Vertically integrated systems
USOO8957497B2
(12) United States Patent
(10) Patent N0.:
O’Donnell et al. (54)
(45) Date of Patent:
VERTICALLY INTEGRATED SYSTEMS _
(58)
_
Feb. 17, 2015
Field of Classi?cation Search USPC .......... .. 257/529, 532, 531, 536, 82, E29.326,
(71) Applicant: Analog DeVIces, Inc., Norwood, MA (Us) (72)
US 8,957,497 B2
Inventors: Alan J. O’Donnell, Castletroy (IE);
Santiago Iriarte, Dooradoyle (IE);
257/1329342, 1323149, 1333077, 1329325 See application ?le for complete search history. .
(56)
References Clted
G. Mark Lyden, J. Mlll‘plly, BaltImore KIlmore (IE); Gary Casey, COIIII Prospect (IE); Eoin Edward English,
4,671,352 A 6,075,239 A
Pallasgreen (IE)
6/1987 Pyke 6/2000 Aksyuk et al.
(73) Assignee: Analog Devices, Inc., Norwood, MA
(connnued)
(Us)
(*)
Notice:
FOREIGN PATENT DOCUMENTS
Subject to any disclaimer, the term of this
CN
1877989
patent 1s extended or adjusted under 35
EP
1 732 215
U.S.C. 154(b) by 0 days.
Filed:
OTHER PUBLICATIONS
Feb. 25, 2014
(65)
F. Roozeboom et al., “System-in-Package Integration of Passives using 3D Through-Silicon Vias”, Solid State Technology, May 2008,
Prior Publication Data
V01, 51, NO‘ 5, pp‘ 3847‘
US 2014/0175524 A1 Jun. 26, 2014 Related US. Application Data .
.
.
(Continued)
.
Primary Examiner * Mamadou Diallo
(63) Contmuation of applicatlon No. 14/041,804, ?led'on Sep. 30, 2013, Whlch 1s a contmuatIon of applicatlon No. 12/975,847, ?led on Dec. 22, 2010, now Pat. No.
8,569,861. (51)
(52)
(74) Attorney) Agent) or Firm i Knobbe’ Martens, Olson &
B
LLP
ear,
(57)
Illt- ClH01L 25/16 G01N 2 7/41 4
12/2006
(Continued)
(21) Appl- NO-I 14/189,788 (22)
12/2006
ABSTRACT
Embodiments of the P resent invention Provide an integrated circuit system including a ?rst active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a back side of the semiconductor die and having
(2006-01) (2006-01) (Continued)
U 5 Cl
electrical components embodied therein, Wherein the electri
CPC __________ n G01N27/4148 (201301); H01L 25/16
cal components include at least one discrete passive compo
(2013.01); H01L 23/481 (2013.01); B813 7/00
(2013.01); G01N27/26 (2013.01); H01L 25/167 (2013.01); H01L 27/14 (2013.01);
nent. The integrated circuit system also includes at least one
electrical path coupling the ?rst active layer and the second
pre-fabricated layer. 20 Claims, 41 Drawing Sheets
(Continued)
I
\
Measuring 1,
Layer
1;“
US 8,957,497 B2 Page 2 (51)
Int. Cl. H01L 23/48 B813 7/00
(2006.01) (2006.01)
G01N27/26
(2006.01)
H01L 27/14 H01L 27/15 H01L 49/02 H01L 31/0392 H02S 10/10 H01L 31/053 H01F 17/00 H01L 21/82 H01L 27/06 H01L 23/00 H011 23/367 H011 23/38 H011 23/4 73 (52) vs. C].
(2006.01) (2006.01) (2006.01) (2006.01) (2014.01) (2014.01) (2006.01) (2006.01) (2006.01) (2006.01) (2006.01) (2006.01) (2006.01)
CPC ............. .. H011 27/15 (2013.01); H01L 28/00
(2013.01); H01L 31/0392 (2013.01); H01L 31/0583 (2013.01); H01L 31/0586 (2013.01); H01F 17/00 (2013.01); H01L 28/10 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01); H01L 28/82 (2013.01); H01L 28/86 (2013.01); H01L 28/90 (2013.01); H01L 21/82 (2013.01); H01L 27/0694 (2013.01); H01L 24/48
(2013.01);H01L 2924/0970] (2013.01);H01L 2224/0557 (2013.01);H01L 2924/19104
2006/0261460 2007/0187826 2007/0210423 2007/0246806 2007/0246813 2007/0296065 2008/0054431 2008/0265421 2009/0008792 2009/0029492 2009/0039492 2009/0079065 2009/0170242 2009/0194829 2009/0261460 2009/0283871 2009/0302437 2009/0321930 2010/0032748 2010/0044704 2010/0052630 2010/0134139 2010/0171203 2010/0193905 2011/0023929 2011/0057273 2011/0199057 2013/0250532 2013/0273693 2013/0299924 2014/0014480 2014/0026649 2014/0034104 2014/0035630 2014/0162393
A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1
11/2006 Sato et a1. 8/2007 Shim et al. 9/2007 Hsu
10/2007 Ong et al. 10/2007 Ong et al. 12/2007 Yew et al.
