SKM200GAL126D - Semikron
SKM200GAL126D Absolute Maximum Ratings Symbol
Conditions
Values
Unit
IGBT VCES IC
Tj = 25 °C Tj = 150 °C
1200
V
Tc = 25 °C
260
A
Tc = 80 °C
186
A
150
A
ICnom ICRM
SEMITRANS® 3 Trench IGBT Modules SKM200GAL126D
VGES tpsc Tj
ICRM = 2xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V
300
A
-20 ... 20
V
10
µs
-40 ... 150
°C
Tc = 25 °C
200
A
Tc = 80 °C
140
A
150
A
Tj = 125 °C
Inverse diode IF
Tj = 150 °C
IFnom
Features • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC • UL recognized, file no. E63532
Typical Applications* • AC inverter drives • UPS • Electronic welders
IFRM
IFRM = 2xIFnom
300
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1422
A
-40 ... 150
°C
Tc = 25 °C
200
A
Tc = 80 °C
140
A
150
A
Tj Freewheeling diode IF
Tj = 150 °C
IFnom IFRM
IFRM = 2xIFnom
300
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1422
A
-40 ... 150
°C
Tj Module It(RMS) Tstg Visol
AC sinus 50 Hz, t = 1 min
500
A
-40 ... 125
°C
4000
V
Characteristics Symbol IGBT VCE(sat) VCE0
Conditions IC = 150 A VGE = 15 V chiplevel chiplevel
rCE
VGE = 15 V chiplevel
VGE(th)
VGE=VCE, IC = 6 mA
ICES
VGE = 0 V VCE = 1200 V
Cies Coes Cres
VCE = 25 V VGE = 0 V
QG
VGE = - 8 V...+ 20 V
RGint
Tj = 25 °C
min.
typ.
max.
Unit
Tj = 25 °C
1.71
2.10
V
Tj = 125 °C
2.00
2.45
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
4.7
6
mΩ
7.3
9
mΩ
5.8
6.5
V
2
mA
Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C
mA
f = 1 MHz
10.7
nF
f = 1 MHz
0.56
nF
f = 1 MHz
0.48
nF
1530
nC
5
Ω
GAL © by SEMIKRON
Rev. 1.0 – 20.07.2015
1
SKM200GAL126D Characteristics Symbol td(on) tr Eon td(off) tf
Conditions
VCC = 600 V IC = 150 A VGE = +15/-15 V RG on = 1.5 Ω RG off = 1.5 Ω
Eoff
SEMITRANS® 3 Trench IGBT Modules SKM200GAL126D
Rth(j-c)
Features • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC • UL recognized, file no. E63532
Typical Applications* • AC inverter drives • UPS • Electronic welders
IRRM Qrr Err Rth(j-c)
chiplevel
IRRM Qrr Err Rth(j-c)
chiplevel
max.
Unit
260
ns
Tj = 125 °C
40
ns
Tj = 125 °C
18
mJ
Tj = 125 °C
540
ns
Tj = 125 °C
110
ns
Tj = 125 °C
24
mJ 0.13
K/W
Tj = 25 °C
1.60
1.80
V
Tj = 125 °C
1.60
1.80
V
Tj = 25 °C
1
1.1
V
Tj = 125 °C
0.8
0.9
V
Tj = 25 °C
4
4.7
mΩ
5.3
6
mΩ
Tj = 125 °C IF = 150 A Tj = 125 °C di/dtoff = 5000 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode
Freewheeling diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF
typ.
