Datasheet BSZ013NE2LS5I - Infineon Technologies
MOSFET MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I
DataSheet Rev.2.0 Final
PowerManagement&Multimarket
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I 1Description
TSDSON-8FL
(enlarged source interconnection)
Features •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters Parameter
Value
Unit
VDS
25
V
RDS(on),max
1.3
mΩ
ID
40
A
QOSS
29
nC
QG(0V..4.5V)
17
nC
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ013NE2LS5I
PG-TSDSON-8 FL
13NE25I
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings Parameter
Symbol
Values
Unit
Note/TestCondition
40 40 40 40 32
A
VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W1)
-
160
A
TC=25°C
-
-
20
A
TC=25°C
EAS
-
-
90
mJ
ID=20A,RGS=25Ω
Gate source voltage
VGS
-16
-
16
V
-
Power dissipation
Ptot
-
-
69 2.1
W
TC=25°C TA=25°C,RthJA=60K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category; DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current
Pulsed drain current2) 3)
3Thermalcharacteristics Table3Thermalcharacteristics Parameter
Symbol
Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area1)
Values Min.
Typ.
Max.
RthJC
-
-
1.8
K/W
-
RthJA
-
-
60
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information
Final Data Sheet
4
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I 4Electricalcharacteristics Table4Staticcharacteristics Parameter
Symbol
Drain-source breakdown voltage
V(BR)DSS
Breakdown voltage temperature coefficient
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=10mA
15
-
mV/K ID=10mA,referencedto25°C
1.2
-
2.0
V
VDS=VGS,ID=250µA
IDSS
-
0.9
0.5 -
mA
VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.3 1.1
1.7 1.3
mΩ
VGS=4.5V,ID=20A VGS=10V,ID=20A
Gate resistance
RG
-
0.7
1.2
Ω
-
Transconductance
gfs
75
150
-
S
|VDS|>2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
25
-
dV(BR)DSS/dTj -
Gate threshold voltage
VGS(th)
Zero gate voltage drain current
Table5Dynamiccharacteristics Parameter
Symbol
Values Min.
Typ.
Max.
Ciss
-
2500
3400
pF
VGS=0V,VDS=12V,f=1MHz
Output capacitance
Coss
-
1200
1600
pF
VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance
Crss
-
92
-
pF
VGS=0V,VDS=12V,f=1MHz
Turn-on delay time
td(on)
-
5
-
ns
VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω
Rise time
tr
-
4
-
ns
VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω
Turn-off delay time
td(off)
-
26
-
ns
VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω
Fall time
tf
-
3
-
ns
VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω
Input capacitance1) 1)
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I Table6Gatechargecharacteristics1) Parameter
Symbol
Gate to source charge
Values
Unit
Note/TestCondition
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
4.0
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
-
3.6
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Qsw
-
5.5
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
17
23
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.3
-
V
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
37
50
nC
VDD=12V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
16
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
29
39
nC
VDD=12V,VGS=0V
Unit
Note/TestCondition
Min.
Typ.
Max.
Qgs
-
5.8
Gate charge at threshold
Qg(th)
-
Gate to drain charge
Qgd
Switching charge
2)
2)
Output charge
Table7Reversediode Parameter
Symbol
Diode continuous forward current
Values Min.
Typ.
Max.