3/2008 Wang et al. 10/2008 Brunnbauer et a1. 1/2009 Ko et al. 1/2009 Tu et al.
2/2009 Kang et a1. 3/2009 Furgut et a1. 7/2009 Lin et al.
8/2009 Chung et al. 10/2009 Kuan et al.
11/2009 Chang et al. 12/2009 12/2009 2/2010 2/2010 3/2010 6/2010 7/2010 8/2010 2/2011 3/2011 8/2011
Kim et a1. Marcoux Edwards Male et al. Chen Chen et al. Chen et al. Kim et a1. Edwards O’Donnell et al. Ivanov et a1.
9/2013 Bryzek et a1. 10/2013 11/2013 1/2014 1/2014 2/2014 2/2014
Haba et al. Weber et a1. Anderson et al. O’Donnell et al. O’Donnell et al. O’Donnell et al.
6/2014 Yang
(2013.01);H01L 23/3677(2013.01);H01L FOREIGN PATENT DOCUMENTS
23/38 (2013.01);H01L 23/473 (2013.01);H01L 2924/10253 (2013.01); YO2E 10/50 (2013.01); HOIL 2224/48265 (2013.01) USPC ......... .. 257/528; 257/252; 257/529; 257/724;
257/725
(56)
References Cited U.S. PATENT DOCUMENTS 6,765,287 6,800,930 6,803,559 6,879,429 7,130,177
B1 B2 B2 B2 B2
7/2004 10/2004 10/2004 4/2005 10/2006
Lin Jackson et al. Hsu etal. Wong et al. Aizawa et al.
7,208,832 B2
4/2007 Yamagata
7,550,834 B2
6/2009 Yu et a1.
7,648,911 B2
1/2010 Pagailaet al.
7,691,747 B2
4/2010 Lin et al.
7,723,831 B2 7,855,429 B2
5/2010 Kwang etal. 12/2010 Ishidaet al.
7,875,942 B2
1/2011 Cortese etal.
7,898,043 B2
3/2011 Ziglioliet a1.
8,101,898 8,274,147 8,280,207 8,339,798 8,350,382
B2 B2 B2 B2 B2
1/2012 9/2012 10/2012 12/2012 1/2013
Koste etal. Rofougaran et a1. Pinguet et al. Minoo et al. Furgut et al.
8,362,589 B2
1/2013 Quinn
8,368,654 B2 8,390,083 B2
2/2013 Rosenblatt et al. 3/2013 O’Donnell et al.
8,395,252 B1
3/2013 Yang
8,402,666 B1 8,436,690 B2
3/2013 Hsu et al. 5/2013 McCraith et al.
8,436,698 B2
5/2013 Rogers
8,569,861 B2
10/2013 O’Donnell et al.
8,577,063 B2 8,637,943 B1 8,754,643 B2
11/2013 Yang 1/2014 Yang 6/2014 Gugelet al.
8,847,340 B2 2005/0253244 A1 2006/0258053 A1
9/2014 Baldo et al.
