Power MOSFET IRLZ34, SiHLZ34 - Octopart
IRLZ34, SiHLZ34 Vishay Siliconix
Power MOSFET FEATURES
PRODUCT SUMMARY VDS (V)
• Dynamic dV/dt Rating
60
RDS(on) (Ω)
VGS = 5.0 V
Qg (Max.) (nC)
35
Qgs (nC)
7.1
Qgd (nC)
25
Configuration
Available
• Logic-Level Gate Drive
0.050
• RDS(on) Specified at VGS = 4 V and 5 V
RoHS* COMPLIANT
• 175 °C Operating Temperature • Fast Switching • Ease of Paralleling
Single
• Simple Drive Requirements D
• Lead (Pb)-free Available
TO-220
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
G
S G
D
S N-Channel MOSFET
ORDERING INFORMATION Package
TO-220 IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34
Lead (Pb)-free SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 10
Continuous Drain Current Pulsed Drain
VGS at 5 V
TC = 25 °C TC = 100 °C
Currenta
ID IDM
Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
for 10 s 6-32 or M3 screw
UNIT V
30 21
A
110 0.59
W/°C
EAS
220
mJ
PD
88
W
dV/dt
4.5
V/ns
TJ, Tstg
- 55 to + 175 300d
°C
10
lbf · in
1.1
N·m
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 285 µH, RG = 25 Ω, IAS = 30 A (see fig. 12). c. ISD ≤ 30 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
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IRLZ34, SiHLZ34 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static Drain-Source Breakdown Voltage VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 µA
60
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.070
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
1.0
-
2.0
V
Gate-Source Leakage
IGSS
VGS = ± 10 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
RDS(on)
VGS = 5.0 V
ID = 18 Ab
-
-
0.050
VGS = 4.0 V
ID = 15 Ab
-
-
0.070
gfs
VDS = 25 V, ID = 18 Ab
12
-
-
Input Capacitance
Ciss
VGS = 0 V,
-
1600
-
Output Capacitance
Coss
VDS = 25 V,
-
660
-
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
-
170
-
Total Gate Charge
Qg
-
-
35
-
-
7.1
Forward Transconductance
µA Ω S
Dynamic
VGS = 5.0 V
ID = 30 A, VDS = 48 V
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
25
Turn-On Delay Time
td(on)
-
14
-
Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
tr td(off)
see fig. 6 and 13b
VDD = 30 V, ID = 30 A RG = 6.0 Ω, RD = 1.0 Ω, see fig.
10b
tf LD LS
Between lead, 6 mm (0.25") from package and center of die contact
D
-
170
-
-
30
-
-
56
-
-
4.5
-
-
7.5
-
-
-
30
-
-
110
-
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol showing the integral reverse p - n junction diode
D
A G
TJ = 25 °C, IS = 30 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/µsb
-
1.6
-
120
180
ns
-
0.70
1.3
µC
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
IRLZ34, SiHLZ34 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRLZ34, SiHLZ34 Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
IRLZ34, SiHLZ34 Vishay Siliconix RD
VDS VGS
D.U.T.
RG
+ - VDD 5V
Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 %
10 % VGS td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L Vary tp to obtain required IAS
VDS
VDS
tp VDD D.U.T.
RG
+ -
IAS
V DD
VDS
5V tp
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
IAS Fig. 12b - Unclamped Inductive Waveforms
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IRLZ34, SiHLZ34 Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. 50 kΩ
QG
5V
12 V
0.2 µF 0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS 3 mA
Charge IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
IRLZ34, SiHLZ34 Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit +
D.U.T.
Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer
+ -
-
RG
• • • •
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
Driver gate drive P.W.
+
Period
D=
+ -
VDD
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current
Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
Re-applied voltage
VDD
Body diode forward drop Inductor current Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91327.
Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
www.vishay.com 7
Legal Disclaimer Notice Vishay
Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1
Power MOSFET FEATURES
PRODUCT SUMMARY VDS (V)
• Dynamic dV/dt Rating
60
RDS(on) (Ω)
VGS = 5.0 V
Qg (Max.) (nC)
35
Qgs (nC)
7.1
Qgd (nC)
25
Configuration
Available
• Logic-Level Gate Drive
0.050
• RDS(on) Specified at VGS = 4 V and 5 V
RoHS* COMPLIANT
• 175 °C Operating Temperature • Fast Switching • Ease of Paralleling
Single
• Simple Drive Requirements D
• Lead (Pb)-free Available
TO-220
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
G
S G
D
S N-Channel MOSFET
ORDERING INFORMATION Package
TO-220 IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34
Lead (Pb)-free SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 10
Continuous Drain Current Pulsed Drain
VGS at 5 V
TC = 25 °C TC = 100 °C
Currenta
ID IDM
Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
for 10 s 6-32 or M3 screw
UNIT V
30 21
A
110 0.59
W/°C
EAS
220
mJ
PD
88
W
dV/dt
4.5
V/ns
TJ, Tstg
- 55 to + 175 300d
°C
10
lbf · in
1.1
N·m
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 285 µH, RG = 25 Ω, IAS = 30 A (see fig. 12). c. ISD ≤ 30 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
www.vishay.com 1
IRLZ34, SiHLZ34 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static Drain-Source Breakdown Voltage VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 µA
60
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.070
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
1.0
-
2.0
V
Gate-Source Leakage
IGSS
VGS = ± 10 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
RDS(on)
VGS = 5.0 V
ID = 18 Ab
-
-
0.050
VGS = 4.0 V
ID = 15 Ab
-
-
0.070
gfs
VDS = 25 V, ID = 18 Ab
12
-
-
Input Capacitance
Ciss
VGS = 0 V,
-
1600
-
Output Capacitance
Coss
VDS = 25 V,
-
660
-
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
-
170
-
Total Gate Charge
Qg
-
-
35
-
-
7.1
Forward Transconductance
µA Ω S
Dynamic
VGS = 5.0 V
ID = 30 A, VDS = 48 V
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
25
Turn-On Delay Time
td(on)
-
14
-
Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
tr td(off)
see fig. 6 and 13b
VDD = 30 V, ID = 30 A RG = 6.0 Ω, RD = 1.0 Ω, see fig.
10b
tf LD LS
Between lead, 6 mm (0.25") from package and center of die contact
D
-
170
-
-
30
-
-
56
-
-
4.5
-
-
7.5
-
-
-
30
-
-
110
-
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol showing the integral reverse p - n junction diode
D
A G
TJ = 25 °C, IS = 30 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/µsb
-
1.6
-
120
180
ns
-
0.70
1.3
µC
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com 2
Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
IRLZ34, SiHLZ34 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com 3
IRLZ34, SiHLZ34 Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
www.vishay.com 4
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
IRLZ34, SiHLZ34 Vishay Siliconix RD
VDS VGS
D.U.T.
RG
+ - VDD 5V
Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 %
10 % VGS td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L Vary tp to obtain required IAS
VDS
VDS
tp VDD D.U.T.
RG
+ -
IAS
V DD
VDS
5V tp
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
IAS Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com 5
IRLZ34, SiHLZ34 Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. 50 kΩ
QG
5V
12 V
0.2 µF 0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS 3 mA
Charge IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
www.vishay.com 6
Fig. 13b - Gate Charge Test Circuit
Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
IRLZ34, SiHLZ34 Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit +
D.U.T.
Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer
+ -
-
RG
• • • •
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
Driver gate drive P.W.
+
Period
D=
+ -
VDD
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current
Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
Re-applied voltage
VDD
Body diode forward drop Inductor current Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91327.
Document Number: 91327 S09-0036-Rev. A, 19-Jan-09
www.vishay.com 7
Legal Disclaimer Notice Vishay
Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1