IS
-
-
40
A
TC=25°C
Diode pulse current
IS,pulse
-
-
160
A
TC=25°C
Diode forward voltage
VSD
-
0.5
0.65
V
VGS=0V,IF=11A,Tj=25°C
Reverse recovery charge
Qrr
-
20
-
nC
VR=15V,IF=11A,diF/dt=400A/µs
1) 2)
See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test
Final Data Sheet
6
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I 5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
80
50
70 40 60
30
ID[A]
Ptot[W]
50 40
20
30 20
10 10 0
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs 102
100
10 µs 100 µs
0.2
ZthJC[K/W]
ID[A]
1 ms 10 ms
1
10
0.5
DC
0.1 10
0.05
-1
0.02 0.01 single pulse
0
10
10-1
10-1
10
100
101
102
-2
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I
Diagram5:Typ.outputcharacteristics 400
Diagram6:Typ.drain-sourceonresistance 2.0
3.5 V
3.2 V 5V 4.5 V 4V
3.5 V
3.2 V
300 10 V
RDS(on)[mΩ]
1.5
ID[A]
3V 200
2.8 V 100
0
4V 4.5 V 5V 7V
8V
10 V
1.0
0.5
0
1
2
0.0
3
0
10
20
VDS[V]
30
40
50
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
300
400
250
320
200
gfs[S]
ID[A]
240 150
160 100 150 °C
25 °C
2
3
80
50
0
0
1
4
5
0
0
VGS[V]
80
120
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
8
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
3.0
2.5
2.5
2.0 10 mA 1.5
VGS(th)[V]
RDS(on)[mΩ]
2.0
1.5
1.0
typ
1.0
0.5
0.5
0.0 -60
-20
20
60
100
140
0.0 -60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=20A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=10mA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
-55 °C 25 °C 125 °C 150 °C
Ciss 102
Coss
IF[A]
C[pF]
103
101
Crss
102
100
101
0
5
10
15
20
25
10-1
0.0
VDS[V]
0.8
1.2
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.4
IF=f(VSD);parameter:Tj
9
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
12
12 V
10
5V 20 V
8
VGS[V]
IAV[A]
25 °C 100 °C
101
125 °C
6
4
2
100
100
101
102
103
0
0
tAV[µs]
10
20
30
40
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Typ.drain-sourceleakagecurrent
Gate charge waveforms
10-3 125 °C
100 °C -4
10
IDSS[A]
75 °C
10-5
25 °C
10-6
0
5
10
15
20
Vsd[V] IDSS=f(VDS);VGS=0V;parameter:Tj
Final Data Sheet
10
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I 6PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet
11
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I RevisionHistory BSZ013NE2LS5I Revision:2015-08-17,Rev.2.0 Previous Revision Revision
Date
Subjects (major changes since last revision)
2.0
2015-08-17
Release of final version
WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
12
Rev.2.0,2015-08-17
OptiMOSTM OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I
DataSheet Rev.2.0 Final
PowerManagement&Multimarket
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I 1Description
TSDSON-8FL
(enlarged source interconnection)
Features •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters Parameter
Value
Unit
VDS
25
V
RDS(on),max
1.3
mΩ
ID
40
A
QOSS
29
nC
QG(0V..4.5V)
17
nC
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ013NE2LS5I
PG-TSDSON-8 FL
13NE25I
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings Parameter
Symbol
Values
Unit
Note/TestCondition
40 40 40 40 32
A
VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W1)
-
160
A
TC=25°C
-
-
20
A
TC=25°C
EAS
-
-
90
mJ
ID=20A,RGS=25Ω
Gate source voltage
VGS
-16
-
16
V
-
Power dissipation
Ptot
-
-
69 2.1
W
TC=25°C TA=25°C,RthJA=60K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category; DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current
Pulsed drain current2) 3)
3Thermalcharacteristics Table3Thermalcharacteristics Parameter
Symbol
Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area1)
Values Min.
Typ.
Max.
RthJC
-
-
1.8
K/W
-
RthJA
-
-
60
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information
Final Data Sheet
4
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I 4Electricalcharacteristics Table4Staticcharacteristics Parameter
Symbol
Drain-source breakdown voltage
V(BR)DSS
Breakdown voltage temperature coefficient
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=10mA
15
-
mV/K ID=10mA,referencedto25°C
1.2
-
2.0
V
VDS=VGS,ID=250µA
IDSS
-
0.9
0.5 -
mA
VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.3 1.1
1.7 1.3
mΩ
VGS=4.5V,ID=20A VGS=10V,ID=20A
Gate resistance
RG
-
0.7
1.2
Ω
-
Transconductance
gfs
75
150
-
S
|VDS|>2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
25
-
dV(BR)DSS/dTj -
Gate threshold voltage
VGS(th)
Zero gate voltage drain current
Table5Dynamiccharacteristics Parameter
Symbol
Values Min.
Typ.
Max.