JP JP JP JP JP JP JP JP JP KR KR KR KR WO
2004-349537 2005-353867 2006-245311 2006-344737 2007-103413 2008-017421 2009-200189 2010-087021 2010-251662 10-0537093 2006-0045375 2009-0117004 10-2010011269 2005/101476
12/2004 12/2005 9/2006 12/2006 4/2007 1/2008 9/2009 4/2010 11/2010 12/2005 5/2006 11/2009 10/2010 10/2005
OTHER PUBLICATIONS
M. Duplessis et al., “Physical Implementation of 3D Integrated Sole noids within Silicon Substrate for Hybrid IC Applications”, IEEE European Microwave Conference, Oct. 2009, pp. 1006-1009. H.B. Fan et al., “Prediction of Delamination in a Bi-material System
based on Free-Edge Energy Evaluation”, Proceedings of the 53rd
IEEE Electronic Components and Technology Conference, May 2003, pp. 1160-1164. K. Wang et al., “Interfacial Shear Stress, Peeling Stress and Die Cracking Stress in Trilyaer Electronic Assemblies”, IEEE 7th Intersociety Conference on Thermomechanical Phenomena in Elec
tronic Systems, May 2000, vol. 2, pp. 56-64. Y. Luo et al., “An Improved Estimate for Thermal Stresses in Multi Layer Assemblies”, IEEE 11th Intersociety Conference on Thermal
and Thermomechanical Phenomena in Electronic Systems, May 2008, pp. 842-852. T.D. Moore, “Peeling Stress Analyzed for Resistance to Delamina tioniApplication to Multiple Thin Films on a Thick Substrate”, IEEE 9th Intersociety Conference on Thermomechanical Phenom ena in Electronic Systems, Jun. 2004, vol. 2, pp. 330-335.
11/2005 Chang
University of Southern California, “Graphene Organic Photovolta
11/2006 Lee et a1.
ics: Flexible Material Only a Few Atoms Thick May Offer Cheap
US 8,957,497 B2 Page 3 (56)
References Cited OTHER PUBLICATIONS
Notice of Allowance of Dec. 26, 2013 for Korean Patent Application No. 10-2011-0139346 ?led Dec. 21, 2011. 2 pages, 1 page transla tion.
Japanese Of?ce Action of Feb. 26, 2013 for Japanese Patent Appli
Solar Power”, ScienceDaily, Jul. 24, 2010. (retrieved from http://
www.nanowerk.com/spotlight/spotid:1787 5 .php)
cation No. 2011279492: ?led Dec. 21, 2011. 3 pages, 3 page trans lation. Chinese Of?ce Action of Dec. 30, 2013 for Chinese Patent Applica tion No. 201110433902.0, ?led Dec. 22, 2011. 6 pages.
Massachusetts Institute of Technology, “Funneling Solar Energy:
Japanese Of?ce Action of Mar. 31, 2014 for Japanese Patent Appli
Antenna Made of Carbon Nanotubes Could Make Photovoltaic Cells
cation No. 2011-279492, ?led Dec. 21, 2011. 3 pages, 3 page trans lation. Taiwanese Of?ceAction of Jul. 11, 2014 for Taiwanese Patent Appli cation No. 100146568, ?led on Dec. 15, 2011. 4 pages, 3 page translation.
www.sciencedaily.com/releases/2010/ 07/ 100723095430.htm). M. Berger, “Polymer CarpetsiA New Class of Nanomaterials for NEMS and MEMS”, Nanowerk, Sep. 2, 2010. (retrieved from http://
More Ef?cient”, ScienceDaily, Sep. 13, 2010. (retrieved from http://
www.sciencedaily.com/releases/2010/09/100912151548.htm). E. Meng et al., “Polymer MEMS for Micro Fluid Delivery Systems”, American Chemical Society (ACS) Polymer MEMS Symposia, New
York, New York, USA, Sep. 2003. (two pages). Extended European Search Report dated Mar. 26, 2012, in European Application No. 111927893. Korean Of?ce Action of Jun. 17, 2013 for Korean Patent Application No. 10-2011-0139346 ?led Dec. 21, 2011. 6 pages, 6 page transla tion.
Hagleitner, et al., “Smart single-chip gas sensor microsystem”, Nature 414, Nov. 15,2001, 3 pages. Maseeh, et al., “A Novel Silicon Micro Amperometric Gas Sensor”, IEEE 1991, pp. 359-362. Chou, J ., Chapter 2: Electrochemical Sensors, Hazardous Gas Moni tors, 2000 McGraw-Hill, pp. 27-35.