per IGBT
Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF
min. Tj = 125 °C
240
A
42
µC
18
mJ 0.3
K/W
Tj = 25 °C
1.60
1.80
V
Tj = 125 °C
1.60
1.80
V
Tj = 25 °C
1
1.1
V
Tj = 125 °C
0.8
0.9
V
Tj = 25 °C
4
4.7
mΩ
Tj = 125 °C
5.3
6
mΩ
IF = 150 A Tj = 125 °C di/dtoff = 5000 A/µs T = 125 °C j VGE = ±15 V T j = 125 °C VCC = 600 V per Diode
240
A
42
µC
18
mJ
15
nH
TC = 25 °C
0.35
mΩ
TC = 125 °C
0.5
mΩ
0.3
K/W
Module LCE RCC'+EE'
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
0.02 to terminals M6
0.038
K/W
3
5
Nm
2.5
5
Nm Nm
w
325
g
GAL 2
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM200GAL126D
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 20.07.2015
3
SKM200GAL126D
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM200GAL126D
SEMITRANS 3
GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 20.07.2015
5
Conditions
Values
Unit
IGBT VCES IC
Tj = 25 °C Tj = 150 °C
1200
V
Tc = 25 °C
260
A
Tc = 80 °C
186
A
150
A
ICnom ICRM
SEMITRANS® 3 Trench IGBT Modules SKM200GAL126D
VGES tpsc Tj
ICRM = 2xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V
300
A
-20 ... 20
V
10
µs
-40 ... 150
°C
Tc = 25 °C
200
A
Tc = 80 °C
140
A
150
A
Tj = 125 °C
Inverse diode IF
Tj = 150 °C
IFnom
Features • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC • UL recognized, file no. E63532
Typical Applications* • AC inverter drives • UPS • Electronic welders
IFRM
IFRM = 2xIFnom
300
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1422
A
-40 ... 150
°C
Tc = 25 °C
200
A
Tc = 80 °C
140
A
150
A
Tj Freewheeling diode IF
Tj = 150 °C
IFnom IFRM
IFRM = 2xIFnom
300
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1422
A
-40 ... 150
°C
Tj Module It(RMS) Tstg Visol
AC sinus 50 Hz, t = 1 min
500
A
-40 ... 125
°C
4000
V
Characteristics Symbol IGBT VCE(sat) VCE0
Conditions IC = 150 A VGE = 15 V chiplevel chiplevel
rCE
VGE = 15 V chiplevel
VGE(th)
VGE=VCE, IC = 6 mA
ICES
VGE = 0 V VCE = 1200 V
Cies Coes Cres
VCE = 25 V VGE = 0 V
QG
VGE = - 8 V...+ 20 V
RGint
Tj = 25 °C
min.
typ.
max.
Unit
Tj = 25 °C
1.71
2.10
V
Tj = 125 °C
2.00
2.45
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
4.7
6
mΩ
7.3
9
mΩ
5.8
6.5
V
2
mA
Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C
mA
f = 1 MHz
10.7
nF
f = 1 MHz
0.56
nF
f = 1 MHz
0.48
nF
1530
nC
5
Ω
GAL © by SEMIKRON
Rev. 1.0 – 20.07.2015
1
SKM200GAL126D Characteristics Symbol td(on) tr Eon td(off) tf
Conditions
VCC = 600 V IC = 150 A VGE = +15/-15 V RG on = 1.5 Ω RG off = 1.5 Ω
Eoff
SEMITRANS® 3 Trench IGBT Modules SKM200GAL126D
Rth(j-c)
Features • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x IC • UL recognized, file no. E63532
Typical Applications* • AC inverter drives • UPS • Electronic welders
IRRM Qrr Err Rth(j-c)
chiplevel
IRRM Qrr Err Rth(j-c)
chiplevel
max.
Unit
260
ns
Tj = 125 °C
40
ns
Tj = 125 °C
18
mJ
Tj = 125 °C
540
ns
Tj = 125 °C
110
ns
Tj = 125 °C
24
mJ 0.13
K/W
Tj = 25 °C
1.60
1.80
V
Tj = 125 °C
1.60
1.80
V
Tj = 25 °C
1
1.1
V
Tj = 125 °C
0.8
0.9
V
Tj = 25 °C
4
4.7
mΩ
5.3
6
mΩ
Tj = 125 °C IF = 150 A Tj = 125 °C di/dtoff = 5000 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode
Freewheeling diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF
typ.
per IGBT
Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF
min. Tj = 125 °C
240
A
42
µC
18
mJ 0.3
K/W
Tj = 25 °C
1.60
1.80
V
Tj = 125 °C
1.60
1.80
V
Tj = 25 °C
1
1.1
V
Tj = 125 °C
0.8
0.9
V
Tj = 25 °C
4
4.7
mΩ
Tj = 125 °C
5.3
6
mΩ
IF = 150 A Tj = 125 °C di/dtoff = 5000 A/µs T = 125 °C j VGE = ±15 V T j = 125 °C VCC = 600 V per Diode
240
A
42
µC
18
mJ
15
nH
TC = 25 °C
0.35
mΩ
TC = 125 °C
0.5
mΩ
0.3
K/W
Module LCE RCC'+EE'
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
0.02 to terminals M6
0.038
K/W
3
5
Nm
2.5
5
Nm Nm
w
325
g
GAL 2
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM200GAL126D
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 20.07.2015
3
SKM200GAL126D
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM200GAL126D
SEMITRANS 3
GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 20.07.2015
5
