b 18.9 mW Time-Interleaved SAR ADC With Background Timing Skew Calibration,” IEEE J. Solid-State Circuits, vol. 49, no. 12, pp. 2846-2856, Dec. 2014. [4] B. Sung et. al., “A 6 bit 2 GS/s flash-assisted time-interleaved (FATI) SAR ADC with background offset calibration,” in Proc. IEEE Asian Solid-State Circuits Conf., pp. 281-284, Nov. 2013. [5] C.-J. Tseng, C. F. Lai, and H.-S. Chen, “A 6-Bit 1 GS/s Pipeline ADC Using Incomplete Settling With Background Sampling-Point Calibration,” IEEE Trans. Circuits And Systems I: Regular Papers, vol. 31, no. 10, pp. 2805-2815, Oct. 2014.