US. Patent
Feb. 17, 2015
US 8,957,497 B2
Sheet 1 0f 41
Passive C0 en t
m1 0.\\\n1
D.%\
1
4\
O \\2 ,
//
BS1%M3ke 0
S em
w?mew
U Cto r
FIG. 1
“T1\)S5V0 Terminator 1 O
100
Passive
Component 240.1 Back /
Side
230
S em
m CtO r
.m0mew2
FIG. 2 2Oo
o0
wmxm o
HT
.m g
Terminator 2 0
US. Patent
Feb.17,2015
Sheet20f41
PassWe
Component 340.1
Wirebond
FK3.3 3 o
US 8,957,497 B2
US. Patent
Feb. 17, 2015
Sheet 3 0f 41
US 8,957,497 B2
US. Patent
Feb. 17, 2015
Sheet 4 0f 41
FIG. 4(a)
US 8,957,497 B2
US. Patent
Feb. 17, 2015
Sheet50f41
US 8,957,497 B2
Capacit'mrSide B in
{Emss Sect
V EW \\\\ \
\
\\\
Dieiectric \
XO Ca Qacitm Side A
Top V'SEW
FIG. 4(e)
US. Patent
Feb. 17, 2015
Sheet 6 0f 41
US 8,957,497 B2
Passive Component
/,
540.1
540.2
\ l\
Illl
Layer
(/
|lIIIIHII|ll|l|ll|l|ll|l|ll|l|l|||||l|llll|l|ll|l|ll|
\\
E |ll|
Cavity 560
K], ,r Back
—
\
/ /
TSV
@ Active J”
Protective
/
/J
Side
FIG. 5
?
@
Encapsulant
/,,,,,,//
m
Side
539
US. Patent
Feb. 17, 2015
Sheet 7 0f 41
FIG. 7(b) m
US 8,957,497 B2
US. Patent
Feb. 17, 2015
Sheet 8 0f 41
.
Pass've ‘
Passive
Passive
*
Component
Component w“
Component
US 8,957,497 B2
810.3
w
"
810.2 \\\
22
§§§§§§§§§§lila=
§§§§§Q§§O
i?ti?????tt
FIG. 8(a) M
Top Plate ,/’ 840.1 I
Capacitor
830.1
Bottom Plate
§§Q.1
FIG. 8(b) w ,/
Top Plate
§4Q.2
iCapacitor M Bottom Plate M
FIG. 8(6) 820.2
US. Patent
Feb. 17, 2015
Sheet 9 0f 41
Passive
Passive
Component
Component
9402
9403
\
TSV
950.3
/ do _-j:\~\\\ ,
\
Tsv
923/2
Passive
—' ‘
component
“\{SV
_
Third Recess
/
\\
,/~
US 8,957,497 B2
Q4Q.1
950.1
TS'V —95O-1
FIG. 9
M
Encapsulant 1010
1
FIG. 10
Recess
5O; //
Second
m 9503
First Recess
—
910.1
US. Patent
Feb. 17, 2015
Sheet 10 0f 41
US 8,957,497 B2
/5
Protective
FIG. 11 1100
Ingg?éor
' Passive Component
1;
—5'O—' "
"
High Voltage Die
Low Voltage Die
1220
1210
FIG. 12(a) 1200
//1240.1, 1240 .2
US. Patent
Feb. 17, 2015
US 8,957,497 B2
Sheet 11 0f 41
Ferromagnetic
//
Core
M
FIG. 12(b)
Ferromagnetic 1270.
Core 1260.2
'k\\\“\ \\\\\\\\\\\\\W\\\\\\ \\\\\
FIG. 12(6)
/
R:
FIG. 12(d)
Ferromagnetic
US. Patent
Feb. 17, 2015
Sheet 12 0f 41
US 8,957,497 B2
g Ferromagnetic LayerA 1280.1
- \Ferromagnetic k iCore
\_ “a
5320;? +
?I“ I?“
v
FIG. 12(e)
Iii“
*
@
LayerB M
US. Patent
Feb. 17, 2015
Sheet 13 0f 41
US 8,957,497 B2
Layer A 1280.2
Layer B 1290.2
\ \
\ \
\
\.
