SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS

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TVS Diode Arrays (SPA®® Diodes) Low Capacitance ESD Protection - SP3022 Series

SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS

RoHS Pb GREEN

Description The SP3022 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in the IEC61000-4-2 international standard (±20kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present and the low loading capacitance makes it ideal for protecting high speed data lines such as HDMI,USB2.0, USB3.0 and eSATA. Pinout Features

0201 Flipchip

1

2

SOD882

1

2

t4QBDFFGmDJFOUBOE 0402 footprint

t&'5 *&$ " (5/50ns)

t&YUSFNFMZMPXEZOBNJD resistance (0.7Ω TYP)

t-JHIUOJOHQSPUFDUJPO  IEC61000-4-5, 3A (tp=8/20μs)

t"&$2RVBMJmFE (SOD882 package)

t-PXMFBLBHFDVSSFOUPG 100nA at 5.3V (MAX)

t-PXDBQBDJUBODFPG Q'!7R=0V (TYP)

"&$2RVBMJmFE

Functional Block Diagram

1

t&4%QSPUFDUJPOPGœL7 contact discharge, ±30kV air discharge, (IEC61000-4-2)

Applications

2

t64#64#.)-

t4NBSU1IPOFT

t.*1*$BNFSBBOE%JTQMBZ

t&YUFSOBM4UPSBHF

t)%.* %JTQMBZ1PSU 1.3, eSATA

t6MUSBCPPLT /PUFCPPLT

t4FU5PQ#PYFT (BNF Consoles

t)JHI4QFFE4FSJBM Interfaces

t5BCMFUT F3FBEFST

-JGF4VQQPSU/PUF Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated.

©2014 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 10/14/14

SP3022 Series 1 506

TVS Diode Arrays (SPA®® Diodes) Low Capacitance ESD Protection - SP3022 Series

Thermal Information

Absolute Maximum Ratings Symbol

Parameter

PPK

Value

Peak Pulse Power (tP=8/20μs)

IPP

Peak Current (tp=8/20μs)

TOP

Operating Temperature

Parameter

Rating

Units

-55 to 150

°C

Maximum Junction Temperature

150

°C

.BYJNVN-FBE5FNQFSBUVSF (Soldering 20-40s)

260

°C

Units

20

Storage Temperature Range

W

3.0

A

-40 to 125

°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Characteristics (TOP=25ºC) Parameter

Symbol

Reverse Standoff Voltage

Test Conditions

Min

VRWM 1R=1mA

6.8

Reverse Breakdown Voltage

VBR

3FWFSTF-FBLBHF$VSSFOU

I-&",

VR=5.3V

VC

IPP=1A, tp˜T 'XE

Dynamic Resistance2

R%:/

5-1 UQOT *0UP(/%

ESD Withstand Voltage1

VESD

Clamp Voltage1

Diode Capacitance

Typ

1

7.8