Electronic Supplementary Information What To Expect from ...
Electronic Supplementary Information
What To Expect from Conducting Polymers on the Playground of Thermoelectricity: Lessons Learned from Four High-Mobility Polymeric Semiconductors
Qian Zhang＃⊥, Yimeng Sun＃, Wei Xu＃※and Daoben Zhu＃※ ＃
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic
Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China. ⊥
University of Chinese Academy of Sciences, Beijing 100039, China.
*Corr esponding Author s E-mail: [email protected]; [email protected]
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Figure S1 Electrochemical cyclic voltammograms of (a) P3HT, (b) PBTTT, (c) PDPP3T and (d) PSBTBT. Molecular structures of the four polymers are included as insets. (e) UV-vis NIR absorption spectra of the four neural polymers with and without thermal annealing. (f) XRD patterns of the four neural polymers with and without thermal annealing. (g) AFM topography (upper) and phase (lower) graphs of the four polymers. From left to right are P3HT, PBTTT (annealed), PDPP3T, and PSBTBT (annealed) respectively. 2
Figure S2 Characteristics of bottom-gate transistors of spun-cast polymer films. (a), (b), (d), (f) as-cast P3HT, PBTTT, PDPP3T, PSBTBT films and (c), (e), (g) PBTTT, PDPP3T, PSBTBT films annealed at 220 ℃. Typical transfer curves of bottom-gate devices with channel length L=25 µm, channel width W=200 µm and a 300-nm-thick SiO 2 layer.
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Figure S3 Stability of doped polymer films. UV-vis NIR absorption spectra of polymer films in pristine, fully doped, and 7-month aged state: (a) P3HT, (b) PBTTT, (c) PDPP3T, (d) PSBTBT.
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Figure S4 (a) S 2p scan of XPS results of PBTTT (A), PDPP3T (B) and PSBTBT (C) films before (the lower curves) and after (the upper curves) doping. Evolution of S 2p with doping of PBTTT (b), PDPP3T (c) and PSBTBT (d).
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Figure S5 Temperature dependence of Seebeck coefficient of the four polymer films in lightly doped region: (a) P3HT, (b) PBTTT, (c) PDPP3T, (d) PSBTBT.
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Figure S6 Positive temperature dependence of Seebeck coefficient in highly doped polymer films: (a) P3HT, (b) PBTTT, (c) PDPP3T, (d) PSBTBT. Slopes of linear fitting are denoted beside the corresponding curve.
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Figure S7 Temperature dependence of electrical conductivity of the four polymer films at high doping levels. (a) Thermally activated conductivity observed in P3HT, PDPP3T and PSBTBT films at maximal doping levels achieved in this work. (b) Transition from thermally assisted conductivity to thermally prohibited conductivity with increasing doping levels observed in PBTTT films.
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What To Expect from Conducting Polymers on the Playground of Thermoelectricity: Lessons Learned from Four High-Mobility Polymeric Semiconductors
Qian Zhang＃⊥, Yimeng Sun＃, Wei Xu＃※and Daoben Zhu＃※ ＃
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic
Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China. ⊥
University of Chinese Academy of Sciences, Beijing 100039, China.
*Corr esponding Author s E-mail: [email protected]; [email protected]
1
Figure S1 Electrochemical cyclic voltammograms of (a) P3HT, (b) PBTTT, (c) PDPP3T and (d) PSBTBT. Molecular structures of the four polymers are included as insets. (e) UV-vis NIR absorption spectra of the four neural polymers with and without thermal annealing. (f) XRD patterns of the four neural polymers with and without thermal annealing. (g) AFM topography (upper) and phase (lower) graphs of the four polymers. From left to right are P3HT, PBTTT (annealed), PDPP3T, and PSBTBT (annealed) respectively. 2
Figure S2 Characteristics of bottom-gate transistors of spun-cast polymer films. (a), (b), (d), (f) as-cast P3HT, PBTTT, PDPP3T, PSBTBT films and (c), (e), (g) PBTTT, PDPP3T, PSBTBT films annealed at 220 ℃. Typical transfer curves of bottom-gate devices with channel length L=25 µm, channel width W=200 µm and a 300-nm-thick SiO 2 layer.
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Figure S3 Stability of doped polymer films. UV-vis NIR absorption spectra of polymer films in pristine, fully doped, and 7-month aged state: (a) P3HT, (b) PBTTT, (c) PDPP3T, (d) PSBTBT.
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Figure S4 (a) S 2p scan of XPS results of PBTTT (A), PDPP3T (B) and PSBTBT (C) films before (the lower curves) and after (the upper curves) doping. Evolution of S 2p with doping of PBTTT (b), PDPP3T (c) and PSBTBT (d).
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Figure S5 Temperature dependence of Seebeck coefficient of the four polymer films in lightly doped region: (a) P3HT, (b) PBTTT, (c) PDPP3T, (d) PSBTBT.
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Figure S6 Positive temperature dependence of Seebeck coefficient in highly doped polymer films: (a) P3HT, (b) PBTTT, (c) PDPP3T, (d) PSBTBT. Slopes of linear fitting are denoted beside the corresponding curve.
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Figure S7 Temperature dependence of electrical conductivity of the four polymer films at high doping levels. (a) Thermally activated conductivity observed in P3HT, PDPP3T and PSBTBT films at maximal doping levels achieved in this work. (b) Transition from thermally assisted conductivity to thermally prohibited conductivity with increasing doping levels observed in PBTTT films.
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