US006322903B1
(12) United States Patent
(10) Patent N0.: (45) Date of Patent:
Siniaguine et al.
(54)
PACKAGE OF INTEGRATED CIRCUITS AND VERTICAL INTEGRATION
(75) Inventors: Oleg Siniaguine; Sergey Savastiouk, both of San Jose, CA (US)
(73) Assignee: Tru-Si Technologies, Inc., Sunnyvale, CA (US) (*)
Notice:
Subject to any disclaimer, the term of this patent is extended or adjusted under 35
U.S.C. 154(b) by 0 days.
OTHER PUBLICATIONS
Comp, Pkg.& Mfg. Tech, Part A, vol. 19, No. 4, Dec. 1996,
Int. Cl.7 ................................................... .. H01L 21/44
(52)
US. Cl. ........................ .. 428/617; 438/108; 438/459;
438/977 Field of Search ................................... .. 438/616, 617,
438/118, 107, 112, 108, 113, 615, 119, 618, 315, 455—459, 598, 599 (56)
Anthony, T., “Forming Feedthroughs in Laser—Drilled Holes in Semiconductor Wafers by Double—Sided Sputtering”, IEEE Trans. On Comp, Hybrids,& Mfg. Tech, vol. CHMT—5, No. 1, Mar. 1982, pp. 171—180. Agrikov, U. et al “Dynamical Plasma Treatment of HIC
(Hybrid Integrated Circuits) Substrates”, Electronic Tech niques, Ser. 10, Microelectronic Devices 5(71), 1988, pp. 30—32, Russia.
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US 6,322,903 B1
.....
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suitable bumps. Dicing methods and vertical integration methods are also provided. Solder or electroplating are used in some embodiments.
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