Highly uniform carbon nanotube field-effect transistors and medium ...
Supplementary Information for
Highly uniform carbon nanotube field-effect transistors and medium scale integrated circuits †
†
†
Bingyan Chen, Panpan Zhang, Li Ding, Jie Han, †
§
§
Song Qiu, Qingwen Li,
§
†
Zhiyong Zhang, * and Lian-Mao Peng * †Key Laboratory for the Physics and Chemistry of Nanodevices and Department of electronics, Peking University, Beijing 100871, China §Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park , Suzhou, Jiangsu Province 215123, China
(a)
(b)
Count
40 30 20 10 0 10
12
14
16
18
20
mobility (cm2/V·s)
22
24
Figure S1. (a) Optical image of the 120 FETs, the scale bar is 500μm. (b) Statistic distribution
0.0
-50
-0.2
-40
-0.4
-30
-0.6
-20
-0.8
-10
-1.0
0
AV
Vout(V)
histogram of mobility of 120 devices.
-1.0
-0.5
Vin(V)
0.0
Figure S2. Inverter works at VDD=1V.
(a)
(b) 7-stage 33.9kHz
11-stage 20.0kHz
680
Output(mv)
Output(mv)
600 580 560
660 640 620
540
600 520
0
50
100
150
200
250
0
Time(µs)
100
200
300
400
500
Time(µs)
(b)
(d) 21-stage 8.5kHz
600
Output(mv)
580 560
Stage number 7 11 21 Frequency/kHz 33.9 20 8.5 Propagation delay/µs 2.11 2.27 2.80
540 520 500 480 460 0
200
400
600
800
Time(µs) Figure S3. Output characteristics of ring oscillators with (a) 7-stage, (b) 11-stage, and (c) 21-stage at VDD=2V. (d) Table gives stage-delay times of three ring oscillators.
input(V)
A B
1
output(V)
0 Y
1
0 0
10
time(ms)
20
Figure S4. XNOR works at Vdd=1V.
H1
H2
H3
A
Y1
B
Y2
Figure S5. (a) Circuit design and (b) optical image of a two-bit shifter. The shifter will conduct left shift, pass through and right shift functions by setting (H1, H2, H3) to (1,0,0), (0,1,0) and (0, 0, 1) respectively. While for a 2-bit number, left shift and right shift is equal.
Highly uniform carbon nanotube field-effect transistors and medium scale integrated circuits †
†
†
Bingyan Chen, Panpan Zhang, Li Ding, Jie Han, †
§
§
Song Qiu, Qingwen Li,
§
†
Zhiyong Zhang, * and Lian-Mao Peng * †Key Laboratory for the Physics and Chemistry of Nanodevices and Department of electronics, Peking University, Beijing 100871, China §Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park , Suzhou, Jiangsu Province 215123, China
(a)
(b)
Count
40 30 20 10 0 10
12
14
16
18
20
mobility (cm2/V·s)
22
24
Figure S1. (a) Optical image of the 120 FETs, the scale bar is 500μm. (b) Statistic distribution
0.0
-50
-0.2
-40
-0.4
-30
-0.6
-20
-0.8
-10
-1.0
0
AV
Vout(V)
histogram of mobility of 120 devices.
-1.0
-0.5
Vin(V)
0.0
Figure S2. Inverter works at VDD=1V.
(a)
(b) 7-stage 33.9kHz
11-stage 20.0kHz
680
Output(mv)
Output(mv)
600 580 560
660 640 620
540
600 520
0
50
100
150
200
250
0
Time(µs)
100
200
300
400
500
Time(µs)
(b)
(d) 21-stage 8.5kHz
600
Output(mv)
580 560
Stage number 7 11 21 Frequency/kHz 33.9 20 8.5 Propagation delay/µs 2.11 2.27 2.80
540 520 500 480 460 0
200
400
600
800
Time(µs) Figure S3. Output characteristics of ring oscillators with (a) 7-stage, (b) 11-stage, and (c) 21-stage at VDD=2V. (d) Table gives stage-delay times of three ring oscillators.
input(V)
A B
1
output(V)
0 Y
1
0 0
10
time(ms)
20
Figure S4. XNOR works at Vdd=1V.
H1
H2
H3
A
Y1
B
Y2
Figure S5. (a) Circuit design and (b) optical image of a two-bit shifter. The shifter will conduct left shift, pass through and right shift functions by setting (H1, H2, H3) to (1,0,0), (0,1,0) and (0, 0, 1) respectively. While for a 2-bit number, left shift and right shift is equal.