Ciss
-
2500
3400
pF
VGS=0V,VDS=12V,f=1MHz
Output capacitance
Coss
-
1200
1600
pF
VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance
Crss
-
92
-
pF
VGS=0V,VDS=12V,f=1MHz
Turn-on delay time
td(on)
-
5
-
ns
VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω
Rise time
tr
-
4
-
ns
VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω
Turn-off delay time
td(off)
-
26
-
ns
VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω
Fall time
tf
-
3
-
ns
VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω
Input capacitance1) 1)
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I Table6Gatechargecharacteristics1) Parameter
Symbol
Gate to source charge
Values
Unit
Note/TestCondition
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
4.0
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
-
3.6
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Qsw
-
5.5
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
17
23
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.3
-
V
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
37
50
nC
VDD=12V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
16
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
29
39
nC
VDD=12V,VGS=0V
Unit
Note/TestCondition
Min.
Typ.
Max.
Qgs
-
5.8
Gate charge at threshold
Qg(th)
-
Gate to drain charge
Qgd
Switching charge
2)
2)
Output charge
Table7Reversediode Parameter
Symbol
Diode continuous forward current
Values Min.
Typ.
Max.
IS
-
-
40
A
TC=25°C
Diode pulse current
IS,pulse
-
-
160
A
TC=25°C
Diode forward voltage
VSD
-
0.5
0.65
V
VGS=0V,IF=11A,Tj=25°C
Reverse recovery charge
Qrr
-
20
-
nC
VR=15V,IF=11A,diF/dt=400A/µs
1) 2)
See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test
Final Data Sheet
6
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I 5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
80
50
70 40 60
30
ID[A]
Ptot[W]
50 40
20
30 20
10 10 0
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs 102
100
10 µs 100 µs
0.2
ZthJC[K/W]
ID[A]
1 ms 10 ms
1
10
0.5
DC
0.1 10
0.05
-1
0.02 0.01 single pulse
0
10
10-1
10-1
10
100
101
102
-2
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I
Diagram5:Typ.outputcharacteristics 400
Diagram6:Typ.drain-sourceonresistance 2.0
3.5 V
3.2 V 5V 4.5 V 4V
3.5 V
3.2 V
300 10 V
RDS(on)[mΩ]
1.5
ID[A]
3V 200
2.8 V 100
0
4V 4.5 V 5V 7V
8V
10 V
1.0
0.5
0
1
2
0.0
3
0
10
20
VDS[V]
30
40
50
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
300
400
250
320
200
gfs[S]
ID[A]
240 150
160 100 150 °C
25 °C
2
3
80
50
0
0
1
4
5
0
0
VGS[V]
80
120
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
8
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
3.0
2.5
2.5
2.0 10 mA 1.5
VGS(th)[V]
RDS(on)[mΩ]
2.0
1.5
1.0
typ
1.0
0.5
0.5
0.0 -60
-20
20
60
100
140
0.0 -60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=20A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=10mA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
-55 °C 25 °C 125 °C 150 °C
Ciss 102
Coss
IF[A]
C[pF]
103
101
Crss
102
100
101
0
5
10
15
20
25
10-1
0.0
VDS[V]
0.8
1.2
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.4
IF=f(VSD);parameter:Tj
9
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
12
12 V
10
5V 20 V
8
VGS[V]
IAV[A]
25 °C 100 °C
101
125 °C
6
4
2
100
100
101
102
103
0
0
tAV[µs]
10
20
30
40
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Typ.drain-sourceleakagecurrent
Gate charge waveforms
10-3 125 °C
100 °C -4
10
IDSS[A]
75 °C
10-5
25 °C
10-6
0
5
10
15
20
Vsd[V] IDSS=f(VDS);VGS=0V;parameter:Tj
Final Data Sheet
10
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I 6PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet
11
Rev.2.0,2015-08-17
OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I RevisionHistory BSZ013NE2LS5I Revision:2015-08-17,Rev.2.0 Previous Revision Revision
Date
Subjects (major changes since last revision)
2.0
2015-08-17
Release of final version
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Final Data Sheet
12
Rev.2.0,2015-08-17
