CuSCN-based inverted planar perovskite solar cell with an average ...
Supporting Information for:
CuSCN-based inverted planar perovskite solar cell with an average PCE of 15.6% Senyun Ye†, Weihai Sun†, Yunlong Li†, Weibo Yan†, Haitao Peng‡, Zuqiang Bian†*, Zhiwei Liu†* and Chunhui Huang† †
Beijng National Laboratory for Molecular Science, State Key Laboratory of Rare Earth
Materials and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People’s Republic of China ‡
Department of Energy and Resources Engineering, College of Engineering, Peking University,
Beijing 100871, People’s Republic of China E-mail: [email protected] (Z.B.); [email protected] (Z.L.)
This file includes: Supplementary Figure S1−S8
S1
Figure S1. XPS spectra at the Cu2p (a) and S2p (b) core levels of a CuSCN film electrodeposited on an ITO-coated glass.
S2
Figure S2. SEM images of CuSCN films with 7 s (a), 15 s (b), 50 s (c) and 100 s (d) electrodeposition time, respectively. The corresponding thicknesses of the CuSCN layers are 11 ±2 nm, 29±2 nm, 57±2 nm and 92±2 nm.
S3
Figure S3 a-d. Photovoltaic parameters (VOC, FF, JSC and PCE) for Device A plotted as functions of the CuSCN thickness. The measurements were the average of at least 5 cells.
S4
Figure S4 a-d. Photovoltaic parameters (VOC, FF, JSC and PCE) for Device A plotted as functions of the perovskite thickness. The measurements were the average of at least 5 cells.
S5
Figure S5. Planar AFM images of CH3NH3PbI3 (one-step) (a) and CH3NH3PbI3 (two-step) (b) deposited on CuSCN/ITO/glass substrates.
S6
Figure S6. From forward bias to short circuit (FB-SC) and from short circuit to forward bias (SC-FB)
current
density–voltage
characteristics
of
the
champions
of
Device
A
(ITO/CuSCN/CH3NH3PbI3 (one-step)/C60/BCP/Ag) and Device B (ITO/CuSCN/CH3NH3PbI3 (two-step)/C60/BCP/Ag) measured under AM 1.5G 100 mW cm-2 simulated sun light at a scan rate of 0.5 V s-1.
S7
Figure S7. SEM images of CH3NH3PbI3 (one-step) film (a) and CH3NH3PbI3 (two-step) film (b) deposited on the CuSCN/ITO/glass substrates, respectively.
S8
Figure S8. (a) Current density–voltage characteristics of Device A (ITO/CuSCN/CH3NH3PbI3 (one-step)/C60/BCP/Ag) measured under AM 1.5G 100 mW cm-2 simulated sun light at respective scan rates of 0.5 V s-1, 0.3 V s-1 and 0.1 V s-1. (b) The photocurrent density and PCE of the corresponding Device A held at a forward bias of 0.80 V as a function of time.
S9
CuSCN-based inverted planar perovskite solar cell with an average PCE of 15.6% Senyun Ye†, Weihai Sun†, Yunlong Li†, Weibo Yan†, Haitao Peng‡, Zuqiang Bian†*, Zhiwei Liu†* and Chunhui Huang† †
Beijng National Laboratory for Molecular Science, State Key Laboratory of Rare Earth
Materials and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People’s Republic of China ‡
Department of Energy and Resources Engineering, College of Engineering, Peking University,
Beijing 100871, People’s Republic of China E-mail: [email protected] (Z.B.); [email protected] (Z.L.)
This file includes: Supplementary Figure S1−S8
S1
Figure S1. XPS spectra at the Cu2p (a) and S2p (b) core levels of a CuSCN film electrodeposited on an ITO-coated glass.
S2
Figure S2. SEM images of CuSCN films with 7 s (a), 15 s (b), 50 s (c) and 100 s (d) electrodeposition time, respectively. The corresponding thicknesses of the CuSCN layers are 11 ±2 nm, 29±2 nm, 57±2 nm and 92±2 nm.
S3
Figure S3 a-d. Photovoltaic parameters (VOC, FF, JSC and PCE) for Device A plotted as functions of the CuSCN thickness. The measurements were the average of at least 5 cells.
S4
Figure S4 a-d. Photovoltaic parameters (VOC, FF, JSC and PCE) for Device A plotted as functions of the perovskite thickness. The measurements were the average of at least 5 cells.
S5
Figure S5. Planar AFM images of CH3NH3PbI3 (one-step) (a) and CH3NH3PbI3 (two-step) (b) deposited on CuSCN/ITO/glass substrates.
S6
Figure S6. From forward bias to short circuit (FB-SC) and from short circuit to forward bias (SC-FB)
current
density–voltage
characteristics
of
the
champions
of
Device
A
(ITO/CuSCN/CH3NH3PbI3 (one-step)/C60/BCP/Ag) and Device B (ITO/CuSCN/CH3NH3PbI3 (two-step)/C60/BCP/Ag) measured under AM 1.5G 100 mW cm-2 simulated sun light at a scan rate of 0.5 V s-1.
S7
Figure S7. SEM images of CH3NH3PbI3 (one-step) film (a) and CH3NH3PbI3 (two-step) film (b) deposited on the CuSCN/ITO/glass substrates, respectively.
S8
Figure S8. (a) Current density–voltage characteristics of Device A (ITO/CuSCN/CH3NH3PbI3 (one-step)/C60/BCP/Ag) measured under AM 1.5G 100 mW cm-2 simulated sun light at respective scan rates of 0.5 V s-1, 0.3 V s-1 and 0.1 V s-1. (b) The photocurrent density and PCE of the corresponding Device A held at a forward bias of 0.80 V as a function of time.
S9
