Power Integrated Module (PIM) Features Equivalent Circuit Outline ...
Power Integrated Module (PIM) n Features • • • •
n Outline Drawing
Included Rectifier and Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( ~ 3 Times Rated Current )
n Equivalent Circuit
n Absolute Maximum Ratings ( Tc=25°C) Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) I 2t (Non Repetitive) Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Forward Current Surge Current Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque *1
Symbols VCES VGES IC IC PULSE -IC PULSE PC VRRM VRSM IO IFSM VCES VGES IC IC PULSE PC VRRM IF(AV) IFSM Tj TStg VISO
Test Conditions
Continuous 1ms 1ms 1 device
50Hz/60Hz sin. wave Tj=150°C, 10ms Tj=150°C, 10ms
Continuous 1ms 1 device
10ms
A.C. 1min.
Ratings 600 ± 20 50 100 50 200 800 900 50 350 648 600 ± 20 50 100 200 600 1 50 +150 -40 ∼ +125 2500 1.7
Units V A W V A A2s V A W V A °C V Nm
Note: *1:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
n Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Forward Voltage Reverse Current Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current Reverse Recovery Time
Symbols ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr VFM IRRM ICES IGES VCE(sat) ton tr toff tf IRRM trr
Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=50mA VGE=15V IC=50A f=1MHz, VGE=0V, VCE=10V VCC = 300V IC = 50A VGE = ±15V RG = 51Ω IF=50A VGE=0V IF=50A IF = 50A VR =800V VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=15V IC=50A VCC = 300V IC = 50A VGE = ±15V RG = 51Ω VR=600V
Min.
Max. 1.0 20 4.5 7.5 2.9 3300 (typ.)
Test Conditions Inverter IGBT Inverter FRD Brake IGBT Converter Diode With Thermal Compound
Min.
1.2 0.6 1.0 0.35 3.1 350 1.55 1.0 1.0 100 2.8 0.8 0.6 1.0 0.35 1.0 600
Units mA µA V pF
µs V ns V mA mA nA V µs mA ns
n Thermal Characteristics Items
Symbols
Thermal Resistance (1 device)
Rth(j-c)
Contact Thermal Resistance
Rth(c-f)
Max. 0.63 1.60 0.63 2.10 0.05 (typ.)
Units
°C/W
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T j=125°C
T j=25°C 125
125 V GE =20V,15V, 12V,
V GE =20V,15V,12V, 100
75
10V
50
Collector current : I
Collector current : I
C
C
[A]
[A]
100
25
75
10V
50
25 8V 8V
0
0 0
1
2
3
4
5
0
3
4
5
Collector-Emitter vs. Gate-Emitter voltage
Collector-Emitter vs. Gate-Emitter voltage
T j=25°C
T j=125°C
CE
[V]
10
[V]
8
Collector-Emitter voltage : V
CE
Collector-Emitter voltage : V
2
Collector-Emitter voltage : V CE [V]
10
6
4
IC= 100A 50A
2
25A 0
8
6
IC=
4
100A 50A 2
25A
0 0
5
10
15
20
25
0
Gate-Emitter voltage : V GE [V]
5
10
15
20
25
Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current
Switching time vs. Collector current
V CC =300V, R G =51 W , V GE =±15V, T j=25°C
V CC =300V, R G =51 Ω , V GE =±15V, Tj=125°C 1000
, t r , t off , t f [nsec]
t on t off
on
tr tf
tr tf
100
Switching time : t
Switching time : t
100
t off t on
, t r , t off , t f [nsec]
1000
on
1
Collector-Emitter voltage : V CE [V]
10
10 0
20
40
60
Collector current : I C [A]
80
0
20
40
60
Collector current : I C [A]
80
Switching time vs. R G
Dynamic input characteristics
[V] CE
tf 100
300V
400
300
15
200
10
100
5
0 0
10 100
50
Gate resistance : R G [ Ω ]
100
0
150
Gate charge : Q G [nC]
FRD Forward current vs. Forward voltage
Reverse recovery characteristics
V GE = O V
t rr , I rr vs. I F
70
[A]
40 30 20 10
t rr 125°C 100 t rr 25°C
:t Reverse recovery time
Reverse recovery current : I
50
rr
rr
[A] F
Forward current : I
[nsec]
T j=125°C 25°C 60
0
I rr 125°C I rr 25°C
10
1 0
1
2
3
4
0
10
20
30
40
50
Forward voltage : V F [V]
Forward current : I F [A]
Transient thermal resistance
+V GE =15V, -V GE 51 Ω
Collector current : I
100
G a t e c h a r g e : Q G [nC]
500
100 RBSOA (Repetitive pulse) 0
E on 1 2 5 C 2 E on 2 5 C
1 E rr1 2 5 C E rr 2 5 C
0 0
100
200
300
400
500
0
600
Collector-Emitter voltage : V C E [V]
Tj=25C
C oes ,C res [nF]
10
C ies
1 C oes C res 0,1
0
5
10
15
20
25
Collector-Emitter Voltage : V C E [V]
20
40
60
Collector-Emitter Current : I C [A]
Capacitance vs. Collector-Emitter Voltage
ies ,
50
Gate resistance : R G [ Ω ]
Reversed biased safe operating area
Capacitance : C
20
400V
[V]
1000
25
30
35
80
P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com
n Outline Drawing
Included Rectifier and Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( ~ 3 Times Rated Current )
n Equivalent Circuit
n Absolute Maximum Ratings ( Tc=25°C) Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) I 2t (Non Repetitive) Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Forward Current Surge Current Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque *1
Symbols VCES VGES IC IC PULSE -IC PULSE PC VRRM VRSM IO IFSM VCES VGES IC IC PULSE PC VRRM IF(AV) IFSM Tj TStg VISO
Test Conditions
Continuous 1ms 1ms 1 device
50Hz/60Hz sin. wave Tj=150°C, 10ms Tj=150°C, 10ms
Continuous 1ms 1 device
10ms
A.C. 1min.