ng
FIG. 12(f)
\
\
US. Patent
Feb. 17, 2015
Sheet 14 0f 41
US 8,957,497 B2
High Voltage Die 1320 Inductor Coils
iPassive t omponen
1350.1 *
C
1350.2
Low
Voltage Die 1310
FIG. 13 1300
MEMS //
/Tm
High Voltage Die 1429 Inductor '
J41“
Coils 1450.1 14 .2
Low
Voltage Die 1410
FIG. 14 1400
14
1 \\
14
2
WTHTH
US. Patent
Feb. 17, 2015
Sheet 15 0f 41
US 8,957,497 B2
High
Phototransistor
V0|t1a5gsoDle
1550.1
—
k/
' '
\vg »
I
Passwe
gComponent "
i\
1540.1
5*
LED
1560.1
LOW
Voltage Die 1510
FIG. 15(a) 1500
High Photct ansistor 1550.1
LED 15602
Voltage Die 1520
Passive
ED 1 60.1
Ph to‘ lbiStOl' 155 2
LOW
Voltage Die 1510
FIG. 15(b) 1501
US. Patent
Feb. 17, 2015
Sheet 16 0f 41
Voltage Die
Voltage Die
15203
15103
US 8,957,497 B2
FIG. 1 5(6) 1503
Inductor 0mm 16301 16302
Inductor 6mm 16401 16402
Inductor can 16501 16502
II
II
I)
FIG. 16 1600
US. Patent
Feb. 17, 2015
Sheet 17 0f 41
US 8,957,497 B2
FIG. 17(a) 1700
FIG. 17(b) 1710
(12) United States Patent
(10) Patent N0.:
O’Donnell et al. (54)
(45) Date of Patent:
VERTICALLY INTEGRATED SYSTEMS _
(58)
_
Feb. 17, 2015
Field of Classi?cation Search USPC .......... .. 257/529, 532, 531, 536, 82, E29.326,
(71) Applicant: Analog DeVIces, Inc., Norwood, MA (Us) (72)
US 8,957,497 B2
Inventors: Alan J. O’Donnell, Castletroy (IE);
Santiago Iriarte, Dooradoyle (IE);
257/1329342, 1323149, 1333077, 1329325 See application ?le for complete search history. .
(56)
References Clted
G. Mark Lyden, J. Mlll‘plly, BaltImore KIlmore (IE); Gary Casey, COIIII Prospect (IE); Eoin Edward English,
4,671,352 A 6,075,239 A
Pallasgreen (IE)
6/1987 Pyke 6/2000 Aksyuk et al.
(73) Assignee: Analog Devices, Inc., Norwood, MA
(connnued)
(Us)
(*)
Notice:
FOREIGN PATENT DOCUMENTS
Subject to any disclaimer, the term of this
CN
1877989
patent 1s extended or adjusted under 35
EP
1 732 215
U.S.C. 154(b) by 0 days.
Filed:
OTHER PUBLICATIONS
Feb. 25, 2014
(65)
F. Roozeboom et al., “System-in-Package Integration of Passives using 3D Through-Silicon Vias”, Solid State Technology, May 2008,
Prior Publication Data
V01, 51, NO‘ 5, pp‘ 3847‘
US 2014/0175524 A1 Jun. 26, 2014 Related US. Application Data .
.
.
(Continued)
.
Primary Examiner * Mamadou Diallo
(63) Contmuation of applicatlon No. 14/041,804, ?led'on Sep. 30, 2013, Whlch 1s a contmuatIon of applicatlon No. 12/975,847, ?led on Dec. 22, 2010, now Pat. No.
8,569,861. (51)
(52)
(74) Attorney) Agent) or Firm i Knobbe’ Martens, Olson &
B
LLP
ear,
(57)
Illt- ClH01L 25/16 G01N 2 7/41 4
12/2006
(Continued)
(21) Appl- NO-I 14/189,788 (22)
12/2006
ABSTRACT
Embodiments of the P resent invention Provide an integrated circuit system including a ?rst active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a back side of the semiconductor die and having
(2006-01) (2006-01) (Continued)
U 5 Cl
electrical components embodied therein, Wherein the electri
CPC __________ n G01N27/4148 (201301); H01L 25/16
cal components include at least one discrete passive compo
(2013.01); H01L 23/481 (2013.01); B813 7/00
(2013.01); G01N27/26 (2013.01); H01L 25/167 (2013.01); H01L 27/14 (2013.01);
nent. The integrated circuit system also includes at least one
electrical path coupling the ?rst active layer and the second
pre-fabricated layer. 20 Claims, 41 Drawing Sheets
(Continued)
I
\
Measuring 1,
Layer
1;“
US 8,957,497 B2 Page 2 (51)
Int. Cl. H01L 23/48 B813 7/00
(2006.01) (2006.01)
G01N27/26
(2006.01)
H01L 27/14 H01L 27/15 H01L 49/02 H01L 31/0392 H02S 10/10 H01L 31/053 H01F 17/00 H01L 21/82 H01L 27/06 H01L 23/00 H011 23/367 H011 23/38 H011 23/4 73 (52) vs. C].
