Rad-hard precision bipolar single operational amplifier

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RHF43B Rad-hard precision bipolar single operational amplifier Features ■

High radiation immunity: 300 kRad TID at high/low dose rate (ELDRS-free), tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply



Rail-to-rail output



8 MHz gain bandwidth at 16 V



Low input offset voltage: 100 µV typ

Ceramic Flat-8

1

8

NC IN -

NC +VCC VCC

IN +

OUT NC

-VCC VDD



Supply current: 2.2 mA typ



Operating from 3 to 16 V



Input bias current: 30 nA typ



ESD internal protection ≥ 2 kV



Latch-up immunity: 200 mA



QML-V RHA, ELDRS-free qualified under smd 5962-06237

4

5

Applications ■

Space probes and satellites



Defense systems



Scientific instrumentation



Nuclear systems

Description The RHF43B is a precision bipolar operational amplifier available in a ceramic 8-pin flat package and in die form. ln addition to its low offset voltage, rail-to-rail feature and wide supply voltage, the RHF43B is designed for increased tolerance to radiation. Its intrinsic ELDRS-free rad-hard design allows this product to be used in space applications and in applications operating in harsh environments.

August 2010

Doc ID 13477 Rev 7

1/16 www.st.com

16

Absolute maximum ratings and operating conditions

1

RHF43B

Absolute maximum ratings and operating conditions Table 1.

Absolute maximum ratings (AMR)

Symbol

Parameter

VCC

Supply voltage(1)

Vid

Differential input voltage (2) (3)

Vin

Input voltage range

IIN

Input current

Tstg

Unit

18 ±9

V

±1.2

V

VDD-0.3 to 16

V

45

mA

-65 to +150

°C

Thermal resistance junction to

ambient(4)(5)

125

°C/W

Rthjc

Thermal resistance junction to

case(4)(5)

40

°C/W

Tj

Maximum junction temperature

150

°C

2

kV

Latch-up immunity

200

mA

Lead temperature (soldering, 10 sec)

260

°C

Low dose rate of 0.01 rad.sec-1 (up to Vcc = 16 V)

300

kRad

High dose rate of 50-300 rad.sec-1 (up to Vcc = 16 V)

300

kRad

Heavy ion latch-up (SEL) immune with heavy ions (up to Vcc = 14 V)

120

MeV.cm2/mg

Rthja

ESD

Storage temperature

Value

HBM: human body

model(6)

Radiation related parameters

Dose

HI

1. All values, except differential voltage are with respect to network terminal. 2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of input and output terminal must never exceed VCC + 0.3 V. 4. Short-circuits can cause excessive heating and destructive dissipation. 5. Rth are typical values. 6. Human body model: 100 pF discharged through a 1.5 kΩ resistor between two pins of the device, done for all couples of pin combinations with other pins floating.

Table 2.

Operating conditions

Symbol

2/16

Parameter

Value

Unit

3 to 16

V

VCC

Supply voltage

Vicm

Common mode input voltage range

VDD to VCC

V

Toper

Operating free air temperature range

-55 to +125

°C

Doc ID 13477 Rev 7

RHF43B

Electrical characteristics

2

Electrical characteristics

Table 3.

16 V supply: VCC = +16 V, VDD = 0 V, load to VCC/2 (unless otherwise specified)

Symbol

Parameter

Test conditions

Ambient temp.

Min.

Typ.

Max.

Unit

DC performance +125°C ICC

Supply current

No load

2.9

+25°C

2.5

-55°C

Vio

DVio

Iib

DIib

Iio

Offset voltage

Vicm = VCC/2

Input offset voltage drift

Input bias current

Input offset current temperature drift

Input offset current

Vicm = VCC/2

Vicm = VCC/2

Differential input resistance between in+ and inRin

Cin

CMR

SVR

A VD

mA

2.9

+125°C

-500

+25°C

-300

-55°C

-500

-

Vicm = VCC/2

2.9

500 100

300 500

μV/°C

1

+125°C

-100

+25°C

-60

-55°C

-100

-

100 30

60

-35

+25°C

-15

-55°C

-35

+25°C

nA

100 100

+125°C

µV

pA/°C 35

1

15

nA

35 0.16 MΩ

Input resistance between in+ (or in-) and GND

+25°C

2000

Differential input capacitance between in+ and in-

+25°C

8

Input capacitance between in+ (or in-) and GND

+25°C

2

pF

Common mode rejection ratio

Supply rejection ratio

Large signal voltage gain

0 < Vicm < 16 V

3 V < VCC