Ratings 600 ± 20 50 100 50 200 800 900 50 350 648 600 ± 20 50 100 200 600 1 50 +150 -40 ∼ +125 2500 1.7
Units V A W V A A2s V A W V A °C V Nm
Note: *1:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
n Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Forward Voltage Reverse Current Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current Reverse Recovery Time
Symbols ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr VFM IRRM ICES IGES VCE(sat) ton tr toff tf IRRM trr
Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=50mA VGE=15V IC=50A f=1MHz, VGE=0V, VCE=10V VCC = 300V IC = 50A VGE = ±15V RG = 51Ω IF=50A VGE=0V IF=50A IF = 50A VR =800V VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=15V IC=50A VCC = 300V IC = 50A VGE = ±15V RG = 51Ω VR=600V
Min.
Max. 1.0 20 4.5 7.5 2.9 3300 (typ.)
Test Conditions Inverter IGBT Inverter FRD Brake IGBT Converter Diode With Thermal Compound
Min.
1.2 0.6 1.0 0.35 3.1 350 1.55 1.0 1.0 100 2.8 0.8 0.6 1.0 0.35 1.0 600
Units mA µA V pF
µs V ns V mA mA nA V µs mA ns
n Thermal Characteristics Items
Symbols
Thermal Resistance (1 device)
Rth(j-c)
Contact Thermal Resistance
Rth(c-f)
Max. 0.63 1.60 0.63 2.10 0.05 (typ.)
Units
°C/W
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T j=125°C
T j=25°C 125
125 V GE =20V,15V, 12V,
V GE =20V,15V,12V, 100
75
10V
50
Collector current : I
Collector current : I
C
C
[A]
[A]
100
25
75
10V
50
25 8V 8V
0
0 0
1
2
3
4
5
0
3
4
5
Collector-Emitter vs. Gate-Emitter voltage
Collector-Emitter vs. Gate-Emitter voltage
T j=25°C
T j=125°C
CE
[V]
10
[V]
8
Collector-Emitter voltage : V
CE
Collector-Emitter voltage : V
2
Collector-Emitter voltage : V CE [V]
10
6
4
IC= 100A 50A
2
25A 0
8
6
IC=
4
100A 50A 2
25A
0 0
5
10
15
20
25
0
Gate-Emitter voltage : V GE [V]
5
10
15
20
25
Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current
Switching time vs. Collector current
V CC =300V, R G =51 W , V GE =±15V, T j=25°C
V CC =300V, R G =51 Ω , V GE =±15V, Tj=125°C 1000
, t r , t off , t f [nsec]
t on t off
on
tr tf
tr tf
100
Switching time : t
Switching time : t
100
t off t on
, t r , t off , t f [nsec]
1000
on
1
Collector-Emitter voltage : V CE [V]
10
10 0
20
40
60
Collector current : I C [A]
80
0
20
40
60
Collector current : I C [A]
80
Switching time vs. R G
Dynamic input characteristics
[V] CE
tf 100
300V
400
300
15
200
10
100
5
0 0
10 100
50
Gate resistance : R G [ Ω ]
100
0
150
Gate charge : Q G [nC]
FRD Forward current vs. Forward voltage
Reverse recovery characteristics
V GE = O V
t rr , I rr vs. I F
70
[A]
40 30 20 10
t rr 125°C 100 t rr 25°C
:t Reverse recovery time
Reverse recovery current : I
50
rr
rr
[A] F
Forward current : I
[nsec]
T j=125°C 25°C 60
0
I rr 125°C I rr 25°C
10
1 0
1
2
3
4
0
10
20
30
40
50
Forward voltage : V F [V]
Forward current : I F [A]
Transient thermal resistance
+V GE =15V, -V GE 51 Ω
Collector current : I
100
G a t e c h a r g e : Q G [nC]
500
100 RBSOA (Repetitive pulse) 0
E on 1 2 5 C 2 E on 2 5 C
1 E rr1 2 5 C E rr 2 5 C
0 0
100
200
300
400
500
0
600
Collector-Emitter voltage : V C E [V]
Tj=25C
C oes ,C res [nF]
10
C ies
1 C oes C res 0,1
0
5
10
15
20
25
Collector-Emitter Voltage : V C E [V]
20
40
60
Collector-Emitter Current : I C [A]
Capacitance vs. Collector-Emitter Voltage
ies ,
50
Gate resistance : R G [ Ω ]
Reversed biased safe operating area
Capacitance : C
20
400V
[V]
1000
25
30
35
80
P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com