(2006.01) (2006.01) (2006.01) (2006.01) (2014.01) (2014.01) (2006.01) (2006.01) (2006.01) (2006.01) (2006.01) (2006.01) (2006.01)
CPC ............. .. H011 27/15 (2013.01); H01L 28/00
(2013.01); H01L 31/0392 (2013.01); H01L 31/0583 (2013.01); H01L 31/0586 (2013.01); H01F 17/00 (2013.01); H01L 28/10 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01); H01L 28/82 (2013.01); H01L 28/86 (2013.01); H01L 28/90 (2013.01); H01L 21/82 (2013.01); H01L 27/0694 (2013.01); H01L 24/48
(2013.01);H01L 2924/0970] (2013.01);H01L 2224/0557 (2013.01);H01L 2924/19104
2006/0261460 2007/0187826 2007/0210423 2007/0246806 2007/0246813 2007/0296065 2008/0054431 2008/0265421 2009/0008792 2009/0029492 2009/0039492 2009/0079065 2009/0170242 2009/0194829 2009/0261460 2009/0283871 2009/0302437 2009/0321930 2010/0032748 2010/0044704 2010/0052630 2010/0134139 2010/0171203 2010/0193905 2011/0023929 2011/0057273 2011/0199057 2013/0250532 2013/0273693 2013/0299924 2014/0014480 2014/0026649 2014/0034104 2014/0035630 2014/0162393
A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1
11/2006 Sato et a1. 8/2007 Shim et al. 9/2007 Hsu
10/2007 Ong et al. 10/2007 Ong et al. 12/2007 Yew et al.
3/2008 Wang et al. 10/2008 Brunnbauer et a1. 1/2009 Ko et al. 1/2009 Tu et al.
2/2009 Kang et a1. 3/2009 Furgut et a1. 7/2009 Lin et al.
8/2009 Chung et al. 10/2009 Kuan et al.
11/2009 Chang et al. 12/2009 12/2009 2/2010 2/2010 3/2010 6/2010 7/2010 8/2010 2/2011 3/2011 8/2011
Kim et a1. Marcoux Edwards Male et al. Chen Chen et al. Chen et al. Kim et a1. Edwards O’Donnell et al. Ivanov et a1.
9/2013 Bryzek et a1. 10/2013 11/2013 1/2014 1/2014 2/2014 2/2014
Haba et al. Weber et a1. Anderson et al. O’Donnell et al. O’Donnell et al. O’Donnell et al.
6/2014 Yang
(2013.01);H01L 23/3677(2013.01);H01L FOREIGN PATENT DOCUMENTS
23/38 (2013.01);H01L 23/473 (2013.01);H01L 2924/10253 (2013.01); YO2E 10/50 (2013.01); HOIL 2224/48265 (2013.01) USPC ......... .. 257/528; 257/252; 257/529; 257/724;
257/725
(56)
References Cited U.S. PATENT DOCUMENTS 6,765,287 6,800,930 6,803,559 6,879,429 7,130,177
B1 B2 B2 B2 B2
7/2004 10/2004 10/2004 4/2005 10/2006
Lin Jackson et al. Hsu etal. Wong et al. Aizawa et al.
7,208,832 B2
4/2007 Yamagata
7,550,834 B2
6/2009 Yu et a1.
7,648,911 B2
1/2010 Pagailaet al.
7,691,747 B2
4/2010 Lin et al.
7,723,831 B2 7,855,429 B2
5/2010 Kwang etal. 12/2010 Ishidaet al.
7,875,942 B2
1/2011 Cortese etal.
7,898,043 B2
3/2011 Ziglioliet a1.
8,101,898 8,274,147 8,280,207 8,339,798 8,350,382
B2 B2 B2 B2 B2
1/2012 9/2012 10/2012 12/2012 1/2013
Koste etal. Rofougaran et a1. Pinguet et al. Minoo et al. Furgut et al.
8,362,589 B2
1/2013 Quinn
8,368,654 B2 8,390,083 B2
2/2013 Rosenblatt et al. 3/2013 O’Donnell et al.
8,395,252 B1
3/2013 Yang
8,402,666 B1 8,436,690 B2
3/2013 Hsu et al. 5/2013 McCraith et al.
8,436,698 B2
5/2013 Rogers
8,569,861 B2
10/2013 O’Donnell et al.
8,577,063 B2 8,637,943 B1 8,754,643 B2
11/2013 Yang 1/2014 Yang 6/2014 Gugelet al.
8,847,340 B2 2005/0253244 A1 2006/0258053 A1
9/2014 Baldo et al.
JP JP JP JP JP JP JP JP JP KR KR KR KR WO
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