Package of integrated circuits and vertical integration

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US006322903B1

(12) United States Patent

(10) Patent N0.: (45) Date of Patent:

Siniaguine et al.

(54)

PACKAGE OF INTEGRATED CIRCUITS AND VERTICAL INTEGRATION

(75) Inventors: Oleg Siniaguine; Sergey Savastiouk, both of San Jose, CA (US)

(73) Assignee: Tru-Si Technologies, Inc., Sunnyvale, CA (US) (*)

Notice:

Subject to any disclaimer, the term of this patent is extended or adjusted under 35

U.S.C. 154(b) by 0 days.

OTHER PUBLICATIONS

Comp, Pkg.& Mfg. Tech, Part A, vol. 19, No. 4, Dec. 1996,

Int. Cl.7 ................................................... .. H01L 21/44

(52)

US. Cl. ........................ .. 428/617; 438/108; 438/459;

438/977 Field of Search ................................... .. 438/616, 617,

438/118, 107, 112, 108, 113, 615, 119, 618, 315, 455—459, 598, 599 (56)

Anthony, T., “Forming Feedthroughs in Laser—Drilled Holes in Semiconductor Wafers by Double—Sided Sputtering”, IEEE Trans. On Comp, Hybrids,& Mfg. Tech, vol. CHMT—5, No. 1, Mar. 1982, pp. 171—180. Agrikov, U. et al “Dynamical Plasma Treatment of HIC

(Hybrid Integrated Circuits) Substrates”, Electronic Tech niques, Ser. 10, Microelectronic Devices 5(71), 1988, pp. 30—32, Russia.

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US 6,322,903 B1

.....

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Primary Examiner—Charles BoWers Assistant Examiner—Yennhu B. Huynh

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ABSTRACT

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A ?rst level packaging Wafer is made of a semiconductor or

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insulating material. The bumps on the Wafer are made using vertical integration technology, Without solder or electro plating. More particularly, vias are etched part Way into a ?rst surface of the substrate. Metal is deposited into the vias. Then the substrate is blanket-etched from the back side until the metal is exposed and protrudes from the vias to form

. . . . ..

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suitable bumps. Dicing methods and vertical integration methods are also provided. Solder or electroplating are used in some embodiments.

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9/1998

Morrill

MacPherson, LLP; Michael Shenker

29 Claims, 13 Drawing Sheets

US 6,322,903 B1 Page 2

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U.S. Patent

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